SCHEMBL8736764

SCHEMBL8736764

O=C(Nc1ccccc1)OC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.56

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
EPHX2 P34913 6/20 0.56
P2RX7 Q99572 5/20 0.56
SMN1; SMN2 Q16637 2/20 0.48
LMNA P02545 1/20 0.48
MC4R P32245 1/20 0.48
DPP4 P27487 1/20 0.47
CA2 P00918 2/20 0.46
CYP2D6 P10635 1/20 0.44
MAPT P10636 1/20 0.44
ENPP3 O14638 1/20 0.44
ENPP1 P22413 1/20 0.44
ENPP2 Q13822 1/20 0.44
CA9 Q16790 1/20 0.44
FAAH O00519 1/20 0.44
ALDH1A1 P00352 1/20 0.44
GAA P10253 1/20 0.44
HTT P42858 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17344397 0.91 DPP4 (0.53) EPHX2P2RX7SMN1; SMN2LMNAMC4R
SCHEMBL12745477 0.87 MGLL (0.54) EPHX2P2RX7ENPP2FAAH
SCHEMBL17344417 0.87 EPHX2 (0.45) EPHX2P2RX7SMN1; SMN2LMNAMC4R
SCHEMBL12745770 0.86 EPHX2 (0.57) EPHX2P2RX7CA2MAPTALDH1A1
SCHEMBL28562936 0.86 DPP4 (0.50) EPHX2P2RX7SMN1; SMN2LMNAMC4R
SCHEMBL3361162 0.84 DPP4 (0.49) EPHX2P2RX7SMN1; SMN2LMNAMC4R
SCHEMBL12826766 0.84 P2RX7 (0.53) EPHX2P2RX7CA2ALDH1A1
SCHEMBL13893813 0.84 MAPT (0.48) EPHX2P2RX7CA2MAPTCA9
SCHEMBL12745752 0.84 NPC1 (0.61) EPHX2SMN1; SMN2CA2MAPTALDH1A1
SCHEMBL12745616 0.83 ALDH1A1 (0.49) EPHX2SMN1; SMN2CA2MAPTFAAH

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 274 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11584810-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, pattern forming method, method of manufacturing electronic device, compound, and resin FUJIFILM CORPORATION (JP) 2023-02-21 US disclosed
CN-112759545-A 3- (dimethylamino methyl) piperidine-4-alcohol derivative and preparation method and pharmaceutical application thereof 复旦大学 2021-05-07 CN disclosed
US-20190204736-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2019-07-04 US disclosed
US-20190171104-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD OF MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND RESIN FUJIFILM CORPORATION (JP) 2019-06-06 US disclosed
US-10234759-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film and method of forming pattern FUJIFILM CORPORATION (JP) 2019-03-19 US disclosed
US-9915870-B2 Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2018-03-13 US disclosed
US-9915870-B2 Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device FUJIFILM CORPORATION (JP) 2018-03-13 US disclosed
US-9885956-B2 Pattern forming method, and, electronic device producing method and electronic device, each using the same FUJIFILM CORPORATION (JP) 2018-02-06 US disclosed
EP-2356516-B1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE COMPOSITION FUJIFILM CORP (JP) 2017-10-25 EP disclosed
US-9760003-B2 Pattern forming method and actinic-ray- or radiation-sensitive resin composition FUJIFILM CORPORATION (JP) 2017-09-12 US disclosed
WO-2011149035-A1 PATTERN FORMING METHOD AND ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION FUJIFILM CORPORATION (JP) 2011-12-01 WO disclosed
WO-2011118853-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2011-09-29 WO disclosed
US-20110091809-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-04-21 US disclosed
US-20110091809-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-04-21 US disclosed
US-20100323305-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2010-12-23 US disclosed
US-20100323305-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2010-12-23 US disclosed
US-20100239978-A1 PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD AND RESIST FILM USING THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2010-09-23 US disclosed
US-20100239978-A1 PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD AND RESIST FILM USING THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2010-09-23 US disclosed
US-20100015554-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-01-21 US disclosed
US-20100015554-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-01-21 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-10234759-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film and method of forming pattern AFF1, MACF1, RER1 EPHX2 1435/4885P2RX7 1837/4885SMN1; SMN2 910/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.