SCHEMBL10040402

SCHEMBL10040402

C=C(C)C(=O)Nc1cccc2c(O)ccc(O)c12

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 2/20 0.44
MAPT P10636 2/20 0.44
HPGD P15428 2/20 0.44
APP P05067 1/20 0.44
THRB P10828 1/20 0.44
ALOX15 P16050 1/20 0.44
TSHR P16473 1/20 0.44
CASP1 P29466 1/20 0.44
SNCA P37840 1/20 0.44
RECQL P46063 1/20 0.44
HSD17B10 Q99714 1/20 0.44
NPC1 O15118 3/20 0.40
RAB9A P51151 3/20 0.40
BTK Q06187 2/20 0.39
MEN1 O00255 2/20 0.39
KMT2A Q03164 2/20 0.39
USP2 O75604 1/20 0.39
BLM P54132 1/20 0.39
TRPV1 Q8NER1 2/20 0.38
RXFP1 Q9HBX9 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15782652 0.84 MAPT (0.44) TDP1MAPTHPGDAPPTHRB
SCHEMBL9359137 0.84 TRPV1 (0.52) TDP1MAPTNPC1RAB9AMEN1
SCHEMBL10040372 0.83 TDP1 (0.44) TDP1MAPTHPGDTHRBTSHR
SCHEMBL11737076 0.81 TDP1 (0.51) TDP1MAPTHPGDNPC1RAB9A
SCHEMBL6738921 0.81 IDO1 (0.56) RXFP1IDO1
SCHEMBL10040411 0.80 TDP1 (0.42) TDP1NPC1RAB9ABTKMEN1
SCHEMBL13588235 0.78 NPC1 (0.47) TDP1MAPTHPGDTHRBNPC1
SCHEMBL224821 0.76 GAA (0.56) TDP1MAPTHPGDTSHRHSD17B10
SCHEMBL29366694 0.76 GAA (0.56) TDP1MAPTHPGDTSHRHSD17B10
SCHEMBL10040396 0.76 TDP1 (0.44) TDP1MAPTNPC1RAB9ABTK

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 96 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9551932-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-24 US disclosed
US-9551932-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-01-24 US disclosed
US-9551928-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-9213235-B2 Patterning process, resist composition, polymer, and monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-15 US disclosed
US-9213235-B2 Patterning process, resist composition, polymer, and monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-15 US disclosed
US-9201304-B2 Pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-01 US disclosed
US-9201304-B2 Pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-12-01 US disclosed
US-9182668-B2 Patterning process, resist composition, polymer, and monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-11-10 US disclosed
US-9182668-B2 Patterning process, resist composition, polymer, and monomer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-11-10 US disclosed
US-9122152-B2 Patterning process and resist composition SHIN-ETSU CHEMICALS CO., LTD. (JP) 2015-09-01 US disclosed
US-20120288796-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-15 US disclosed
US-20120220112-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-30 US disclosed
US-20120220112-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-30 US disclosed
US-20120009527-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-12 US disclosed
US-20120009527-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-12 US disclosed
US-20110236831-A1 ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-29 US disclosed
US-20110236831-A1 ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-29 US disclosed
US-20110236826-A1 PATTERNING PROCESS, RESIST COMPOSITION, AND ACETAL COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-29 US disclosed
US-20110236826-A1 PATTERNING PROCESS, RESIST COMPOSITION, AND ACETAL COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-29 US disclosed
US-20100255418-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2010-10-07 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100255418-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH RER1, NOC2L, RAD51 TDP1 2002/4885MAPT 1672/4885HPGD 3178/4885
US-20110236826-A1 PATTERNING PROCESS, RESIST COMPOSITION, AND ACETAL COMPOUND PARG, RAD51, CD38 TDP1 1866/4885MAPT 2319/4885HPGD 917/4885
US-20110236831-A1 ACETAL COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS ADH1A, ADH1C, ADH5 TDP1 2989/4885MAPT 29/4885HPGD 739/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.