Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.37 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.33 |
| ▸ | GAA | P10253 | 1/20 | 0.32 |
| ▸ | NPC1 | O15118 | 2/20 | 0.32 |
| ▸ | RAB9A | P51151 | 2/20 | 0.32 |
| ▸ | ABL1 | P00519 | 1/20 | 0.32 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
| ▸ | RIN1 | Q13671 | 1/20 | 0.32 |
| ▸ | LMNA | P02545 | 1/20 | 0.31 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12508905 | 0.89 | ALDH1A1 (0.33) | ALDH1A1NPSR1NPC1RAB9AABL1 | |
| SCHEMBL785924 | 0.88 | ALDH1A1 (0.50) | ALDH1A1NPSR1GAANPC1RAB9A | |
| SCHEMBL16202417 | 0.83 | KMT2A (0.40) | NPSR1GAANPC1 | |
| SCHEMBL17902851 | 0.82 | ALDH1A1 (0.45) | ALDH1A1NPSR1GAANPC1RAB9A | |
| SCHEMBL686174 | 0.82 | ALDH1A1 (0.39) | ALDH1A1NPSR1NPC1RAB9AABL1 | |
| SCHEMBL786405 | 0.82 | NPSR1 (0.32) | NPSR1 | |
| SCHEMBL2610451 | 0.81 | ALDH1A1 (0.44) | ALDH1A1NPSR1GAALMNA | |
| SCHEMBL12912767 | 0.80 | ALDH1A1 (0.51) | ALDH1A1NPSR1GAANPC1RAB9A | |
| SCHEMBL1398391 | 0.80 | ALDH1A1 (0.43) | ALDH1A1NPSR1GAALMNA | |
| SCHEMBL14731204 | 0.80 | ALDH1A1 (0.43) | ALDH1A1NPSR1GAANPC1RAB9A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 66 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10766992-B2 | Resin and resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2020-09-08 | — | — | US | disclosed |
| US-10377692-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2019-08-13 | — | — | US | disclosed |
| US-9726976-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-08-08 | — | — | US | disclosed |
| US-20170115566-A1 | RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-27 | — | — | US | disclosed |
| US-9268226-B2 | Resin, resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-02-23 | — | — | US | disclosed |
| US-9229320-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2016-01-05 | — | — | US | disclosed |
| US-9221785-B2 | Salt and photoresist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-12-29 | — | — | US | disclosed |
| US-20150301451-A1 | PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2015-10-22 | — | — | US | disclosed |
| US-9063414-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-06-23 | — | — | US | disclosed |
| US-9051405-B2 | Resin and resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-06-09 | — | — | US | disclosed |
| US-20100330497-A1 | CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-12-30 | — | — | US | disclosed |
| US-20100323296-A1 | RESIN AND RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-12-23 | — | — | US | disclosed |
| US-20100316951-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-12-16 | — | — | US | disclosed |
| US-20100304292-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMMPANY, LIMITED (JP) | 2010-12-02 | — | — | US | disclosed |
| US-20100304296-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-12-02 | — | — | US | disclosed |
| US-20100304294-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-12-02 | — | — | US | disclosed |
| US-20100203446-A1 | CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-08-12 | — | — | US | disclosed |
| US-20100062373-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-11 | — | — | US | disclosed |
| US-20100062374-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-11 | — | — | US | disclosed |
| US-20100062366-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-11 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20100316951-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | THEM6, INTS6, CRY1 | ALDH1A1 2847/4885NPSR1 2030/4885GAA 4884/4885 |
| US-20170115566-A1 | RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS | CASR, LIFR, LBR | ALDH1A1 4520/4885NPSR1 496/4885GAA 1776/4885 |
| US-20100304296-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | C1S, H1-0, H1-2 | ALDH1A1 918/4885NPSR1 1353/4885GAA 4334/4885 |
| US-20100304294-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | AFF1, F12, AP2A1 | ALDH1A1 667/4885NPSR1 527/4885GAA 4646/4885 |
| US-20100062373-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | RER1, ASH2L, PHF2 | ALDH1A1 3365/4885NPSR1 3415/4885GAA 2467/4885 |
| US-20100304292-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | CRY1, CHRM1, C1S | ALDH1A1 1184/4885NPSR1 1129/4885GAA 4492/4885 |
| US-10377692-B2 | Photoresist composition | C1R, C1S, F12 | ALDH1A1 2217/4885NPSR1 915/4885GAA 3793/4885 |
| US-20100062374-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | RER1, ARCN1, ASH2L | ALDH1A1 2034/4885NPSR1 2315/4885GAA 2723/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.