SCHEMBL786222

SCHEMBL786222

CCC(C)C(=O)OC1CC2CCC1C2

nearest known ligand 0.46

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
ATM Q13315 1/20 0.46
GRM1 Q13255 6/20 0.46
CYP19A1 P11511 1/20 0.43
CTSV O60911 1/20 0.39
CTSL P07711 1/20 0.39
CTSS P25774 1/20 0.39
CTSK P43235 1/20 0.39
ALDH1A1 P00352 1/20 0.39
EPHX2 P34913 1/20 0.38
HPGD P15428 2/20 0.35
LMNA P02545 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34
HSD11B1 P28845 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13657228 0.93 GRM1 (0.39) ATMGRM1CYP19A1CTSVCTSL
SCHEMBL9916129 0.87 CYP19A1 (0.44) ATMGRM1CYP19A1CTSVCTSL
SCHEMBL6854496 0.84 CYP19A1 (0.47) ATMGRM1CYP19A1CTSVCTSL
SCHEMBL824268 0.83 GRM1 (0.38) ATMGRM1CYP19A1CTSVCTSL
SCHEMBL10064889 0.83 ATM (0.43) ATMGRM1CYP19A1CTSVCTSL
SCHEMBL6854606 0.83 ATM (0.51) ATMGRM1CYP19A1CTSVCTSL
SCHEMBL10045202 0.83 ATM (0.51) ATMGRM1CYP19A1CTSVCTSL
SCHEMBL29066362 0.83 CTSV (0.44) ATMGRM1CYP19A1CTSVCTSL
SCHEMBL20691807 0.83 ATM (0.49) ATMGRM1CYP19A1CTSVCTSL
SCHEMBL824212 0.82 GRM1 (0.38) ATMGRM1CYP19A1CTSVCTSL

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 75 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9822060-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-11-21 US disclosed
US-9760005-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-09-12 US disclosed
US-9758466-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-09-12 US disclosed
US-9726974-B2 Resin, photoresist composition, and method for producing photoresist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-9671692-B2 Compound, resin and photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-06-06 US disclosed
US-9671692-B2 Compound, resin and photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-06-06 US disclosed
US-9644056-B2 Compound, resin and photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-05-09 US disclosed
US-9638996-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-05-02 US disclosed
US-9638996-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-05-02 US disclosed
US-9612533-B2 Salt and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-04-04 US disclosed
US-20090066898-A1 OPTICALLY-COMPENSATORY SHEET, ELLIPSOIDAL POLARIZING PLATE AND LIQUID CRYSTAL DISPLAY DEVICE FUJIFILM CORPORATION (JP) 2009-03-12 US disclosed
US-7502088-B2 Liquid crystal display device having an antiglare layer FUJIFILM CORPORATION (JP) 2009-03-10 US disclosed
US-20090042129-A1 POSITIVE RESIST COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION TOKYO OHKA KOGYO CO., LTD. (JP) 2009-02-12 US disclosed
US-7307679-B2 Liquid-crystal display and polarizing plate FUJIFILM CORPORATION (JP) 2007-12-11 US disclosed
US-20070269741-A1 Copolymer for positive type lithography, polymerization initiator used in production of said copolymer, and composition for semiconductor lithography MARUZEN PETROCHEMICAL CO., LTD. (JP) 2007-11-22 US disclosed
US-20070178407-A1 Polymer, resist protective coating material, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-08-02 US disclosed
US-7232642-B2 Chemically amplified positive resist composition, a haloester derivative and a process for producing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-06-19 US disclosed
US-20070122736-A1 RESIST PROTECTIVE FILM MATERIAL AND PATTERN FORMATION METHOD SHIN-ETSU CHEMICAL CO., LTD. 2007-05-31 US disclosed
US-20070122741-A1 Resist protective coating material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-31 US disclosed
US-20070002232-A1 Optical compensation film, polarizing plate and liquid crystal display device FUJI PHOTO FILM CO., LTD. (JP) 2007-01-04 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090066898-A1 OPTICALLY-COMPENSATORY SHEET, ELLIPSOIDAL POLARIZING PLATE AND LIQUID CRYSTAL DISPLAY DEVICE SMN1; SMN2, SPOP, RHOXF2 ATM 1033/4885GRM1 4628/4885CYP19A1 4135/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.