SCHEMBL785945

SCHEMBL785945

CC1OC(=O)C2C3CCC(C3)C12

nearest known ligand 0.33

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.33
KMT2A Q03164 1/20 0.33
CHRM2 P08172 13/20 0.32
CHRM1 P11229 13/20 0.32
CHRM4 P08173 8/20 0.32
CHRM3 P20309 8/20 0.32
CHRM5 P08912 1/20 0.32
F2R P25116 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL786154 0.82 CHRM2 (0.32) CHRM2CHRM1CHRM4CHRM3CHRM5
SCHEMBL9640386 0.69 SMN1; SMN2 (0.40) CHRM2CHRM1CHRM4CHRM3CHRM5
SCHEMBL9640383 0.69 SMN1; SMN2 (0.40) CHRM2CHRM1CHRM4CHRM3CHRM5
SCHEMBL10291119 0.68 CHRM2 (0.38) CHRM2CHRM1CHRM4CHRM3CHRM5
SCHEMBL18906439 0.67 KDM4E (0.46)
SCHEMBL19215231 0.66 LMNA (0.50) MEN1KMT2A
SCHEMBL9605761 0.66 LMNA (0.50) MEN1KMT2A
SCHEMBL10050520 0.66 LMNA (0.50) MEN1KMT2A
SCHEMBL10194829 0.66 LMNA (0.50) MEN1KMT2A
SCHEMBL17988728 0.66 LMNA (0.50) MEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230242467-A1 HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER MARUZEN PETROCHEMICAL CO., LTD. (JP) 2023-08-03 US disclosed
US-9546133-B2 Method for producing copolymer for semiconductor lithography containing reduced amount of metal impurities, and method for purifying polymerization initiator for production of copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2017-01-17 US disclosed
US-20160023992-A1 METHOD FOR PRODUCING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY CONTAINING REDUCED AMOUNT OF METAL IMPURITIES, AND METHOD FOR PURIFYING POLYMERIZATION INITIATOR FOR PRODUCTION OF COPOLYMER MARUZEN PETROCHEMICAL CO., LTD. 2016-01-28 US disclosed
US-9216948-B2 Method for producing copolymer for semiconductor lithography containing reduced amount of metal impurities, and method for purifying polymerization initiator for production of copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2015-12-22 US disclosed
US-8859180-B2 Copolymer and composition for semiconductor lithography and process for producing the copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2014-10-14 US disclosed
US-8859180-B2 Copolymer and composition for semiconductor lithography and process for producing the copolymer MARUZEN PETROCHEMICAL CO., LTD. (JP) 2014-10-14 US disclosed
US-8759462-B2 Method for producing resist copolymer having low molecular weight MARUZEN PETROCHEMICAL CO., LTD. (JP) 2014-06-24 US disclosed
US-8455596-B2 Method for producing a copolymer for photoresist MARUZEN PETROCHEMICAL CO., LTD. (JP) 2013-06-04 US disclosed
US-8455596-B2 Method for producing a copolymer for photoresist MARUZEN PETROCHEMICAL CO., LTD. (JP) 2013-06-04 US disclosed
US-20130123446-A1 METHOD FOR PRODUCING RESIST COPOLYMER HAVING LOW MOLECULAR WEIGHT MARUZEN PETROCHEMICAL CO., LTD. (JP) 2013-05-16 US disclosed
US-20100062371-A1 Copolymer and composition for semiconductor lithography and process for producing the copolymer MARUZEN PETROCHEMICAL CO., LTD (JP) 2010-03-11 US disclosed
US-20100048848-A1 PROCESS FOR PRODUCING POLYMER FOR SEMICONDUCTOR LITHOGRAPHY MARUZEN PETROCHEMICAL CO., LTD. (JP) 2010-02-25 US disclosed
US-20100047710-A1 COPOLYMER FOR IMMERSION LITHOGRAPHY AND COMPOSITIONS MARUZEN PETROCHEMICAL CO., LTD (JP) 2010-02-25 US disclosed
US-20090306328-A1 COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY AND PROCESS FOR PRODUCING THE SAME MARUZEN PETROCHEMICAL CO., LTD. (JP) 2009-12-10 US disclosed
US-20070269741-A1 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2007-11-22 US disclosed
US-20070269741-A1 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2007-11-22 US disclosed
US-7291441-B2 Positive resist composition and pattern forming method utilizing the same FUJIFILM CORPORATION (JP) 2007-11-06 US disclosed
US-7291441-B2 Positive resist composition and pattern forming method utilizing the same FUJIFILM CORPORATION (JP) 2007-11-06 US disclosed
US-7195856-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-03-27 US disclosed
US-7195856-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-03-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160023992-A1 METHOD FOR PRODUCING COPOLYMER FOR SEMICONDUCTOR LITHOGRAPHY CONTAINING REDUCED AMOUNT OF METAL IMPURITIES, AND METHOD FOR PURIFYING POLYMERIZATION INITIATOR FOR PRODUCTION OF COPOLYMER ORAI1, STOM, SORT1 MEN1 2581/4885KMT2A 3440/4885CHRM2 3595/4885
US-20230242467-A1 HIGH PURITY 4-HYDROXYSTYRENE SOLUTION, METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING 4-HYDROXYSTYRENE POLYMER HAAO, HPD, IL4 MEN1 3062/4885KMT2A 2116/4885CHRM2 3774/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.