SCHEMBL9610262

SCHEMBL9610262

CC1C2CC3C1OC(=O)C3C2C

nearest known ligand 0.30

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17857923 1.00 SMN1; SMN2 (0.30) SMN1; SMN2
SCHEMBL16743517 1.00 SMN1; SMN2 (0.30) SMN1; SMN2
SCHEMBL12212884 1.00 SMN1; SMN2 (0.30) SMN1; SMN2
SCHEMBL18872207 1.00 SMN1; SMN2 (0.30) SMN1; SMN2
SCHEMBL18138096 1.00 SMN1; SMN2 (0.30) SMN1; SMN2
SCHEMBL13105192 1.00 SMN1; SMN2 (0.30) SMN1; SMN2
SCHEMBL3464841 1.00 SMN1; SMN2 (0.30) SMN1; SMN2
SCHEMBL18872239 1.00 SMN1; SMN2 (0.30) SMN1; SMN2
SCHEMBL13483868 1.00 SMN1; SMN2 (0.30) SMN1; SMN2
SCHEMBL3408381 1.00 SMN1; SMN2 (0.30) SMN1; SMN2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 77 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20220146931-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2022-05-12 US disclosed
US-11009790-B2 Photoacid generator and photoresist composition including the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2021-05-18 US disclosed
EP-2539316-B1 LATENT ACIDS AND THEIR USE BASF SE (DE) 2019-10-23 EP disclosed
US-10012903-B2 Resist composition and pattern forming process SHIN-ESTU CHEMICAL CO., LTD. (JP) 2018-07-03 US disclosed
US-10005868-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-10007178-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-26 US disclosed
US-20180031967-A1 PHOTOACID GENERATOR AND PHOTORESIST COMPOSITION INCLUDING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2018-02-01 US disclosed
US-20180031967-A1 PHOTOACID GENERATOR AND PHOTORESIST COMPOSITION INCLUDING THE SAME SAMSUNG ELECTRONICS CO., LTD. (KR) 2018-02-01 US disclosed
US-20180024435-A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-01-25 US disclosed
US-20170343898-A1 POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-11-30 US disclosed
US-20100167178-A1 Oxime sulfonates and the use thereof as latent acids YAMATO HITOSHI 2010-07-01 US disclosed
US-20100167178-A1 Oxime sulfonates and the use thereof as latent acids YAMATO HITOSHI 2010-07-01 US disclosed
US-7667050-B2 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-02-23 US disclosed
WO-2009150074-A1 SULFONIUM DERIVATIVES AND THE USE THEREOF AS LATENT ACIDS BASF SE (DE) 2009-12-17 WO disclosed
US-7625689-B2 better line edge roughness in excimer laser lithography; supramolecule ester useful in photoresists e.g. pentaerythritol, tetrakis(3-(methoxymethyloxycarbonyl)cyclohexanecarboxylate) aka PECHOM and other adamantanyl and norbornyl derivatives SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-12-01 US disclosed
US-7625689-B2 better line edge roughness in excimer laser lithography; supramolecule ester useful in photoresists e.g. pentaerythritol, tetrakis(3-(methoxymethyloxycarbonyl)cyclohexanecarboxylate) aka PECHOM and other adamantanyl and norbornyl derivatives SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-12-01 US disclosed
US-20080187860-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2008-08-07 US disclosed
US-20080086014-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-04-10 US disclosed
WO-2007147782-A2 OXIME SULFONATES AND THE USE THEROF AS LATENT ACIDS CIBA HOLDING INC. (CH) 2007-12-27 WO disclosed
US-7232642-B2 Chemically amplified positive resist composition, a haloester derivative and a process for producing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-06-19 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100167178-A1 Oxime sulfonates and the use thereof as latent acids HAO2, SULT2A1, ARSA SMN1; SMN2 3684/4885
US-20180031967-A1 PHOTOACID GENERATOR AND PHOTORESIST COMPOSITION INCLUDING THE SAME PAG1, CCNT1, NAT1 SMN1; SMN2 4847/4885
US-20220146931-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN RER1, FGFR1, CLIC1 SMN1; SMN2 4113/4885
US-20080086014-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same HCN3, SLC26A3, KCNN4 SMN1; SMN2 4703/4885
US-11009790-B2 Photoacid generator and photoresist composition including the same PAG1, CCNT1, NAT1 SMN1; SMN2 4847/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.