SCHEMBL855402

SCHEMBL855402

C=C(C)C(=O)OCOCC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.45

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 5/20 0.45
MEN1 O00255 3/20 0.43
KMT2A Q03164 3/20 0.43
L3MBTL1 Q9Y468 2/20 0.43
CA12 O43570 1/20 0.39
CA1 P00915 1/20 0.39
CA2 P00918 1/20 0.39
CA9 Q16790 1/20 0.39
THRB P10828 1/20 0.38
TSHR P16473 4/20 0.36
MAPT P10636 3/20 0.35
ATM Q13315 1/20 0.35
HSD17B10 Q99714 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3797993 0.87 ALDH1A1 (0.54) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL20349638 0.87 ALDH1A1 (0.54) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL2739905 0.83 ALDH1A1 (0.50) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL13963874 0.81 CYP3A4 (0.37) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL1506678 0.81 ALDH1A1 (0.46) ALDH1A1MEN1KMT2AL3MBTL1CA12
SCHEMBL13963880 0.80 THRB (0.37) ALDH1A1MEN1KMT2AL3MBTL1THRB
SCHEMBL12021005 0.79 KMT2A (0.42) ALDH1A1MEN1KMT2AMAPTATM
SCHEMBL13963878 0.79 CYP3A4 (0.34) ALDH1A1MEN1KMT2AL3MBTL1MAPT
SCHEMBL13963852 0.79 NPSR1 (0.38) ALDH1A1MEN1KMT2AL3MBTL1MAPT
SCHEMBL13963876 0.79 ALDH1A1 (0.34) ALDH1A1MEN1KMT2AL3MBTL1CA12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9023580-B2 Method of forming polymeric compound, resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-05-05 US disclosed
EP-2433972-B1 Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern TOKYO OHKA KOGYO CO LTD (JP) 2014-11-12 EP disclosed
EP-2433972-B1 Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern TOKYO OHKA KOGYO CO LTD (JP) 2014-11-12 EP disclosed
EP-1717261-B1 POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO LTD (JP) 2014-01-01 EP disclosed
EP-1717261-B1 POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO LTD (JP) 2014-01-01 EP disclosed
US-20130137049-A1 METHOD OF FORMING POLYMERIC COMPOUND, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-30 US disclosed
EP-2433972-A1 Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern Tokyo Ohka Kogyo Co., Ltd. (JP) 2012-03-28 EP disclosed
US-7723007-B2 Polymer compound, photoresist composition including the polymer compound, and resist pattern formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2010-05-25 US disclosed
US-7723007-B2 Polymer compound, photoresist composition including the polymer compound, and resist pattern formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2010-05-25 US disclosed
US-7723007-B2 Polymer compound, photoresist composition including the polymer compound, and resist pattern formation method TOKYO OHKA KOGYO CO., LTD. (JP) 2010-05-25 US disclosed
US-7718342-B2 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-05-18 US disclosed
US-20080166655-A1 Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method OGATA TOSHIYUKI 2008-07-10 US disclosed
US-20080166655-A1 Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method OGATA TOSHIYUKI 2008-07-10 US disclosed
US-20080166655-A1 Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method OGATA TOSHIYUKI 2008-07-10 US disclosed
US-20070148594-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-06-28 US disclosed
EP-1717261-A1 POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2006-11-02 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080166655-A1 Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method CRHR1, ADH1C, ADH1A ALDH1A1 253/4885MEN1 3193/4885KMT2A 1751/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.