Predicted protein targets (top 10)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.33 |
| ▸ | MEN1 | O00255 | 1/20 | 0.32 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.32 |
| ▸ | HPGD | P15428 | 3/20 | 0.32 |
| ▸ | HTT | P42858 | 1/20 | 0.32 |
| ▸ | SLC6A3 | Q01959 | 2/20 | 0.31 |
| ▸ | LMNA | P02545 | 1/20 | 0.31 |
| ▸ | POLB | P06746 | 1/20 | 0.31 |
| ▸ | USP2 | O75604 | 1/20 | 0.31 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15114535 | 0.79 | MEN1 (0.31) | MEN1KMT2A | |
| SCHEMBL15114499 | 0.79 | SLC6A3 (0.33) | MEN1KMT2ASLC6A3 | |
| SCHEMBL8029828 | 0.78 | KEAP1 (0.37) | MEN1KMT2A | |
| SCHEMBL4888357 | 0.78 | ALDH1A1 (0.32) | ALDH1A1MEN1KMT2ASLC6A3 | |
| SCHEMBL8028140 | 0.76 | KEAP1 (0.36) | — | |
| SCHEMBL7919980 | 0.72 | SMN1; SMN2 (0.32) | ALDH1A1KMT2AHPGDLMNAPOLB | |
| SCHEMBL8762985 | 0.71 | KEAP1 (0.46) | ALDH1A1HPGDSLC6A3SMN1; SMN2 | |
| SCHEMBL12928721 | 0.71 | KMT2A (0.30) | KMT2A | |
| SCHEMBL15113908 | 0.70 | POLB (0.30) | MEN1KMT2ASLC6A3POLB | |
| SCHEMBL4850872 | 0.70 | TP53 (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6165680-A | Dissolution inhibitor of chemically amplified photoresist and chemically amplified photoresist composition containing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2000-12-26 | — | — | US | claimed |
| US-6083659-A | POLYMER WITH ACID-LABILE DI-ALKYLMALONATE GROUP BLENDED WITH (METH)ACRYLATE POLYMER; SEMICONDUCTORS; RESOLUTION, CONTRAST | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2000-07-04 | — | — | US | claimed |
| US-6045970-A | A CHEMICALLY AMPLIFIED PHOTORESIST HAVING AN ACID-LABILE GROUP WHICH IS EASILY HYDROLYSIS BY AN ACIDIC CATALYST; FOR FORMING A PATTERN HAVING AN EXCELLENT PROFILE DUE TO THE HIGH CONTRAST AND HIGH THERMAL DECOMPOSITION TEMPERATURE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2000-04-04 | — | — | US | claimed |
| US-6165680-A | Dissolution inhibitor of chemically amplified photoresist and chemically amplified photoresist composition containing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2000-12-26 | — | — | US | disclosed |
| US-6083659-A | POLYMER WITH ACID-LABILE DI-ALKYLMALONATE GROUP BLENDED WITH (METH)ACRYLATE POLYMER; SEMICONDUCTORS; RESOLUTION, CONTRAST | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2000-07-04 | — | — | US | disclosed |
| US-6045970-A | A CHEMICALLY AMPLIFIED PHOTORESIST HAVING AN ACID-LABILE GROUP WHICH IS EASILY HYDROLYSIS BY AN ACIDIC CATALYST; FOR FORMING A PATTERN HAVING AN EXCELLENT PROFILE DUE TO THE HIGH CONTRAST AND HIGH THERMAL DECOMPOSITION TEMPERATURE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2000-04-04 | — | — | US | disclosed |