SCHEMBL10040372

SCHEMBL10040372

C=C(C)C(=O)Nc1cccc2cccc(O)c12

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 2/20 0.44
MAPT P10636 4/20 0.41
KDM4E B2RXH2 4/20 0.41
NPC1 O15118 4/20 0.41
RAB9A P51151 4/20 0.41
ALDH1A1 P00352 4/20 0.41
HPGD P15428 3/20 0.41
UQCRB P14927 1/20 0.40
BTK Q06187 2/20 0.39
KMT2A Q03164 3/20 0.39
MEN1 O00255 2/20 0.39
ESR2 Q92731 1/20 0.39
AKR1C3 P42330 1/20 0.39
GAA P10253 1/20 0.38
RXFP1 Q9HBX9 1/20 0.38
LMNA P02545 2/20 0.38
HTT P42858 2/20 0.38
HSD17B10 Q99714 2/20 0.38
TP53 P04637 1/20 0.38
TSHR P16473 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13588236 0.85 NPC1 (0.50) TDP1MAPTKDM4ENPC1RAB9A
SCHEMBL3513570 0.83 MAPT (0.57) TDP1MAPTKDM4ENPC1RAB9A
SCHEMBL10040402 0.83 TDP1 (0.44) TDP1MAPTKDM4ENPC1RAB9A
SCHEMBL29366694 0.81 GAA (0.56) TDP1MAPTKDM4ENPC1RAB9A
SCHEMBL224821 0.81 GAA (0.56) TDP1MAPTKDM4ENPC1RAB9A
SCHEMBL15782652 0.79 MAPT (0.44) TDP1MAPTKDM4ENPC1RAB9A
SCHEMBL9359137 0.79 TRPV1 (0.52) TDP1MAPTKDM4ENPC1RAB9A
SCHEMBL15782651 0.77 TDP1 (0.51) TDP1KDM4ENPC1RAB9AALDH1A1
SCHEMBL30369173 0.77 RAB9A (0.61) MAPTKDM4ENPC1RAB9AALDH1A1
SCHEMBL194202 0.77 RAB9A (0.61) MAPTKDM4ENPC1RAB9AALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 100 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9551928-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-9551932-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-24 US disclosed
US-9551932-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-24 US disclosed
US-9213235-B2 Patterning process, resist composition, polymer, and monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-15 US disclosed
US-9213235-B2 Patterning process, resist composition, polymer, and monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-15 US disclosed
US-9201304-B2 Pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-01 US disclosed
US-9201304-B2 Pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-01 US disclosed
US-9182668-B2 Patterning process, resist composition, polymer, and monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-11-10 US disclosed
US-9182668-B2 Patterning process, resist composition, polymer, and monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-11-10 US disclosed
US-9140988-B2 Positive resist composition, monomer, polymer, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-09-22 US disclosed
US-20120288796-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-15 US disclosed
US-20120220112-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-30 US disclosed
US-20120220112-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-30 US disclosed
US-20120009527-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-12 US disclosed
US-20120009527-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-12 US disclosed
US-20110236831-A1 ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-29 US disclosed
US-20110236831-A1 ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-29 US disclosed
US-20110236826-A1 PATTERNING PROCESS, RESIST COMPOSITION, AND ACETAL COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-29 US disclosed
US-20110236826-A1 PATTERNING PROCESS, RESIST COMPOSITION, AND ACETAL COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-29 US disclosed
US-20100255418-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2010-10-07 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100255418-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH RER1, NOC2L, RAD51 TDP1 2002/4885MAPT 1672/4885KDM4E 3848/4885
US-20110236826-A1 PATTERNING PROCESS, RESIST COMPOSITION, AND ACETAL COMPOUND PARG, RAD51, CD38 TDP1 1866/4885MAPT 2319/4885KDM4E 445/4885
US-20110236831-A1 ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ADH1A, ADH1C, ADH5 TDP1 2989/4885MAPT 29/4885KDM4E 1704/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.