Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SMN1; SMN2 | Q16637 | 9/20 | 0.85 |
| ▸ | LMNA | P02545 | 6/20 | 0.85 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.62 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.61 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.58 |
| ▸ | TSHR | P16473 | 1/20 | 0.58 |
| ▸ | HTT | P42858 | 5/20 | 0.57 |
| ▸ | MAPT | P10636 | 3/20 | 0.57 |
| ▸ | STAT3 | P40763 | 1/20 | 0.57 |
| ▸ | RAB9A | P51151 | 3/20 | 0.56 |
| ▸ | GAA | P10253 | 1/20 | 0.56 |
| ▸ | MEN1 | O00255 | 3/20 | 0.56 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.56 |
| ▸ | LTA4H | P09960 | 1/20 | 0.53 |
| ▸ | NPC1 | O15118 | 2/20 | 0.51 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.51 |
| ▸ | NFKB2 | Q00653 | 1/20 | 0.51 |
| ▸ | RELA | Q04206 | 1/20 | 0.51 |
| ▸ | PKM | P14618 | 1/20 | 0.51 |
| ▸ | EGLN3 | Q9H6Z9 | 1/20 | 0.50 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5374402 | 1.00 | SMN1; SMN2 (0.85) | SMN1; SMN2LMNATDP1L3MBTL1ALOX15 | |
| SCHEMBL14423493 | 1.00 | SMN1; SMN2 (0.85) | SMN1; SMN2LMNATDP1L3MBTL1ALOX15 | |
| SCHEMBL501944 | 1.00 | SMN1; SMN2 (0.85) | SMN1; SMN2LMNATDP1L3MBTL1ALOX15 | |
| SCHEMBL502183 | 0.94 | SMN1; SMN2 (0.75) | SMN1; SMN2LMNATDP1L3MBTL1ALOX15 | |
| SCHEMBL352367 | 0.92 | SMN1; SMN2 (1.00) | SMN1; SMN2LMNATDP1L3MBTL1ALOX15 | |
| SCHEMBL29924240 | 0.92 | SMN1; SMN2 (1.00) | SMN1; SMN2LMNATDP1L3MBTL1ALOX15 | |
| SCHEMBL351186 | 0.92 | SMN1; SMN2 (1.00) | SMN1; SMN2LMNATDP1L3MBTL1ALOX15 | |
| SCHEMBL1024585 | 0.91 | SMN1; SMN2 (0.73) | SMN1; SMN2LMNATDP1L3MBTL1ALOX15 | |
| SCHEMBL352045 | 0.91 | SMN1; SMN2 (0.96) | SMN1; SMN2LMNATDP1L3MBTL1ALOX15 | |
| SCHEMBL22307532 | 0.90 | SMN1; SMN2 (0.68) | SMN1; SMN2LMNATDP1L3MBTL1ALOX15 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 121 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-20230205083-A1 | SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-29 | — | — | US | disclosed |
| US-20230152692-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-05-18 | — | — | US | disclosed |
| US-20220127225-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-04-28 | — | — | US | disclosed |
| US-20220004101-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2022-01-06 | — | — | US | disclosed |
| US-20210188770-A1 | ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-06-24 | — | — | US | disclosed |
| US-20210149301-A1 | ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-05-20 | — | — | US | disclosed |
| EP-2482132-B1 | Resist pattern forming process | SHINETSU CHEMICAL CO (JP) | 2019-10-16 | — | — | EP | disclosed |
| US-9310683-B2 | Monomer, polymer, positive resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-04-12 | — | — | US | disclosed |
| US-20080268370-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-10-30 | — | — | US | disclosed |
| US-20080118863-A1 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-22 | — | — | US | disclosed |
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-05-01 | — | — | US | disclosed |
| US-20080008959-A1 | Resin comprising monomers of cyclopentyl- or cyclohexyl (meth)acrylate; hydroxyadamantyl (meth)acrylate; 3,8-epoxy-6-oxabicyclo[3.2.1]octyl (meth)acrylat;, and/or fluoroalkyl (meth)acrylate; ArF lithography; resolution; forms a pattern with high rectangularity | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-20080008960-A1 | Mixture of an adamantane acrylic ester resin which becomes soluble in alkaline developer under action of an acid and sulfonium salt acid generator; microlithography with advantages of resolution, pattern density dependence and mask fidelity; use in precise microfabrication | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |
| US-7252925-B2 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-07 | — | — | US | disclosed |
| US-7252925-B2 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-07 | — | — | US | disclosed |
| US-7252925-B2 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-08-07 | — | — | US | disclosed |
| US-20050095533-A1 | Nitrogen-containing organic compound, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2005-05-05 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20230205083-A1 | SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS | SLC6A9, SLC6A5, REN | SMN1; SMN2 3295/4885LMNA 2393/4885TDP1 4505/4885 |
| US-20080102405-A1 | Nitrogen-containing organic compound, resist composition and patterning process | MDM4, MUS81, NOP2 | SMN1; SMN2 2164/4885LMNA 1522/4885TDP1 3036/4885 |
| US-20220127225-A1 | ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | CACNA1F, SLC6A5, IDUA | SMN1; SMN2 4041/4885LMNA 942/4885TDP1 3589/4885 |
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | IDUA, SLC6A5, SLC6A9 | SMN1; SMN2 3745/4885LMNA 1080/4885TDP1 4190/4885 |
| US-20210188770-A1 | ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | SLC6A5, LIFR, SLC6A9 | SMN1; SMN2 3740/4885LMNA 1042/4885TDP1 4383/4885 |
| US-20210149301-A1 | ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS | IDUA, SLC6A5, SLC6A9 | SMN1; SMN2 3745/4885LMNA 1080/4885TDP1 4190/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.