SCHEMBL824212

SCHEMBL824212

CCC(C)C(=O)OC(C)OC1CC2CCC1C2

nearest known ligand 0.38

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
GRM1 Q13255 2/20 0.38
ATM Q13315 1/20 0.36
ALDH1A1 P00352 1/20 0.36
EPHX2 P34913 1/20 0.35
CYP19A1 P11511 1/20 0.34
HPGD P15428 2/20 0.33
CTSV O60911 1/20 0.33
CTSL P07711 1/20 0.33
CTSS P25774 1/20 0.33
CTSK P43235 1/20 0.33
PDE4A P27815 1/20 0.31
PDE4B Q07343 1/20 0.31
PDE4C Q08493 1/20 0.31
PDE4D Q08499 1/20 0.31
LMNA P02545 1/20 0.31
SMN1; SMN2 Q16637 1/20 0.31
HSD11B1 P28845 1/20 0.31
POLB P06746 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15082433 0.89 GRM1 (0.40) GRM1ATMALDH1A1EPHX2CYP19A1
SCHEMBL15279601 0.85 ATM (0.40) GRM1ATMALDH1A1EPHX2CYP19A1
SCHEMBL786222 0.82 ATM (0.46) GRM1ATMALDH1A1EPHX2CYP19A1
SCHEMBL2739851 0.80 ATM (0.41) GRM1ATMALDH1A1CYP19A1HPGD
SCHEMBL824268 0.78 GRM1 (0.38) GRM1ATMALDH1A1EPHX2CYP19A1
SCHEMBL47404 0.78 GRM1 (0.36) GRM1ATMALDH1A1EPHX2CYP19A1
SCHEMBL824210 0.78 HSD11B1 (0.33) ALDH1A1EPHX2HSD11B1
SCHEMBL13361044 0.78 ATM (0.33) GRM1ATMALDH1A1EPHX2CYP19A1
SCHEMBL9916129 0.76 CYP19A1 (0.44) GRM1ATMALDH1A1EPHX2CYP19A1
SCHEMBL824287 0.76

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 162 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9105929-B2 Negative electrode base member TOKYO OHKA KOGYO CO., LTD. (JP) 2015-08-11 US disclosed
US-9040220-B2 Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-05-26 US disclosed
US-9034556-B2 Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-05-19 US disclosed
US-8927147-B2 Negative electrode base member KANTO GAKUIN SCHOOL CORPORATION (JP) 2015-01-06 US disclosed
US-8900788-B2 Resist composition for immersion exposure and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2014-12-02 US disclosed
US-8742038-B2 Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-06-03 US disclosed
US-8642244-B2 Resist composition for immersion exposure, method of forming resist pattern using the same, and fluorine-containing compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-02-04 US disclosed
US-8574813-B2 Resist composition for immersion exposure and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2013-11-05 US disclosed
US-8551651-B2 Secondary cell having negative electrode base member TOKYO OHKA KOGYO CO., LTD. (JP) 2013-10-08 US disclosed
US-20130252099-A1 NEGATIVE ELECTRODE BASE MEMBER KANTO GAKUIN UNIVERSITY SURFACE ENGINEERING RESEARCH INSTITUTE (JP) 2013-09-26 US disclosed
US-20090004598-A1 Resist Composition And Method For Forming Resist Pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2009-01-01 US disclosed
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed
US-20080311512-A1 PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PATTERN FORMING TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed
US-20080311515-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2008-12-18 US disclosed
US-20080292988-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD (JP) 2008-11-27 US disclosed
US-20080268376-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-30 US disclosed
US-20080248422-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-09 US disclosed
US-20080193871-A1 Positive Resist Composition For Immersion Exposure and Method of Forming Resist Pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2008-08-14 US disclosed
US-20080090171-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2008-04-17 US disclosed
US-20070231708-A1 Polymer Compound, Acid Generator, Positive Resist Composition, and Method for Formation of Resist Patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2007-10-04 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080311522-A1 Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation GNG2, ACAD9, SCO2 GRM1 1193/4885ATM 599/4885ALDH1A1 1184/4885
US-20080248422-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR RER1, ACAD9, RRS1 GRM1 115/4885ATM 1986/4885ALDH1A1 796/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.