Known targets — ChEMBL curated mechanism
ABCC9ABL1ACEACHEACVR1ADORA1ADORA2AADORA2BADORA3ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB1ADRB2ADRB3AGTR1ALOX5ATP4AATP4BBCRBTKCACNA1ACACNA1BCACNA1CCACNA1DCACNA1ECACNA1FCACNA1GCACNA1HCACNA1ICACNA1SCACNA2D1CACNA2D2CACNA2D3CACNA2D4CACNB1CACNB2CACNB3CACNB4CACNG1CACNG2CACNG3CACNG4CACNG5CACNG6CACNG7CACNG8CALCRLCFBCHRM1CHRM2CHRM3CHRM4CHRM5CHRNA1CHRNB1CHRNDCHRNECHRNGCRBNCUL4ACXCR1CXCR2DDB1DDCDHFRDPP4DRD2DRD3DRD4EGFRERBB2ERBB4ESR1ESR2FDPSFKBP1AFLT1FLT3FLT4GARTGHSRGRIA1GRIA2GRIA3GRIA4GRIK1GRIK2GRIK3GRIK4GRIK5GRIN2AGSK3AGSK3BHDAC1HDAC10HDAC11HDAC2HDAC3HDAC4HDAC5HDAC6HDAC7HDAC8HDAC9HRH1HTR1AHTR1BHTR1DHTR1EHTR1FHTR2AHTR2BHTR2CHTR3AHTR3BHTR3CHTR3DHTR3EHTR4HTR5AHTR6HTR7IDH1IDH2IMPA1ITGA2BITGB3JAK1JAK2JAK3KCNJ11KCNK3KCNK9KDRKITMEN1METMMP1MMP13MMP7MMP8NANOD2NS5bODC1OPG057OPRD1OPRK1OPRM1PPARP1PARP2PDE3APDE3BPDE4APDE4BPDE4CPDE4DPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PKLRPPARDPPATPTGS1PTGS2RBX1ROCK1ROCK2RRM1RRM2RRM2BSCN10ASCN11ASCN1ASCN2ASCN3ASCN4ASCN5ASCN7ASCN8ASCN9ASCNN1ASCNN1BSCNN1GSIGMAR1SLC10A2SLC5A2SLC6A2SLC6A3SLC6A4SLC9A3SYKTACR1THRATHRBTOP1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8TYK2TYMSVDRampCblablaT-3blaT-4blaT-5blaT-6blaUOE-1dacAdacBdacCfolAfolPftsIgyrAgyrBileSmecAmrcAmrcBmrdAparCparEpbp2pbp4pbpApbpFrplArplBrplCrplDrplErplFrplIrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmE2rpmFrpmGrpmG1rpmG2rpmG3rpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUthyAykgMykgO
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Charcoal, Activated SCHEMBL60093 | 0.82 | — | — | |
| Water SCHEMBL8466513 | 0.82 | — | — | |
| Water SCHEMBL8055071 | 0.82 | — | — | |
| Water SCHEMBL11650413 | 0.82 | — | — | |
| Water SCHEMBL2355026 | 0.82 | — | — | |
| Charcoal, Activated SCHEMBL49255 | 0.82 | — | — | |
| Water SCHEMBL2355031 | 0.82 | — | — | |
| Water SCHEMBL5173641 | 0.82 | — | — | |
| Water SCHEMBL251541 | 0.82 | — | — | |
| Charcoal, Activated SCHEMBL1049306 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250191617-A1 | THREE-DIMENSIONAL MEMORY ARRAY AND PREPARATION METHOD THEREOF | PEKING UNIVERSITY (CN) | 2025-06-12 | — | — | US | claimed |
| WO-2024077827-A1 | SEMICONDUCTOR STRUCTURE PREPARATION METHOD AND SEMICONDUCTOR STRUCTURE | 长鑫存储技术有限公司 | 2024-04-18 | — | — | WO | claimed |
| US-20260123445-A1 | SEMICONDUCTOR DEVICE | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2026-04-30 | — | — | US | disclosed |
| US-20250372580-A1 | SEMICONDUCTOR PACKAGE | SAMSUNG ELECTRONICS CO LTD (KR) | 2025-12-04 | — | — | US | disclosed |
| US-20250191617-A1 | THREE-DIMENSIONAL MEMORY ARRAY AND PREPARATION METHOD THEREOF | PEKING UNIVERSITY (CN) | 2025-06-12 | — | — | US | disclosed |
| WO-2025031417-A1 | SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREFOR, AND SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE | 北京大学 | 2025-02-13 | — | — | WO | disclosed |
| WO-2025031407-A1 | PREPARATION METHOD FOR SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE AND DEVICE, AND DEVICE | 北京大学 | 2025-02-13 | — | — | WO | disclosed |
| WO-2024077827-A1 | SEMICONDUCTOR STRUCTURE PREPARATION METHOD AND SEMICONDUCTOR STRUCTURE | 长鑫存储技术有限公司 | 2024-04-18 | — | — | WO | disclosed |
| CN-115064577-A | GaN-based heterojunction transverse Schottky diode and preparation method thereof | 西安电子科技大学 | 2022-09-16 | — | — | CN | disclosed |
| US-11417738-B2 | Semiconductor structure and fabrication method thereof | SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION (CN) | 2022-08-16 | — | — | US | disclosed |
| CN-216350446-U | Carbon silicon thermal analyzer for molten iron | 南京军麟分析仪器有限公司 | 2022-04-19 | — | — | CN | disclosed |
| US-5266398-A | Wear resistance, hardness | KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO (JP) | 1993-11-30 | — | — | US | disclosed |