SCHEMBL9713660

SCHEMBL9713660

CC(c1ccc(-c2ccccc2)cc1)(c1ccc(O)c(-c2ccccc2)c1)c1ccc(O)c(-c2ccccc2)c1

nearest known ligand 0.59

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR2 Q92731 3/20 0.59
ESR1 P03372 2/20 0.59
BACE1 P56817 2/20 0.50
ALOX5 P09917 2/20 0.46
PELI1 Q96FA3 1/20 0.45
HSD17B2 P37059 2/20 0.44
HSD17B1 P14061 1/20 0.44
ALDH1A1 P00352 2/20 0.44
HPGD P15428 2/20 0.44
HSD17B10 Q99714 2/20 0.44
BCL2L1 Q07817 1/20 0.44
MEN1 O00255 2/20 0.42
KMT2A Q03164 2/20 0.42
KDM4E B2RXH2 1/20 0.42
USP2 O75604 1/20 0.42
LMNA P02545 1/20 0.42
HSP90AA1 P07900 1/20 0.42
GAA P10253 1/20 0.42
MAPT P10636 1/20 0.42
ALOX15 P16050 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23861365 1.00 ESR2 (0.59) ESR2ESR1BACE1ALOX5PELI1
SCHEMBL23861344 0.96 ESR2 (0.62) ESR2ESR1BACE1ALOX5PELI1
SCHEMBL12005093 0.95 ESR2 (0.58) ESR2ESR1BACE1ALOX5PELI1
SCHEMBL30174968 0.95 ESR1 (0.66) ESR2ESR1BACE1ALOX5PELI1
SCHEMBL835714 0.95 ESR1 (0.66) ESR2ESR1BACE1ALOX5PELI1
SCHEMBL22317286 0.92 ESR2 (0.61) ESR2ESR1BACE1ALOX5PELI1
SCHEMBL23082044 0.90 ESR2 (0.56) ESR2ESR1BACE1ALOX5HSD17B2
SCHEMBL9817111 0.90 ESR2 (0.60) ESR2ESR1BACE1ALOX5PELI1
SCHEMBL9713254 0.89 ESR2 (0.54) ESR2ESR1BACE1ALOX5PELI1
SCHEMBL23861362 0.86 ESR2 (0.54) ESR2ESR1ALOX5HSD17B2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11130724-B2 Compound, resin, composition, resist pattern formation method, and circuit pattern formation method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-09-28 US disclosed
US-11067889-B2 Compound, composition, and method for producing same, underlayer film forming material for lithography, composition for underlayer film formation for lithography, and purification method MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-07-20 US disclosed
US-20210070727-A1 COMPOUND, RESIN, COMPOSITION AND PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-03-11 US disclosed
US-20210070685-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-03-11 US disclosed
US-20210070683-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-03-11 US disclosed
US-20210047457-A1 COMPOUND, RESIN, COMPOSITION AND PATTERN FORMATION METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-02-18 US disclosed
US-20210040290-A1 COMPOSITION, METHOD FOR FORMING RESIST PATTERN AND METHOD FOR FORMING INSULATING FILM MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2021-02-11 US disclosed
EP-3747954-A1 COMPOSITION, RESIST-PATTERN FORMING METHOD, AND INSULATING-FILM FORMING METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-12-09 EP disclosed
EP-3744710-A1 COMPOUND, RESIN, COMPOSITION, AND PATTERN FORMING METHOD MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-12-02 EP disclosed
US-10550068-B2 Compound and method for producing same MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2020-02-04 US disclosed
WO-2019142897-A1 COMPOUND, RESIN, COMPOSITION, AND PATTERN FORMING METHOD 三菱瓦斯化学株式会社 2019-07-25 WO disclosed
US-20180201570-A1 NOVEL COMPOUND AND METHOD FOR PRODUCING SAME MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-07-19 US disclosed
US-20180201570-A1 NOVEL COMPOUND AND METHOD FOR PRODUCING SAME MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-07-19 US disclosed
EP-3327505-A1 NOVEL COMPOUND AND METHOD FOR PRODUCING SAME Mitsubishi Gas Chemical Company, Inc. (JP) 2018-05-30 EP disclosed
WO-2018016640-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, AND CIRCUIT PATTERN FORMATION METHOD 三菱瓦斯化学株式会社 2018-01-25 WO disclosed
WO-2018016615-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, AND CIRCUIT PATTERN FORMATION METHOD 三菱瓦斯化学株式会社 2018-01-25 WO disclosed
US-5151531-A DIHYDRIC PHENOLS IDEMITSU KOSAN CO., LTD. (JP) 1992-09-29 US disclosed
EP-0249963-B1 POLYCARBONATES IDEMITSU KOSAN COMPANY LIMITED (JP) 1992-04-22 EP disclosed
US-4892924-A Polycarbonate containing compound from bis(3-phenyl-4-hydroxyphenyl) IDEMITSU KOSAN CO., LTD. (JP) 1990-01-09 US disclosed
EP-0249963-A2 Polycarbonates IDEMITSU KOSAN COMPANY LIMITED (JP) 1987-12-23 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20210070683-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD RER1, RTN4, FEM1B ESR2 2068/4885ESR1 1539/4885BACE1 2882/4885
US-20210070727-A1 COMPOUND, RESIN, COMPOSITION AND PATTERN FORMATION METHOD RDX, RTN4, CROCC ESR2 1492/4885ESR1 1453/4885BACE1 1791/4885
US-11067889-B2 Compound, composition, and method for producing same, underlayer film forming material for lithography, composition for underlayer film formation for lithography, and purification method C5, C9, PRMT9 ESR2 1941/4885ESR1 1606/4885BACE1 1846/4885
US-20210070685-A1 COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD AND CIRCUIT PATTERN FORMATION METHOD RER1, RTN4, FEM1B ESR2 2068/4885ESR1 1539/4885BACE1 2882/4885
US-10550068-B2 Compound and method for producing same C5, CBR1, MTR ESR2 1841/4885ESR1 2037/4885BACE1 2047/4885
US-20180201570-A1 NOVEL COMPOUND AND METHOD FOR PRODUCING SAME C5, CBR3, CBR1 ESR2 1690/4885ESR1 2141/4885BACE1 2357/4885
US-11130724-B2 Compound, resin, composition, resist pattern formation method, and circuit pattern formation method RER1, NBAS, INTS9 ESR2 1033/4885ESR1 713/4885BACE1 3146/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.