Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Water SCHEMBL10534404 | 1.00 | — | — | |
| Water SCHEMBL28274731 | 1.00 | — | — | |
| Water SCHEMBL40570 | 1.00 | — | — | |
| Water SCHEMBL79565 | 1.00 | — | — | |
| Water SCHEMBL21816890 | 1.00 | — | — | |
| Water SCHEMBL333899 | 1.00 | — | — | |
| Water SCHEMBL561304 | 1.00 | — | — | |
| Water SCHEMBL10795519 | 1.00 | — | — | |
| Water SCHEMBL9418317 | 1.00 | — | — | |
| Water SCHEMBL25260041 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-114149102-A | Method for treating landfill leachate | 成都硕特科技股份有限公司 | 2022-03-08 | — | — | CN | claimed |
| CN-111856882-B | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2024-11-29 | — | — | CN | disclosed |
| CN-117894819-A | Preparation method of shielded gate trench MOSFET and shielded gate trench MOSFET | 杭州富芯半导体有限公司 | 2024-04-16 | — | — | CN | disclosed |
| CN-117790577-A | Semiconductor device and method for forming semiconductor device | 矽力杰半导体技术(杭州)有限公司 | 2024-03-29 | — | — | CN | disclosed |
| CN-117790548-A | Triode, layout structure of semiconductor structure, band gap reference circuit and layout structure of band gap reference circuit | 矽力杰半导体技术(杭州)有限公司 | 2024-03-29 | — | — | CN | disclosed |
| CN-117080219-A | Semiconductor device with a semiconductor layer having a plurality of semiconductor layers | 矽力杰半导体技术(杭州)有限公司 | 2023-11-17 | — | — | CN | disclosed |
| CN-116936459-A | Method for forming isolation trench, isolation trench and conductive trench | 矽力杰半导体技术(杭州)有限公司 | 2023-10-24 | — | — | CN | disclosed |
| CN-116864530-A | Semiconductor device with a semiconductor layer having a plurality of semiconductor layers | 矽力杰半导体技术(杭州)有限公司 | 2023-10-10 | — | — | CN | disclosed |
| CN-116799068-A | Semiconductor device and method for manufacturing semiconductor device | 矽力杰半导体技术(杭州)有限公司 | 2023-09-22 | — | — | CN | disclosed |
| CN-111208710-B | Iodine-containing thermosetting silicon-containing material, resist underlayer film forming composition for extreme ultraviolet lithography containing the same, and pattern forming method | 信越化学工业株式会社 | 2023-08-22 | — | — | CN | disclosed |
| CN-114149102-A | Method for treating landfill leachate | 成都硕特科技股份有限公司 | 2022-03-08 | — | — | CN | disclosed |
| CN-113984705-A | Method for measuring oxygen content of aluminum nitride crystal lattice | 北京科技大学 | 2022-01-28 | — | — | CN | disclosed |
| CN-107973601-B | High-performance piezoelectric ceramic material, preparation method thereof and piezoelectric ceramic material product | 盐城工学院 | 2020-12-25 | — | — | CN | disclosed |
| CN-111856882-A | Composition for forming silicon-containing resist underlayer film and pattern forming method | 信越化学工业株式会社 | 2020-10-30 | — | — | CN | disclosed |
| CN-111208710-A | Iodine-containing thermosetting silicon-containing material, resist underlayer film-forming composition for extreme ultraviolet lithography containing the same, and pattern formation method | 信越化学工业株式会社 | 2020-05-29 | — | — | CN | disclosed |
| US-5527624-A | INCLUDING ADDITIVES TO IMPROVE DEAGGLOMERATION OF INORGANIC POWDER AND HELP PREVENT REAGGLOMERATION BY ACTING AS DISPERSANTS, BINDERS AND LUBRICANTS | THE LUBRIZOL CORPORATION (US) | 1996-06-18 | — | — | US | disclosed |
| EP-0550820-A2 | Methods for preparing sintered shapes and compositions used therein | The Lubrizol Corporation (US) | 1993-07-14 | — | — | EP | disclosed |
| US-5122510-A | METHOD FOR PREPARING RARE EARTH-BARIUM-CUPRATE PRE-CERAMIC RESINS AND SUPERCONDUCTIVE MATERIALS PREPARED THEREFROM | GENERAL ATOMICS (US) | 1992-06-16 | — | — | US | disclosed |
| US-5100871-A | Method for preparing rare earth-barium-cuprate pre-ceramic resins and superconductive materials prepared therefrom | GENERAL ATOMICS (US) | 1992-03-31 | — | — | US | disclosed |
| EP-0431813-A1 | Method for preparing rare earth -barium-cuprate pre-ceramic resins and super conductive materials prepared therefrom | GENERAL ATOMICS (US) | 1991-06-12 | — | — | EP | disclosed |