SCHEMBL10169610

SCHEMBL10169610

Cc1cc([S+](c2ccccc2)c2ccccc2)cc(C)c1OCCCC(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.34

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
SCN8A Q9UQD0 5/20 0.34
MAPT P10636 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
MEN1 O00255 1/20 0.31
KMT2A Q03164 1/20 0.31
ATM Q13315 1/20 0.31
FFAR4 Q5NUL3 2/20 0.31
CYP3A4 P08684 1/20 0.30
KCNH2 Q12809 1/20 0.30
CACNA1C Q13936 1/20 0.30
SCN5A Q14524 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL98127 0.84 SCN8A (0.33) SCN8AMEN1KMT2AATMFFAR4
SCHEMBL10169563 0.80 SCN8A (0.45) SCN8AMAPTMEN1KMT2A
SCHEMBL13399666 0.78 PTPN1 (0.32) MAPTMEN1KMT2AATMFFAR4
SCHEMBL9944508 0.77 SCN8A (0.32) SCN8A
SCHEMBL2601698 0.77 SCN8A (0.33) SCN8AMAPTL3MBTL1MEN1KMT2A
SCHEMBL10170775 0.77 LTA4H (0.46) SCN8AMAPTL3MBTL1MEN1KMT2A
SCHEMBL98712 0.74 THRA (0.47) MEN1KMT2AATMKCNH2
SCHEMBL98608 0.73 KDM4E (0.48) MEN1KMT2AATM
SCHEMBL12603643 0.73 PTPN1 (0.33) MAPTL3MBTL1MEN1KMT2AATM
SCHEMBL13399230 0.73 PTPN1 (0.33) MEN1KMT2AATMFFAR4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9851637-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion control agent TOKYO OHKA KOGYO CO., LTD. (JP) 2017-12-26 US disclosed
US-9846364-B2 Method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-12-19 US disclosed
US-9834696-B2 Undercoat agent and method of forming pattern of layer containing block copolymer TOKYO OHKA KOGYO CO., LTD. (JP) 2017-12-05 US disclosed
US-20170343897-A1 CHEMICAL FOR PHOTOLITHOGRAPHY WITH IMPROVED LIQUID TRANSFER PROPERTY AND RESIST COMPOSITION COMPRISING THE SAME TOKYO OHKA KOGYO CO LTD (JP) 2017-11-30 US disclosed
US-9821338-B2 Method of producing structure containing phase-separated structure utilizing a brush composition comprising PS-PMMA TOKYO OHKA KOGYO., LTD. (JP) 2017-11-21 US disclosed
US-20170285469-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO, CO., LTD. (JP) 2017-10-05 US disclosed
US-9778567-B2 Resist composition, method of forming resist pattern, polymeric compound, compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-03 US disclosed
US-9776208-B2 Brush composition, and method of producing structure containing phase-separated structure TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-03 US disclosed
US-9766541-B2 Positive-type resist composition, method for forming resist pattern, photo-reactive quencher, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-09-19 US disclosed
US-9740105-B2 Resist pattern formation method and resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2017-08-22 US disclosed
US-9581909-B2 Method of trimming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-02-28 US disclosed
US-9557647-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2017-01-31 US disclosed
US-9005872-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-04-14 US disclosed
US-8415082-B2 Resist composition, method of forming resist pattern, compound and method of producing the same, acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2013-04-09 US disclosed
US-8367299-B2 Resist composition, method of forming resist pattern, compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2013-02-05 US disclosed
US-20120214101-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-23 US disclosed
US-8206890-B2 Resist composition, method of forming resist pattern, compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-26 US disclosed
US-20120009521-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2012-01-12 US disclosed
US-20100273105-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2010-10-28 US disclosed
US-20100015552-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2010-01-21 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100273105-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR RER1, GLRA1, GRIN1 SCN8A 934/4885MAPT 4510/4885L3MBTL1 4063/4885
US-20120009521-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR RER1, RFC2, RFC1 SCN8A 1368/4885MAPT 4678/4885L3MBTL1 4253/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.