SCHEMBL8744236

SCHEMBL8744236

O=[N+]([O-])c1ccc(C(O)c2ccccc2)c([N+](=O)[O-])c1

nearest known ligand 0.52

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CRHBP P24387 1/20 0.52
CRHR2 Q13324 1/20 0.52
MAP2K1 Q02750 1/20 0.51
CES2 O00748 1/20 0.49
ALDH1A1 P00352 3/20 0.49
GPR35 Q9HC97 2/20 0.49
MAPK1 P28482 2/20 0.49
TP53 P04637 1/20 0.49
HPGD P15428 1/20 0.49
TSHR P16473 1/20 0.49
SMN1; SMN2 Q16637 1/20 0.49
HSP90AA1 P07900 1/20 0.47
TLR9 Q9NR96 1/20 0.47
GRM8 O00222 1/20 0.46
GRM4 Q14833 1/20 0.46
TDP1 Q9NUW8 1/20 0.46
ACP3 P15309 1/20 0.46
CYP1A2 P05177 2/20 0.45
HIF1A Q16665 2/20 0.45
MEN1 O00255 2/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8744250 0.87 ALDH1A1 (0.58) MAP2K1CES2ALDH1A1GPR35MAPK1
SCHEMBL9682909 0.84 CRHBP (0.42) CRHBPCRHR2MAP2K1ALDH1A1GPR35
SCHEMBL14744514 0.83 ALDH1A1 (0.47) CRHBPCRHR2ALDH1A1HSP90AA1TDP1
SCHEMBL31633570 0.82 CYP1A2 (0.56) CRHBPCRHR2ALDH1A1GPR35MAPK1
SCHEMBL5583438 0.82 CYP1A2 (0.56) CRHBPCRHR2ALDH1A1GPR35MAPK1
SCHEMBL11740225 0.81 ALDH1A1 (0.51) CRHBPCRHR2ALDH1A1GPR35MAPK1
SCHEMBL3379925 0.81 ALDH1A1 (0.47) CRHBPCRHR2MAP2K1ALDH1A1TSHR
SCHEMBL14744361 0.80 ALDH1A1 (0.44) CRHBPCRHR2ALDH1A1TDP1ACP3
SCHEMBL6556910 0.80 LMNA (0.50) ALDH1A1MAPK1TP53HPGDTSHR
SCHEMBL1813716 0.78 CA12 (0.58) CRHBPCRHR2CES2ALDH1A1MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-0155231-B2 Image-producing process CIBA GEIGY AG (CH) 1997-01-15 EP disclosed
US-5508141-A AQUEOUS ACIDIC PHOTORESIST EMULSION CONTAINING RESIN, POSITIVE-ACTING PHOTOACTIVE FUNCTIONALITY, ACID, OXIDIZING AGENT, SURFACTANT W. R. GRACE & CO.-CONN. (US) 1996-04-16 US disclosed
EP-0468002-A4 AUTODEPOSITION EMULSION FOR SELECTIVELY PROTECTING METALLIC SURFACES GRACE W R & CO (US) 1995-08-09 EP disclosed
US-5232815-A Corrosion resistance W. R. GRACE & CO.-CONN. (US) 1993-08-03 US disclosed
EP-0337258-B1 LIGHT SENSITIVE COMPOSITIONS FOR LIGHT SENSITIVE COATING MATERIALS AND PROCESSES FOR OBTAINING RELIEF PATTERNS AND IMAGES BASF Aktiengesellschaft (DE) 1993-06-23 EP disclosed
EP-0518453-A1 A method of making electrical circuit traces W.R. Grace & Co.-Conn. (US) 1992-12-16 EP disclosed
EP-0277555-B1 COPOLYMERS WITH 0-NITROCARBINOL ESTER GROUPS, AND PROCESS FOR PREPARING TWO-LAYER RESISTS AND SEMICONDUCTOR DEVICES BASF Aktiengesellschaft (DE) 1992-04-08 EP disclosed
EP-0468002-A1 AUTODEPOSITION EMULSION FOR SELECTIVELY PROTECTING METALLIC SURFACES W.R. GRACE & CO.-CONN. (US) 1992-01-29 EP disclosed
EP-0271010-B1 COPOLYMERS WITH 0-NITROCARBINOL ESTER GROUPS, AND THEIR USE BASF Aktiengesellschaft (DE) 1991-12-11 EP disclosed
WO-1991008840-A1 AUTODEPOSITION EMULSION FOR SELECTIVELY PROTECTING METALLIC SURFACES W.R. GRACE & CO.-CONN. (US) 1991-06-27 WO disclosed
US-4822866-A PLASMA RESISTANT PHOTORESISTS; REMOVABLE WITH WEAK ALKALINE SOLUTIONS BASF AKTIENGESELLSCHAFT (DE) 1989-04-18 US disclosed
US-4812542-A PHOTORESISTS, LIGHT-SENSITIVE COATINGS BASF AKTIENGESELLSCHAFT (DE) 1989-03-14 US disclosed
US-4808682-A BLEND WITH OLEFINICALLY UNSATURATED SILICON COMPOUND BASF AKTIENGESELLSCHAFT (DE) 1989-02-28 US disclosed
EP-0277555-A2 Copolymers with 0-nitrocarbinol ester groups, and process for preparing two-layer resists and semiconductor devices BASF Aktiengesellschaft (DE) 1988-08-10 EP disclosed
EP-0271010-A2 Copolymers with 0-nitrocarbinol ester groups, and their use BASF Aktiengesellschaft (DE) 1988-06-15 EP disclosed
US-4632900-A Process for the production of images after electrodeposition of positive photoresist on electrically conductive surface CIBA-GEIGY CORPORATION (US) 1986-12-30 US disclosed
EP-0155231-A2 Image-producing process CIBA-GEIGY AG (CH) 1985-09-18 EP disclosed