Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | DNM1 | Q05193 | 8/20 | 0.44 |
| ▸ | TSHR | P16473 | 2/20 | 0.40 |
| ▸ | MEN1 | O00255 | 1/20 | 0.40 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.40 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.40 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.40 |
| ▸ | GNAI3 | P08754 | 1/20 | 0.40 |
| ▸ | GNAO1 | P09471 | 1/20 | 0.40 |
| ▸ | GNAI1 | P63096 | 1/20 | 0.40 |
| ▸ | PAOX | Q6QHF9 | 2/20 | 0.39 |
| ▸ | CA12 | O43570 | 1/20 | 0.39 |
| ▸ | F13A1 | P00488 | 1/20 | 0.39 |
| ▸ | CA1 | P00915 | 1/20 | 0.39 |
| ▸ | CA2 | P00918 | 1/20 | 0.39 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.39 |
| ▸ | CA3 | P07451 | 1/20 | 0.39 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.39 |
| ▸ | PKM | P14618 | 1/20 | 0.39 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.39 |
| ▸ | CA4 | P22748 | 1/20 | 0.39 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5307045 | 0.98 | DNM1 (0.48) | DNM1TSHRMEN1KMT2AALDH1A1 | |
| SCHEMBL5306410 | 0.98 | DNM1 (0.48) | DNM1TSHRMEN1KMT2AALDH1A1 | |
| SCHEMBL819506 | 0.93 | — | — | |
| SCHEMBL5790232 | 0.88 | ALDH1A1 (0.36) | TSHRMEN1KMT2AALDH1A1EPHX1 | |
| SCHEMBL4201284 | 0.85 | ALDH1A1 (0.39) | TSHRMEN1KMT2AALDH1A1EPHX1 | |
| SCHEMBL4205138 | 0.85 | ALDH1A1 (0.39) | TSHRMEN1KMT2AALDH1A1EPHX1 | |
| SCHEMBL1199958 | 0.83 | ALDH1A1 (0.46) | TSHRMEN1KMT2AALDH1A1EPHX1 | |
| SCHEMBL819835 | 0.83 | — | — | |
| SCHEMBL4209196 | 0.83 | LMNA (0.36) | TSHRMEN1KMT2AALDH1A1LMNA | |
| SCHEMBL974500 | 0.83 | GNAI3 (0.45) | DNM1TSHRMEN1KMT2AALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 65 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3144371-B1 | HYDROXYALKYL SUBSTITUTED SUCCINIMIDES AND FUELS CONTAINING THEM | AFTON CHEMICAL CORP (US) | 2021-10-06 | — | — | EP | claimed |
| CN-106544063-B | The succinimide that hydroxyalkyl replaces and the fuel containing it | 雅富顿化学公司 | 2019-05-03 | — | — | CN | claimed |
| CN-106544063-A | Butanimide and the fuel containing which that hydroxyalkyl replaces | 雅富顿化学公司 | 2017-03-29 | — | — | CN | claimed |
| EP-0576445-B1 | A COMPOSITION FOR USE IN WASHING AND CLEANSING VULCANIZATION MOLDS | SAN MARTINO SPA (IT) | 1996-05-15 | — | — | EP | claimed |
| CN-106544063-B | The succinimide that hydroxyalkyl replaces and the fuel containing it | 雅富顿化学公司 | 2019-05-03 | — | — | CN | disclosed |
| CN-106544063-A | Butanimide and the fuel containing which that hydroxyalkyl replaces | 雅富顿化学公司 | 2017-03-29 | — | — | CN | disclosed |
| US-20150296646-A1 | PROTECTIVE PLATE AND DISPLAY DEVICE | SHARP KABUSHIKI KAISHA (JP) | 2015-10-15 | — | — | US | disclosed |
| US-8790990-B2 | Silica-based film forming material for formation of air gaps, and method for forming air gaps | TOKYO OHKA KOGYO CO., LTD. (JP) | 2014-07-29 | — | — | US | disclosed |
| CN-101016415-B | Composition for forming low refractive index silica-based film | TOKYO OHKA KOGYO CO LTD | 2013-10-16 | — | — | CN | disclosed |
| US-8404786-B2 | Polymer and process for producing the same, composition for forming insulating film, and insulating film and method of forming the same | JSR CORPORATION (JP) | 2013-03-26 | — | — | US | disclosed |
| EP-1705208-B1 | COMPOSITION FOR FORMING INSULATING FILM, METHOD FOR PRODUCING SAME, SILICA INSULATING FILM, AND METHOD FOR FORMING SAME | JSR CORP (JP) | 2013-03-20 | — | — | EP | disclosed |
| US-8318582-B2 | Method of forming a trench isolation | JSR CORPORATION (JP) | 2012-11-27 | — | — | US | disclosed |
| US-6413647-B1 | USEFUL AS INTERLAYER DIELECTRIC FILM IN SEMICONDUCTOR DEVICES; MECHANICAL STRENGTH | JSR CORPORATION (JP) | 2002-07-02 | — | — | US | disclosed |
| US-6410150-B1 | Composition for film formation, method of film formation, and insulating film | JSR CORPORATION (JP) | 2002-06-25 | — | — | US | disclosed |
| US-6410151-B1 | Composition for film formation, method of film formation, and insulating film | JSR CORPORATION (JP) | 2002-06-25 | — | — | US | disclosed |
| US-20010018129-A1 | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2001-08-30 | — | — | US | disclosed |
| EP-1127929-A2 | Composition for film formation, method of film formation, and silica-based film | JSR Corporation (JP) | 2001-08-29 | — | — | EP | disclosed |
| EP-1122770-A2 | Silica-based insulating film and its manufacture | JSR Corporation (JP) | 2001-08-08 | — | — | EP | disclosed |
| EP-1090967-A2 | Composition for film formation, method of film formation, and insulating film | JSR Corporation (JP) | 2001-04-11 | — | — | EP | disclosed |
| EP-1088868-A2 | Composition for film formation, method of film formation, and insulating film | JSR Corporation (JP) | 2001-04-04 | — | — | EP | disclosed |