Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 7/20 | 0.50 |
| ▸ | GAA | P10253 | 6/20 | 0.50 |
| ▸ | HPGD | P15428 | 3/20 | 0.50 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.50 |
| ▸ | USP2 | O75604 | 2/20 | 0.50 |
| ▸ | PKM | P14618 | 1/20 | 0.50 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.50 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.48 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.48 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.48 |
| ▸ | LMNA | P02545 | 5/20 | 0.46 |
| ▸ | MAPT | P10636 | 4/20 | 0.46 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.46 |
| ▸ | BCL2 | P10415 | 1/20 | 0.46 |
| ▸ | MCL1 | Q07820 | 1/20 | 0.46 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.46 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.46 |
| ▸ | RECQL | P46063 | 1/20 | 0.46 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.44 |
| ▸ | HSP90AB1 | P08238 | 1/20 | 0.44 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5990089 | 0.84 | HSP90AA1 (0.55) | ALDH1A1GAAHPGDHSD17B10USP2 | |
| SCHEMBL5885088 | 0.83 | ALDH1A1 (0.57) | ALDH1A1GAAHPGDHSD17B10USP2 | |
| Toluene SCHEMBL9774676 | 0.81 | CSNK2A1 (0.50) | ALDH1A1GAAHPGDHSD17B10USP2 | |
| SCHEMBL9908617 | 0.80 | ALDH1A1 (0.57) | ALDH1A1GAAHPGDHSD17B10USP2 | |
| SCHEMBL4762195 | 0.79 | ALDH1A1 (0.58) | ALDH1A1HPGDHSD17B10LMNAMAPT | |
| SCHEMBL683263 | 0.79 | HPGD (0.53) | ALDH1A1GAAHPGDHSD17B10USP2 | |
| SCHEMBL13898546 | 0.78 | ALDH1A1 (0.56) | ALDH1A1GAAHPGDHSD17B10USP2 | |
| SCHEMBL13898427 | 0.78 | ALDH1A1 (0.60) | ALDH1A1GAAHPGDHSD17B10USP2 | |
| SCHEMBL30070803 | 0.78 | HNF4A (0.54) | ALDH1A1GAAHPGDHSD17B10USP2 | |
| SCHEMBL4521629 | 0.78 | HNF4A (0.54) | ALDH1A1GAAHPGDHSD17B10USP2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10011576-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, electronic device, and compound | FUJIFILM CORPORATION (JP) | 2018-07-03 | — | — | US | disclosed |
| US-9958775-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blanks including actinic ray-sensitive or radiation-sensitive film, pattern forming method and photomask | FUJIFILM CORPORATION (JP) | 2018-05-01 | — | — | US | disclosed |
| US-20180087010-A1 | PRE-RINSING LIQUID, PRE-RINSING TREATMENT METHOD, AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2018-03-29 | — | — | US | disclosed |
| US-9904168-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2018-02-27 | — | — | US | disclosed |
| US-20170168395-A1 | ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-15 | — | — | US | disclosed |
| US-20170121437-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK | FUJIFILM CORPORATION (JP) | 2017-05-04 | — | — | US | disclosed |
| US-20160320700-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2016-11-03 | — | — | US | disclosed |
| US-20160280675-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, AND COMPOUND | FUJIFILM CORPORATION (JP) | 2016-09-29 | — | — | US | disclosed |
| US-9400430-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, mask blank and method of forming pattern | FUJIFILM CORPORATION (JP) | 2016-07-26 | — | — | US | disclosed |
| US-9285679-B2 | Actinic ray-sensitive or radiation-sensitive composition, and resist film, resist-coated mask blanks, resist pattern forming method and photomask each using the composition | FUJIFILM CORPORATION (JP) | 2016-03-15 | — | — | US | disclosed |
| US-20150086911-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANKS INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD AND PHOTOMASK | FUJIFILM CORPORATION (JP) | 2015-03-26 | — | — | US | disclosed |
| US-20150010855-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANKS, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2015-01-08 | — | — | US | disclosed |
| US-20140242502-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, MASK BLANK AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2014-08-28 | — | — | US | disclosed |
| US-8778593-B2 | Chemical amplification resist composition, and resist film, resist-coated mask blank, resist pattern forming method and photomask each using the composition | FUJIFILM CORPORATION (JP) | 2014-07-15 | — | — | US | disclosed |
| US-20130084518-A1 | NEGATIVE CHEMICAL AMPLIFICATION RESIST COMPOSITION, RESIST FILM, AND, RESIST-COATED MASK BLANKS, METHOD FOR FORMING RESIST PATTERN, AND PHOTOMASK, EACH USING THE SAME | FUJIFILM CORPORATION (JP) | 2013-04-04 | — | — | US | disclosed |
| US-20130029254-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND RESIST FILM, RESIST-COATED MASK BLANK, RESIST PATTERN FORMING METHOD AND PHOTOMASK EACH USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-01-31 | — | — | US | disclosed |
| US-8092978-B2 | Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-8084183-B2 | Resist composition for electron beam, X-ray, or EUV, and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2011-12-27 | — | — | US | disclosed |
| US-20090246685-A1 | POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-10-01 | — | — | US | disclosed |
| US-20090047598-A1 | RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY, OR EUV, AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-02-19 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10011576-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, electronic device, and compound | RARA, RXRA, RARG | ALDH1A1 2784/4885GAA 442/4885HPGD 3668/4885 |
| US-20160280675-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, AND COMPOUND | RARA, RXRA, RARG | ALDH1A1 2784/4885GAA 442/4885HPGD 3668/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.