Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GPR3 | P46089 | 2/20 | 0.43 |
| ▸ | KCNH2 | Q12809 | 7/20 | 0.41 |
| ▸ | ACHE | P22303 | 8/20 | 0.38 |
| ▸ | PTPN1 | P18031 | 1/20 | 0.36 |
| ▸ | PSIP1 | O75475 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL3104582 | 0.86 | GPR3 (0.43) | GPR3KCNH2ACHEPTPN1PSIP1 | |
| Trifluoromethanesulfonic Acid SCHEMBL5858642 | 0.83 | KCNH2 (0.41) | GPR3KCNH2ACHE | |
| Trifluoromethanesulfonic Acid SCHEMBL5856306 | 0.80 | KCNH2 (0.43) | KCNH2ACHE | |
| Trifluoromethanesulfonic Acid SCHEMBL36457 | 0.79 | GPR3 (0.47) | GPR3KCNH2ACHEPTPN1 | |
| Trifluoromethanesulfonic Acid SCHEMBL36165 | 0.79 | GPR3 (0.47) | GPR3KCNH2ACHEPTPN1 | |
| Trifluoromethanesulfonic Acid SCHEMBL5856405 | 0.79 | CA12 (0.46) | KCNH2 | |
| Trifluoromethanesulfonic Acid SCHEMBL31155703 | 0.79 | GPR3 (0.50) | GPR3KCNH2ACHEPTPN1 | |
| Trifluoromethanesulfonic Acid SCHEMBL37032 | 0.79 | GPR3 (0.50) | GPR3KCNH2ACHEPTPN1 | |
| SCHEMBL3207682 | 0.78 | TP53 (0.41) | ACHEPSIP1 | |
| SCHEMBL927741 | 0.77 | CYP3A4 (0.47) | ACHE |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1788436-B1 | Rework process for photoresist film | SHINETSU CHEMICAL CO (JP) | 2013-01-09 | — | — | EP | disclosed |
| US-7868407-B2 | Substrate comprising a lower silicone resin film and an upper silicone resin film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-11 | — | — | US | disclosed |
| US-7642043-B2 | Rework process for photoresist film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-01-05 | — | — | US | disclosed |
| US-7638268-B2 | Rework process for photoresist film | SHIN-ESTU CHEMICAL CO., LTD. (JP) | 2009-12-29 | — | — | US | disclosed |
| EP-1788437-B1 | Rework process for photoresist film | SHINETSU CHEMICAL CO (JP) | 2009-12-23 | — | — | EP | disclosed |
| EP-1801619-B1 | Substrate comprising two antireflective silicone resin layers between an organic layer and a photoresist layer, method for producing the same and patterning process using the same | SHINETSU CHEMICAL CO (JP) | 2008-08-06 | — | — | EP | disclosed |
| US-7303785-B2 | Antireflective film material, and antireflective film and pattern formation method using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-04 | — | — | US | disclosed |
| EP-1801619-A2 | Substrate, method for producing the same, and patterning process using the same | Shin-Etsu Chemical Co., Ltd. (JP) | 2007-06-27 | — | — | EP | disclosed |
| US-20070128886-A1 | Substrate, method for producing the same, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-06-07 | — | — | US | disclosed |
| US-20070117411-A1 | Rework process for photoresist film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-24 | — | — | US | disclosed |
| EP-1788436-A1 | Rework process for photoresist film | Shin-Etsu Chemical Company, Ltd. (JP) | 2007-05-23 | — | — | EP | disclosed |
| EP-1788437-A2 | Rework process for photoresist film | Shinetsu Chemical Co., Ltd. (JP) | 2007-05-23 | — | — | EP | disclosed |
| US-20070111134-A1 | solvent remove the first photoresist film, forming a second photoresist film over the second antireflection silicone resin film which is over the first antireflection silicone resin film; lower cost and provide an excellent resist pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-17 | — | — | US | disclosed |
| US-20040253461-A1 | Antireflective film material, and antireflective film and pattern formation method using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-16 | — | — | US | disclosed |