Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CNR1 | P21554 | 4/20 | 0.43 |
| ▸ | CNR2 | P34972 | 4/20 | 0.43 |
| ▸ | MEN1 | O00255 | 3/20 | 0.39 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.39 |
| ▸ | NOS3 | P29474 | 2/20 | 0.38 |
| ▸ | NOS1 | P29475 | 2/20 | 0.38 |
| ▸ | NOS2 | P35228 | 2/20 | 0.38 |
| ▸ | TSHR | P16473 | 1/20 | 0.38 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.36 |
| ▸ | HTR1B | P28222 | 3/20 | 0.36 |
| ▸ | TLR8 | Q9NR97 | 1/20 | 0.36 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.36 |
| ▸ | HTR1D | P28221 | 1/20 | 0.35 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.35 |
| ▸ | LMNA | P02545 | 1/20 | 0.35 |
| ▸ | MAPT | P10636 | 1/20 | 0.35 |
| ▸ | HTT | P42858 | 1/20 | 0.35 |
| ▸ | ATM | Q13315 | 1/20 | 0.35 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL392406 | 0.93 | CNR1 (0.44) | CNR1CNR2MEN1KMT2ANOS3 | |
| SCHEMBL29402318 | 0.93 | CNR1 (0.44) | CNR1CNR2MEN1KMT2ANOS3 | |
| SCHEMBL268758 | 0.89 | L3MBTL1 (0.43) | MEN1KMT2ANOS3NOS1NOS2 | |
| SCHEMBL29366362 | 0.89 | L3MBTL1 (0.43) | MEN1KMT2ANOS3NOS1NOS2 | |
| SCHEMBL2815501 | 0.88 | NCF1 (0.44) | CNR1CNR2MEN1KMT2ANOS3 | |
| SCHEMBL15476088 | 0.87 | NOS3 (0.37) | CNR1CNR2MEN1KMT2ANOS3 | |
| SCHEMBL15475516 | 0.84 | EGFR (0.34) | NOS3NOS1NOS2CYP2C9L3MBTL1 | |
| SCHEMBL29350011 | 0.81 | IDO1 (0.42) | MEN1KMT2ATSHRCYP2C9L3MBTL1 | |
| SCHEMBL62367 | 0.81 | IDO1 (0.42) | MEN1KMT2ATSHRCYP2C9L3MBTL1 | |
| SCHEMBL7149339 | 0.81 | NCF1 (0.42) | MEN1KMT2AHTR1BL3MBTL1ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-1687678-B1 | CHEMICALLY AMPLIFIED POSITIVE PHOTOSENSITIVE THERMOSETTING RESIN COMPOSITION, METHOD OF FORMING CURED ARTICLE AND USE OF THE METHOD FOR PRODUCING FUNCTIONAL DEVICE | TOKYO OHKA KOGYO CO LTD (JP) | 2013-07-31 | — | — | EP | disclosed |
| US-7871756-B2 | Chemically amplified positive photosensitive thermosetting resin composition, method of forming cured article, and method of producing functional device | TOKYO OHKA KOGYO CO., LTD. (JP) | 2011-01-18 | — | — | US | disclosed |
| US-7816072-B2 | Positive resist composition and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2010-10-19 | — | — | US | disclosed |
| US-20090081590-A1 | NEGATIVE RESIST COMPOSITION AND PROCESS FOR FORMING RESIST PATTERNS | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-03-26 | — | — | US | disclosed |
| US-20090068594-A1 | POSITIVE RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | TOKYO OHKA KOGYO CO., LTD. (JP) | 2009-03-12 | — | — | US | disclosed |
| US-7358028-B2 | Chemically amplified positive photo resist composition and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-04-15 | — | — | US | disclosed |
| US-20080044764-A1 | Chemically Amplified Positive Photosensitive Thermosetting Resin Composition, Method Of Forming Cured Article, And Method Of Producing Functional Device | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-02-21 | — | — | US | disclosed |
| US-7329478-B2 | Chemical amplified positive photo resist composition and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2008-02-12 | — | — | US | disclosed |
| US-20070117045-A1 | CHEMICAL AMPLIFICATION TYPE POSITIVE PHOTORESIST COMPOSITION AND RESIST PATTERN FORMING METHOD | TOKYO OHKA KOGYO CO., LTD. (JP) | 2007-05-24 | — | — | US | disclosed |
| US-7105265-B2 | Method for removing resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2006-09-12 | — | — | US | disclosed |
| US-20060003260-A1 | Chemical amplified positive photo resist composition and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2006-01-05 | — | — | US | disclosed |
| US-20050244740-A1 | Chemically amplified positive photo resist composition and method for forming resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2005-11-03 | — | — | US | disclosed |
| US-20050130055-A1 | Method and removing resist pattern | TOKYO OHKA KOGYO CO., LTD. (JP) | 2005-06-16 | — | — | US | disclosed |
| US-5180653-A | Triazine Compound, Cresol Novolak, Alkoxymethylated Melamine | TOKYO OHKA KOGYO CO., LTD. (JP) | 1993-01-19 | — | — | US | disclosed |
| US-5057397-A | Fine patterning of semiconductor | TOKYO OHKA KOGYO CO., LTD. (JP) | 1991-10-15 | — | — | US | disclosed |