Predicted protein targets (top 16)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GRM1 | Q13255 | 3/20 | 0.36 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.35 |
| ▸ | ATM | Q13315 | 1/20 | 0.35 |
| ▸ | EPHX2 | P34913 | 1/20 | 0.33 |
| ▸ | LNPEP | Q9UIQ6 | 1/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
| ▸ | CTSV | O60911 | 1/20 | 0.32 |
| ▸ | CTSL | P07711 | 1/20 | 0.32 |
| ▸ | CTSS | P25774 | 1/20 | 0.32 |
| ▸ | CTSK | P43235 | 1/20 | 0.32 |
| ▸ | BRS3 | P32247 | 2/20 | 0.32 |
| ▸ | IRAK4 | Q9NWZ3 | 3/20 | 0.31 |
| ▸ | LMNA | P02545 | 1/20 | 0.30 |
| ▸ | HPGD | P15428 | 1/20 | 0.30 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.30 |
| ▸ | HSD11B1 | P28845 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17515673 | 0.87 | GRM1 (0.34) | GRM1CYP19A1ATMEPHX2LNPEP | |
| SCHEMBL15082432 | 0.86 | GRM1 (0.36) | GRM1CYP19A1ATMEPHX2ALDH1A1 | |
| SCHEMBL16591044 | 0.85 | GRM1 (0.35) | GRM1CYP19A1ATMEPHX2 | |
| SCHEMBL16866412 | 0.85 | GRM1 (0.36) | GRM1CYP19A1ATMEPHX2LNPEP | |
| SCHEMBL16591114 | 0.83 | GRM1 (0.34) | GRM1CYP19A1ATMEPHX2 | |
| SCHEMBL14527804 | 0.83 | GRM1 (0.32) | GRM1CYP19A1ATMEPHX2LNPEP | |
| SCHEMBL14479488 | 0.80 | ATM (0.46) | GRM1CYP19A1ATMEPHX2CTSV | |
| SCHEMBL132929 | 0.80 | ATM (0.46) | GRM1CYP19A1ATMEPHX2CTSV | |
| SCHEMBL26188178 | 0.79 | LMNA (0.34) | EPHX2ALDH1A1LMNA | |
| SCHEMBL47428 | 0.79 | HSD11B1 (0.32) | EPHX2HSD11B1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 440 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11780946-B2 | Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-10-10 | — | — | US | disclosed |
| US-11709425-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-25 | — | — | US | disclosed |
| US-11703756-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-18 | — | — | US | disclosed |
| US-11703757-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-07-18 | — | — | US | disclosed |
| US-20230205084-A1 | RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-06-29 | — | — | US | disclosed |
| US-11667605-B2 | Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-06-06 | — | — | US | disclosed |
| US-11650497-B2 | Resist composition and method of forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2023-05-16 | — | — | US | disclosed |
| US-10031419-B2 | Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device | FUJIFILM CORPORATION (JP) | 2018-07-24 | — | — | US | disclosed |
| US-20180149973-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2018-05-31 | — | — | US | disclosed |
| US-20180120701-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2018-05-03 | — | — | US | disclosed |
| US-20090004598-A1 | Resist Composition And Method For Forming Resist Pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-01-01 | — | — | US | disclosed |
| US-20080311522-A1 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080311512-A1 | PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR PATTERN FORMING | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080311515-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-12-18 | — | — | US | disclosed |
| US-20080292988-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD (JP) | 2008-11-27 | — | — | US | disclosed |
| US-20080268376-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE, METHOD OF FORMING RESIST PATTERN, AND FLUORINE-CONTAINING POLYMERIC COMPOUND | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-30 | — | — | US | disclosed |
| US-20080248422-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-10-09 | — | — | US | disclosed |
| US-20080193871-A1 | Positive Resist Composition For Immersion Exposure and Method of Forming Resist Pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080090171-A1 | POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-04-17 | — | — | US | disclosed |
| US-20070231708-A1 | Polymer Compound, Acid Generator, Positive Resist Composition, and Method for Formation of Resist Patterns | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-10-04 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11709425-B2 | Resist composition and method of forming resist pattern | RER1, RRS1, RXFP4 | GRM1 87/4885CYP19A1 280/4885ATM 4557/4885 |
| US-20080311522-A1 | Comprising base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon irradiation | GNG2, ACAD9, SCO2 | GRM1 1193/4885CYP19A1 441/4885ATM 599/4885 |
| US-20180149973-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID GENERATOR | MCM4, RFC4, ATP1A4 | GRM1 598/4885CYP19A1 596/4885ATM 3265/4885 |
| US-11667605-B2 | Resist composition, method of forming resist pattern, compound, acid generator, and method of producing compound | RB1, RBBP5, RRM2B | GRM1 1168/4885CYP19A1 319/4885ATM 612/4885 |
| US-20080248422-A1 | RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR | RER1, ACAD9, RRS1 | GRM1 115/4885CYP19A1 683/4885ATM 1986/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.