Predicted protein targets (top 8)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KCNH2 | Q12809 | 7/20 | 0.36 |
| ▸ | ACHE | P22303 | 8/20 | 0.34 |
| ▸ | GPR3 | P46089 | 1/20 | 0.33 |
| ▸ | CA1 | P00915 | 1/20 | 0.30 |
| ▸ | CA2 | P00918 | 1/20 | 0.30 |
| ▸ | CA7 | P43166 | 1/20 | 0.30 |
| ▸ | CA13 | Q8N1Q1 | 1/20 | 0.30 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Trifluoromethanesulfonic Acid SCHEMBL6896985 | 0.84 | KCNH2 (0.36) | KCNH2ACHEGPR3CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL2231643 | 0.82 | KCNH2 (0.35) | KCNH2ACHEGPR3 | |
| Trifluoromethanesulfonic Acid SCHEMBL6550544 | 0.81 | KCNH2 (0.30) | KCNH2 | |
| Trifluoromethanesulfonic Acid SCHEMBL15667318 | 0.78 | KCNH2 (0.38) | KCNH2ACHEGPR3CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL64973 | 0.77 | GPR3 (0.38) | KCNH2ACHEGPR3CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL28255383 | 0.76 | KCNH2 (0.37) | KCNH2ACHEGPR3CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL29171769 | 0.76 | KCNH2 (0.37) | KCNH2ACHEGPR3CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL3962867 | 0.74 | GPR3 (0.39) | ACHEGPR3CA1CA2CA7 | |
| Trifluoromethanesulfonic Acid SCHEMBL1293248 | 0.74 | GPR3 (0.39) | KCNH2ACHEGPR3CA1CA2 | |
| Trifluoromethanesulfonic Acid SCHEMBL27033917 | 0.73 | BBOX1 (0.41) | KCNH2ACHEGPR3EPHX1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260121095-A1 | Advanced Ion Exchange Membranes And Applications Thereof | WILLIAMS RICHARD KENT (US) | 2026-04-30 | — | — | US | disclosed |
| WO-2025128460-A1 | ADVANCED ION EXCHANGE MEMBRANES AND APPLICATIONS THEREOF | WILLIAMS RICHARD KENT (US) | 2025-06-19 | — | — | WO | disclosed |
| CN-109415602-B | 2-cyanoacrylate-based adhesive composition | 东亚合成株式会社 | 2021-05-25 | — | — | CN | disclosed |
| US-10793749-B2 | 2-cyanoacrylate-based adhesive composition | TOAGOSEI CO., LTD. (JP) | 2020-10-06 | — | — | US | disclosed |
| US-20190233679-A1 | 2-CYANOACRYLATE-BASED ADHESIVE COMPOSITION | TOAGOSEI CO., LTD. (JP) | 2019-08-01 | — | — | US | disclosed |
| EP-1788436-B1 | Rework process for photoresist film | SHINETSU CHEMICAL CO (JP) | 2013-01-09 | — | — | EP | disclosed |
| US-7868407-B2 | Substrate comprising a lower silicone resin film and an upper silicone resin film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-11 | — | — | US | disclosed |
| US-7642043-B2 | Rework process for photoresist film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-01-05 | — | — | US | disclosed |
| US-7638268-B2 | Rework process for photoresist film | SHIN-ESTU CHEMICAL CO., LTD. (JP) | 2009-12-29 | — | — | US | disclosed |
| EP-1788437-B1 | Rework process for photoresist film | SHINETSU CHEMICAL CO (JP) | 2009-12-23 | — | — | EP | disclosed |
| US-7303785-B2 | Antireflective film material, and antireflective film and pattern formation method using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-12-04 | — | — | US | disclosed |
| EP-1801619-A2 | Substrate, method for producing the same, and patterning process using the same | Shin-Etsu Chemical Co., Ltd. (JP) | 2007-06-27 | — | — | EP | disclosed |
| EP-1798599-A1 | Antireflection film composition, patterning process and substrate using the same | Shinetsu Chemical Co., Ltd. (JP) | 2007-06-20 | — | — | EP | disclosed |
| US-20070134916-A1 | Antireflection film composition, patterning process and substrate using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-06-14 | — | — | US | disclosed |
| US-20070128886-A1 | Substrate, method for producing the same, and patterning process using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-06-07 | — | — | US | disclosed |
| US-20070117411-A1 | Rework process for photoresist film | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-24 | — | — | US | disclosed |
| EP-1788436-A1 | Rework process for photoresist film | Shin-Etsu Chemical Company, Ltd. (JP) | 2007-05-23 | — | — | EP | disclosed |
| EP-1788437-A2 | Rework process for photoresist film | Shinetsu Chemical Co., Ltd. (JP) | 2007-05-23 | — | — | EP | disclosed |
| US-20070111134-A1 | solvent remove the first photoresist film, forming a second photoresist film over the second antireflection silicone resin film which is over the first antireflection silicone resin film; lower cost and provide an excellent resist pattern | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-05-17 | — | — | US | disclosed |
| US-20040253461-A1 | Antireflective film material, and antireflective film and pattern formation method using the same | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2004-12-16 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260121095-A1 | Advanced Ion Exchange Membranes And Applications Thereof | MYOC, MB, MYOF | KCNH2 644/4885ACHE 1427/4885GPR3 3210/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.