SCHEMBL824307

SCHEMBL824307

CCC(C)C(=O)OCCOCC(=O)OC1(C)C2CC3CC(C2)CC1C3

nearest known ligand 0.38

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
CYP17A1 P05093 2/20 0.38
CYP19A1 P11511 2/20 0.38
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10229824 0.88 CYP17A1 (0.40) CYP17A1CYP19A1
SCHEMBL824232 0.88 CYP17A1 (0.41) CYP17A1CYP19A1ALDH1A1
SCHEMBL824310 0.88 ALDH1A1 (0.30) ALDH1A1
SCHEMBL11946899 0.86 CYP17A1 (0.40) CYP17A1CYP19A1ALDH1A1
SCHEMBL824227 0.86 CYP17A1 (0.40) CYP17A1CYP19A1
SCHEMBL2611762 0.84 CYP17A1 (0.41) CYP17A1CYP19A1ALDH1A1
SCHEMBL11948969 0.84 CYP17A1 (0.39) CYP17A1CYP19A1
SCHEMBL110539 0.81 CYP17A1 (0.40) CYP17A1CYP19A1ALDH1A1
SCHEMBL47426 0.79 CYP17A1 (0.37) CYP17A1CYP19A1
SCHEMBL950092 0.79 THRB (0.44) CYP17A1CYP19A1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9040220-B2 Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-05-26 US disclosed
US-9034556-B2 Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-05-19 US disclosed
US-20140127626-A1 RESIST COMPOSITION FOR NEGATIVE DEVELOPMENT WHICH IS USED FOR FORMATION OF GUIDE PATTERN, GUIDE PATTERN FORMATION METHOD, AND METHOD FOR FORMING PATTERN ON LAYER CONTAINING BLOCK COPOLYMER RIKEN (JP) 2014-05-08 US disclosed
US-8518629-B2 Resist composition for immersion exposure and method of forming resist pattern using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2013-08-27 US disclosed
US-8475997-B2 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2013-07-02 US disclosed
US-8338075-B2 Base component which exhibits increased solubility in an alkali developing solution under the action of acid, an acid generator, and organic solvent having a boiling point of at least 150 degrees C.; hole-like resist pattern can be formed with a high level of resolution and minute dimensions TOKYO OHKA KOGYO CO., LTD. (JP) 2012-12-25 US disclosed
US-8324331-B2 Fluorine-containing compound and polymeric compound DAITO CHEMIX CORPORATION (JP) 2012-12-04 US disclosed
US-8252505-B2 Compound and method of producing same, acid generator, resist composition, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-28 US disclosed
US-8247160-B2 Resist composition, method of forming resist pattern, and novel compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-21 US disclosed
US-8221956-B2 Resist composition for immersion exposure, method of forming resist pattern, and flourine-containing polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2012-07-17 US disclosed
US-7682772-B2 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2010-03-23 US disclosed
US-20100047724-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-02-25 US disclosed
US-20100015555-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NOVEL COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2010-01-21 US disclosed
US-20090317743-A1 Resist composition for immersion exposure, method of forming resist pattern, and flourine-containing polymeric compound TOKYO OHKA KOGYO CO., LTD. 2009-12-24 US disclosed
US-20090311627-A1 Resist composition for immersion exposure and method of forming resist pattern using the same TOKYO OHKA KOGYO CO., LTD. 2009-12-17 US disclosed
US-20090226842-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-09-10 US disclosed
US-20090208871-A1 NOVEL COMPOUND AND METHOD OF PRODUCING SAME, ACID GENERATOR, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-08-20 US disclosed
US-20090162788-A1 NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-06-25 US disclosed
US-20090130597-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2009-05-21 US disclosed
US-20090098484-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2009-04-16 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100015555-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NOVEL COMPOUND AND ACID GENERATOR RER1, SLC11A2, FRG1 CYP17A1 209/4885CYP19A1 168/4885ALDH1A1 1139/4885
US-20090130597-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR RER1, ASIC1, ABCC1 CYP17A1 466/4885CYP19A1 71/4885ALDH1A1 769/4885
US-20090208871-A1 NOVEL COMPOUND AND METHOD OF PRODUCING SAME, ACID GENERATOR, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN COASY, SLC11A2, AKR7A2 CYP17A1 160/4885CYP19A1 45/4885ALDH1A1 193/4885
US-20090162788-A1 NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN RER1, ASIC1, GLRA1 CYP17A1 559/4885CYP19A1 113/4885ALDH1A1 987/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.