Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 3/20 | 0.37 |
| ▸ | THRB | P10828 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2611541 | 0.88 | TSHR (0.43) | TSHRTHRBALDH1A1 | |
| SCHEMBL11964320 | 0.86 | THRB (0.36) | TSHRTHRB | |
| SCHEMBL14666435 | 0.86 | TSHR (0.40) | TSHRTHRBALDH1A1 | |
| SCHEMBL18785712 | 0.85 | TDP1 (0.32) | — | |
| SCHEMBL12119740 | 0.84 | TSHR (0.40) | TSHRTHRB | |
| SCHEMBL92325 | 0.83 | ALDH1A1 (0.34) | TSHRALDH1A1 | |
| SCHEMBL12119745 | 0.83 | TSHR (0.42) | TSHRTHRB | |
| SCHEMBL12119738 | 0.81 | TSHR (0.32) | TSHR | |
| SCHEMBL12119762 | 0.79 | ELANE (0.38) | ALDH1A1 | |
| SCHEMBL26312792 | 0.79 | TSHR (0.36) | TSHRTHRB |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 95 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10509314-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-12-17 | — | — | US | disclosed |
| US-10457761-B2 | Polymer, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-10-29 | — | — | US | disclosed |
| US-10222696-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-03-05 | — | — | US | disclosed |
| US-10007178-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-26 | — | — | US | disclosed |
| US-10007178-B2 | Positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-26 | — | — | US | disclosed |
| US-9958777-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-05-01 | — | — | US | disclosed |
| US-9958777-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-05-01 | — | — | US | disclosed |
| US-9958776-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-05-01 | — | — | US | disclosed |
| US-9897914-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-20 | — | — | US | disclosed |
| US-9897914-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-02-20 | — | — | US | disclosed |
| US-20140080055-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-03-20 | — | — | US | disclosed |
| US-20140080055-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-03-20 | — | — | US | disclosed |
| US-20140080064-A1 | RESIST PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-03-20 | — | — | US | disclosed |
| US-20130183621-A1 | PATTERN FORMING PROCESS AND RESIST COMPOSTION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-07-18 | — | — | US | disclosed |
| US-20130143162-A1 | RESIST-PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-06-06 | — | — | US | disclosed |
| US-20130143163-A1 | RESIST-PROTECTIVE FILM-FORMING COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-06-06 | — | — | US | disclosed |
| US-20130089820-A1 | RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-11 | — | — | US | disclosed |
| US-20120202153-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-09 | — | — | US | disclosed |
| US-8057985-B2 | Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-11-15 | — | — | US | disclosed |
| US-20100055608-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-03-04 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10509314-B2 | Resist composition and patterning process | SRMS, SLC11A2, PCNA | TSHR 1601/4885THRB 2555/4885ALDH1A1 4490/4885 |
| US-20100055608-A1 | POLYMERIZABLE ANION-CONTAINING SULFONIUM SALT AND POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS | ARSA, ACSL3, RAD54L | TSHR 2645/4885THRB 3542/4885ALDH1A1 2479/4885 |
| US-20130089820-A1 | RESIST TOP COAT COMPOSITION AND PATTERNING PROCESS | PSMB2, PSMC6, PSMB1 | TSHR 1364/4885THRB 323/4885ALDH1A1 3732/4885 |
| US-10222696-B2 | Resist composition and patterning process | SLC11A2, GRN, PGF | TSHR 1975/4885THRB 4449/4885ALDH1A1 4832/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.