Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MEN1 | O00255 | 1/20 | 0.30 |
| ▸ | POLB | P06746 | 1/20 | 0.30 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL251108 | 0.75 | TRPA1 (0.30) | MEN1POLBKMT2A | |
| SCHEMBL10937384 | 0.75 | MEN1 (0.30) | MEN1POLBKMT2A | |
| SCHEMBL11648239 | 0.75 | AKR1C1 (0.32) | MEN1POLBKMT2A | |
| SCHEMBL999023 | 0.75 | MEN1 (0.30) | MEN1POLBKMT2A | |
| SCHEMBL9270158 | 0.71 | — | — | |
| SCHEMBL8087905 | 0.71 | — | — | |
| SCHEMBL6536454 | 0.71 | ALDH1A1 (0.31) | — | |
| SCHEMBL28060933 | 0.71 | DPP4 (0.40) | — | |
| SCHEMBL3258571 | 0.71 | MEN1 (0.31) | MEN1POLBKMT2A | |
| Methane SCHEMBL1263169 | 0.70 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-0692833-B1 | Carbonaceous insertion compounds and use as anodes in rechargeable batteries | MOLI ENERGY 1990 LTD (CA) | 2001-11-21 | — | — | EP | claimed |
| EP-0692833-A1 | Carbonaceous insertion compounds and use as anodes in rechargeable batteries | MOLI ENERGY (1990) LIMITED (CA) | 1996-01-17 | — | — | EP | claimed |
| CN-106299080-A | Light emitting device and method for manufacturing the same | 亿光电子工业股份有限公司 | 2017-01-04 | — | — | CN | disclosed |
| EP-0432905-B1 | Polysilphenylenesiloxane, production process thereof, and resist material and semiconductor device formed thereof | FUJITSU LTD (JP) | 1998-02-04 | — | — | EP | disclosed |
| US-5484687-A | PHOTORESISTS, THREE-DIMENSIONAL, POLYSILSESQUIOXANES | FUJITSU LIMITED (JP) | 1996-01-16 | — | — | US | disclosed |
| EP-0432905-A2 | Polyisophenylenesiloxane, production process thereof, and resist material and semiconductor device formed thereof | FUJITSU LIMITED (JP) | 1991-06-19 | — | — | EP | disclosed |