SCHEMBL775546

SCHEMBL775546

C=CC(=O)OCC(C)(C)NS(=O)(=O)C(F)(F)F

nearest known ligand 0.43

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.43
TP53 P04637 3/20 0.43
HIF1A Q16665 3/20 0.43
CYP3A4 P08684 2/20 0.43
MAPK1 P28482 1/20 0.43
SMN1; SMN2 Q16637 1/20 0.43
THRB P10828 1/20 0.37
TSHR P16473 7/20 0.37
HPGD P15428 1/20 0.36
HSD17B10 Q99714 1/20 0.35
CA1 P00915 1/20 0.31
CA2 P00918 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10151019 0.91 ALDH1A1 (0.41) ALDH1A1TP53HIF1ACYP3A4MAPK1
SCHEMBL16866879 0.84 TSHR (0.45) ALDH1A1TP53HIF1ACYP3A4MAPK1
SCHEMBL18455477 0.78 CA1 (0.34) MAPK1SMN1; SMN2CA1CA2
SCHEMBL20100382 0.78 ALDH1A1 (0.38) ALDH1A1TP53HIF1ACYP3A4MAPK1
SCHEMBL20100448 0.77 CA1 (0.31) CA1CA2
SCHEMBL775729 0.77 TSHR (0.37) ALDH1A1MAPK1SMN1; SMN2THRBTSHR
SCHEMBL21234279 0.77 THRB (0.41) ALDH1A1TP53HIF1ACYP3A4MAPK1
SCHEMBL21129428 0.77 HTT (0.33) ALDH1A1CA1CA2
SCHEMBL12394812 0.75 ALDH1A1 (0.55) ALDH1A1TP53HIF1ACYP3A4MAPK1
SCHEMBL12317976 0.75 ALDH1A1 (0.39) ALDH1A1TP53HIF1ACYP3A4MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 57 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116987225-B Photoresist polymer for 193nm, preparation method thereof and photoresist composition 甘肃华隆芯材料科技有限公司 2023-12-22 CN claimed
CN-116987225-A Photoresist polymer for 193nm, preparation method thereof and photoresist composition 甘肃华隆芯材料科技有限公司 2023-11-03 CN claimed
US-20240019779-A1 COMPOUNDS AND PHOTORESIST COMPOSITIONS INCLUDING THE SAME U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-01-18 US disclosed
US-20240019779-A1 COMPOUNDS AND PHOTORESIST COMPOSITIONS INCLUDING THE SAME U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2024-01-18 US disclosed
CN-116987225-B Photoresist polymer for 193nm, preparation method thereof and photoresist composition 甘肃华隆芯材料科技有限公司 2023-12-22 CN disclosed
CN-116987225-A Photoresist polymer for 193nm, preparation method thereof and photoresist composition 甘肃华隆芯材料科技有限公司 2023-11-03 CN disclosed
US-20230314934-A1 PHOTOACTIVE COMPOUNDS, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-10-05 US disclosed
US-20230251575-A1 PHOTORESIST TOPCOAT COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-08-10 US disclosed
US-20230251575-A1 PHOTORESIST TOPCOAT COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-08-10 US disclosed
US-20230213862-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-07-06 US disclosed
US-20230161257-A1 PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT 2023-05-25 US disclosed
US-20120052443-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-03-01 US disclosed
US-20120052443-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-03-01 US disclosed
US-20120052440-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-03-01 US disclosed
US-20120034563-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-02-09 US disclosed
US-20120034563-A1 RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-02-09 US disclosed
US-20120028188-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-02-02 US disclosed
US-20120028188-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-02-02 US disclosed
US-20110111342-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY LIMITED (JP) 2011-05-12 US disclosed
US-20110111342-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY LIMITED (JP) 2011-05-12 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120052440-A1 SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME C1S, C1R, CLIC1 ALDH1A1 3659/4885TP53 2737/4885HIF1A 3563/4885
US-20240019779-A1 COMPOUNDS AND PHOTORESIST COMPOSITIONS INCLUDING THE SAME CRY1, CCNT1, CCNA1 ALDH1A1 382/4885TP53 2287/4885HIF1A 159/4885
US-20230314934-A1 PHOTOACTIVE COMPOUNDS, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS CRY1, CBR3, C1S ALDH1A1 810/4885TP53 1933/4885HIF1A 409/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.