Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | METAP2 | P50579 | 1/20 | 0.46 |
| ▸ | NUDT1 | P36639 | 1/20 | 0.43 |
| ▸ | BACE1 | P56817 | 1/20 | 0.42 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.42 |
| ▸ | PSMB5 | P28074 | 2/20 | 0.42 |
| ▸ | HDAC7 | Q8WUI4 | 1/20 | 0.42 |
| ▸ | CYP2A6 | P11509 | 1/20 | 0.40 |
| ▸ | CYP2B6 | P20813 | 1/20 | 0.40 |
| ▸ | PTGDR2 | Q9Y5Y4 | 1/20 | 0.40 |
| ▸ | LMNA | P02545 | 2/20 | 0.39 |
| ▸ | TSHR | P16473 | 2/20 | 0.39 |
| ▸ | ALOX12 | P18054 | 1/20 | 0.39 |
| ▸ | ACHE | P22303 | 1/20 | 0.39 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.39 |
| ▸ | MCOLN3 | Q8TDD5 | 1/20 | 0.39 |
| ▸ | HPRT1 | P00492 | 1/20 | 0.38 |
| ▸ | MAOB | P27338 | 2/20 | 0.38 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.38 |
| ▸ | AKT1 | P31749 | 1/20 | 0.38 |
| ▸ | AKT2 | P31751 | 1/20 | 0.38 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4473036 | 0.80 | METAP2 (0.48) | METAP2NUDT1BACE1ESR2PSMB5 | |
| SCHEMBL456551 | 0.80 | ALDH1A1 (0.47) | BACE1CYP2A6LMNASMN1; SMN2HPRT1 | |
| SCHEMBL27928636 | 0.78 | ALDH1A1 (0.45) | BACE1CYP2A6LMNASMN1; SMN2HPRT1 | |
| SCHEMBL27781809 | 0.78 | METAP2 (0.47) | METAP2NUDT1BACE1ESR2PSMB5 | |
| Potassium SCHEMBL29843830 | 0.78 | ALDH1A1 (0.45) | BACE1CYP2A6LMNASMN1; SMN2HPRT1 | |
| SCHEMBL7434020 | 0.77 | HDAC7 (0.47) | METAP2NUDT1BACE1ESR2PSMB5 | |
| SCHEMBL16404870 | 0.77 | KDM4E (0.40) | BACE1ESR2CYP2A6CYP2B6HPRT1 | |
| SCHEMBL49679 | 0.76 | METAP2 (0.46) | METAP2NUDT1BACE1ESR2PSMB5 | |
| SCHEMBL8720645 | 0.76 | ALDH1A1 (0.55) | BACE1ESR2ALDH1A1CA12CA1 | |
| SCHEMBL21333851 | 0.76 | METAP2 (0.50) | METAP2NUDT1BACE1ESR2PSMB5 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4016656-A1 | ORGANOMETALLIC COMPOUND, ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME, AND DIAGNOSTIC COMPOSITION INCLUDING THE ORGANOMETALLIC COMPOUND | Samsung Electronics Co., Ltd. (KR) | 2022-06-22 | — | — | EP | disclosed |
| US-9791776-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-10-17 | — | — | US | disclosed |
| US-9176379-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-11-03 | — | — | US | disclosed |
| US-9176378-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-11-03 | — | — | US | disclosed |
| US-9128373-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-09-08 | — | — | US | disclosed |
| US-8940473-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2015-01-27 | — | — | US | disclosed |
| US-8859182-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2014-10-14 | — | — | US | disclosed |
| US-8835095-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2014-09-16 | — | — | US | disclosed |
| US-8741537-B2 | Positive resist composition and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2014-06-03 | — | — | US | disclosed |
| US-8741537-B2 | Positive resist composition and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2014-06-03 | — | — | US | disclosed |
| US-20120219907-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-08-30 | — | — | US | disclosed |
| US-20120219908-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-08-30 | — | — | US | disclosed |
| US-20120219904-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-08-30 | — | — | US | disclosed |
| US-20120219909-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-08-30 | — | — | US | disclosed |
| US-20120219912-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-08-30 | — | — | US | disclosed |
| US-7504194-B2 | Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent | FUJIFILM CORPORATION (JP) | 2009-03-17 | — | — | US | disclosed |
| US-7504194-B2 | Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent | FUJIFILM CORPORATION (JP) | 2009-03-17 | — | — | US | disclosed |
| US-20070134590-A1 | Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent | FUJIFILM CORPORATION. (JP) | 2007-06-14 | — | — | US | disclosed |
| US-20070134590-A1 | Resin showing an increase in solubility in alkali developer by action of an acid, a compound being capable of generating an acid when irradiated with an actinic ray or radiation, an acrylic resin with silicon-containing units and being stable to acids but insoluble in alkali developer, solvent | FUJIFILM CORPORATION. (JP) | 2007-06-14 | — | — | US | disclosed |
| US-6183934-B1 | FOE USE IN FORMATION OF PATTERN OF INSULATION FILM, PASSIVATION FILM, .ALPHA.-RAY SHIELDING FILM, OPTICAL WAVEGUIDE | KABUSHIKI KAISHA TOSHIBA (JP) | 2001-02-06 | — | — | US | disclosed |