SCHEMBL10040367

SCHEMBL10040367

C=C(C)C(=O)OC12CC3CC(CC(CC(=O)O)(C3)C1)C2

nearest known ligand 0.54

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
POLB P06746 1/20 0.50
ALDH1A1 P00352 6/20 0.47
TSHR P16473 1/20 0.47
GAA P10253 1/20 0.41
LMNA P02545 1/20 0.40
THRB P10828 1/20 0.37
MEN1 O00255 1/20 0.37
KMT2A Q03164 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15964113 0.90 GAA (0.42) POLBALDH1A1TSHRGAATHRB
SCHEMBL18260539 0.86 PKM (0.43) POLBALDH1A1GAATHRBMEN1
SCHEMBL75666 0.86 GAA (0.36) POLBALDH1A1TSHRGAALMNA
SCHEMBL737596 0.83 ALDH1A1 (0.35) ALDH1A1TSHRGAATHRB
SCHEMBL677131 0.83 SCN9A (0.35) POLBALDH1A1TSHRGAATHRB
SCHEMBL16708444 0.83 ALDH1A1 (0.38) POLBALDH1A1TSHRGAATHRB
SCHEMBL17717372 0.82 ALDH1A1 (0.38) POLBALDH1A1TSHRGAATHRB
SCHEMBL18429993 0.81 ALDH1A1 (0.31) ALDH1A1TSHR
SCHEMBL15215840 0.81 POLB (0.31) POLBALDH1A1TSHR
SCHEMBL17921270 0.80 GAA (0.33) ALDH1A1GAATHRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 104 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10457761-B2 Polymer, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-10-29 US disclosed
US-20170226250-A1 POLYMER, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-08-10 US disclosed
US-20170108775-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-20 US disclosed
US-9551932-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-24 US disclosed
US-9551932-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-24 US disclosed
US-9316909-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-19 US disclosed
US-9316909-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-19 US disclosed
US-9213235-B2 Patterning process, resist composition, polymer, and monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-15 US disclosed
US-9213235-B2 Patterning process, resist composition, polymer, and monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-15 US disclosed
US-9201304-B2 Pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-01 US disclosed
US-20120009527-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-12 US disclosed
US-20110236831-A1 ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-29 US disclosed
US-20110236826-A1 PATTERNING PROCESS, RESIST COMPOSITION, AND ACETAL COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-29 US disclosed
US-20110236826-A1 PATTERNING PROCESS, RESIST COMPOSITION, AND ACETAL COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-29 US disclosed
US-20110177462-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-21 US disclosed
US-20110177462-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-21 US disclosed
US-20110014566-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-01-20 US disclosed
US-20110014566-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-01-20 US disclosed
US-20100159392-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-24 US disclosed
US-20100159392-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-06-24 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110236826-A1 PATTERNING PROCESS, RESIST COMPOSITION, AND ACETAL COMPOUND PARG, RAD51, CD38 POLB 215/4885ALDH1A1 549/4885TSHR 4493/4885
US-20110014566-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME XPA, NPPA, ERCC4 POLB 291/4885ALDH1A1 3326/4885TSHR 2807/4885
US-20110236831-A1 ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ADH1A, ADH1C, ADH5 POLB 1444/4885ALDH1A1 6/4885TSHR 4402/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.