Predicted protein targets (top 9)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 3/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
| ▸ | HSD11B1 | P28845 | 3/20 | 0.32 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.31 |
| ▸ | MEN1 | O00255 | 3/20 | 0.31 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.31 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.31 |
| ▸ | CYP17A1 | P05093 | 1/20 | 0.31 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL683427 | 0.86 | ALDH1A1 (0.34) | ALDH1A1LMNAHSD11B1KMT2ASMN1; SMN2 | |
| SCHEMBL25619192 | 0.86 | ALDH1A1 (0.31) | ALDH1A1LMNAHSD11B1 | |
| SCHEMBL2631458 | 0.86 | ALDH1A1 (0.31) | ALDH1A1LMNAHSD11B1 | |
| SCHEMBL854491 | 0.85 | ALDH1A1 (0.35) | ALDH1A1CYP17A1CYP19A1 | |
| SCHEMBL17772580 | 0.85 | HSD11B1 (0.42) | ALDH1A1HSD11B1KMT2AMEN1SMN1; SMN2 | |
| SCHEMBL26939426 | 0.85 | HSD11B1 (0.33) | ALDH1A1HSD11B1SMN1; SMN2 | |
| SCHEMBL14539797 | 0.82 | — | — | |
| SCHEMBL19261148 | 0.81 | ALDH1A1 (0.33) | ALDH1A1KMT2ASMN1; SMN2 | |
| SCHEMBL950003 | 0.81 | — | — | |
| SCHEMBL13859538 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 109 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230259029-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2023-08-17 | — | — | US | disclosed |
| WO-2020022088-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, METHOD FOR FORMING PATTERN, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | 富士フイルム株式会社 | 2020-01-30 | — | — | WO | disclosed |
| EP-2756353-B1 | PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE | FUJIFILM CORP (JP) | 2019-05-01 | — | — | EP | disclosed |
| US-10234759-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film and method of forming pattern | FUJIFILM CORPORATION (JP) | 2019-03-19 | — | — | US | disclosed |
| US-9915870-B2 | Pattern forming method, composition kit and resist film, and method for producing electronic device using them, and electronic device | FUJIFILM CORPORATION (JP) | 2018-03-13 | — | — | US | disclosed |
| US-20180011406-A1 | PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOSITION FOR FORMING UPPER LAYER FILM | FUJIFILM CORPORATION (JP) | 2018-01-11 | — | — | US | disclosed |
| US-20170351179-A1 | COMPOSITION FOR FORMING UPPER LAYER FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-12-07 | — | — | US | disclosed |
| US-20170351179-A1 | COMPOSITION FOR FORMING UPPER LAYER FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-12-07 | — | — | US | disclosed |
| US-9810981-B2 | Pattern formation method, etching method, electronic device manufacturing method, and electronic device | FUJIFILM CORPORATION (JP) | 2017-11-07 | — | — | US | disclosed |
| US-9760003-B2 | Pattern forming method and actinic-ray- or radiation-sensitive resin composition | FUJIFILM CORPORATION (JP) | 2017-09-12 | — | — | US | disclosed |
| US-20110236828-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20110236828-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20110223536-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-09-15 | — | — | US | disclosed |
| US-20110104612-A1 | POSITIVE-TYPE RADIATION-SENSITIVE COMPOSITION, AND RESIST PATTERN FORMATION METHOD | JSR CORPORATION (JP) | 2011-05-05 | — | — | US | disclosed |
| US-7914965-B2 | Resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2011-03-29 | — | — | US | disclosed |
| US-20100323305-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2010-12-23 | — | — | US | disclosed |
| US-20100323305-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2010-12-23 | — | — | US | disclosed |
| US-20100297553-A1 | POSITIVE RESIST COMPOSITION AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-11-25 | — | — | US | disclosed |
| US-20100239978-A1 | PHOTOSENSITIVE COMPOSITION, AND PATTERN-FORMING METHOD AND RESIST FILM USING THE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2010-09-23 | — | — | US | disclosed |
| US-20080206668-A1 | NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-08-28 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10234759-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film and method of forming pattern | AFF1, MACF1, RER1 | ALDH1A1 1873/4885LMNA 2462/4885HSD11B1 3536/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.