SCHEMBL98712

SCHEMBL98712

CCCCCCOc1c(C)cc([S+](c2ccccc2)c2ccccc2)cc1C

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
THRA P10827 2/20 0.47
THRB P10828 2/20 0.47
LTA4H P09960 2/20 0.45
S1PR2 O95136 1/20 0.40
S1PR1 P21453 1/20 0.40
S1PR3 Q99500 1/20 0.40
LPAR2 Q9HBW0 1/20 0.40
SOAT1 P35610 1/20 0.39
TSHR P16473 2/20 0.39
PLA2G2A P14555 1/20 0.38
MEN1 O00255 1/20 0.38
KMT2A Q03164 1/20 0.38
ATM Q13315 1/20 0.38
PTPN11 Q06124 1/20 0.37
MLNR O43193 1/20 0.37
NR1I2 O75469 1/20 0.37
ESR1 P03372 1/20 0.37
NR3C1 P04150 1/20 0.37
PGR P06401 1/20 0.37
ADRB2 P07550 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10170775 0.94 LTA4H (0.46) THRATHRBLTA4HTSHRPLA2G2A
SCHEMBL98571 0.82 ALDH1A1 (0.41) LTA4HTSHRALDH1A1
SCHEMBL98608 0.81 KDM4E (0.48) THRATHRBMEN1KMT2AATM
Hydrochloric Acid SCHEMBL29816199 0.80 SCN4A (0.36) MEN1KMT2AATMHTR1AHTR2A
SCHEMBL2601698 0.79 SCN8A (0.33) MEN1KMT2AATMHTR1AHTR2A
SCHEMBL98318 0.78 KDM4E (0.43) THRATHRBMEN1KMT2AESR1
SCHEMBL13052218 0.78 SCN4A (0.38) TSHRMEN1KMT2AATMHTR1A
SCHEMBL2437395 0.78 LTA4H (0.64) LTA4HTSHRMLNRNR1I2ESR1
SCHEMBL9333524 0.78 LTA4H (0.64) LTA4HTSHRMLNRNR1I2ESR1
SCHEMBL482308 0.78 LTA4H (0.64) LTA4HTSHRMLNRNR1I2ESR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 149 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260093177-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-04-02 US disclosed
US-12535737-B2 Material for forming adhesive film, patterning process, and method for forming adhesive film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2026-01-27 US disclosed
EP-4202548-B1 MATERIAL FOR FORMING ADHESIVE FILM, PATTERNING PROCESS, AND METHOD FOR FORMING ADHESIVE FILM SHINETSU CHEMICAL CO (JP) 2025-11-19 EP disclosed
US-12351742-B2 Material for forming adhesive film, patterning process, and method for forming adhesive film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-07-08 US disclosed
US-20250004378-A1 Pattern Forming Method SHIN-ETSU CHEMICAL CO., LTD. (JP) 2025-01-02 US disclosed
US-12174536-B2 Resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-12-24 US disclosed
EP-4474911-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-12-11 EP disclosed
EP-4474912-A2 PATTERN FORMING METHOD Shin-Etsu Chemical Co., Ltd. (JP) 2024-12-11 EP disclosed
US-20240402606-A1 Composition For Forming Resist Underlayer Film And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-12-05 US disclosed
US-20240337944-A1 Resist Underlayer Film Material, Pattern Forming Method, And Method Of Forming Resist Underlayer Film SHIN- ETSU CHEMICAL CO., LTD. (JP) 2024-10-10 US disclosed
US-7569324-B2 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-04 US disclosed
US-7569326-B2 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-08-04 US disclosed
US-20090130597-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2009-05-21 US disclosed
US-7527912-B2 Photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-05-05 US disclosed
EP-2033966-A2 Movel photoacid generators, resist compositons, and patterning processes Shin-Etsu Chemical Co., Ltd. (JP) 2009-03-11 EP disclosed
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS PROXIMAL SYSTEMS CORPORATION 2009-03-05 US disclosed
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-29 US disclosed
US-20080102407-A1 Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-05-01 US disclosed
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-10 US disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20090061358-A1 NOVEL PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS RER1, CRY1, CYP21A2 THRA 1622/4885THRB 2937/4885LTA4H 300/4885
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, HCN4 THRA 1710/4885THRB 1594/4885LTA4H 3662/4885
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST THRA 3472/4885THRB 3341/4885LTA4H 3411/4885
US-20260093177-A1 PATTERNING PROCESS ARFGAP1, ARF1, ARF4 THRA 1132/4885THRB 1399/4885LTA4H 1046/4885
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process RER1, SCO2, ASIC3 THRA 2062/4885THRB 3656/4885LTA4H 754/4885
US-20090130597-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR RER1, ASIC1, ABCC1 THRA 2774/4885THRB 3468/4885LTA4H 3935/4885
US-12535737-B2 Material for forming adhesive film, patterning process, and method for forming adhesive film RAD51, CDH1, SMC2 THRA 1618/4885THRB 2153/4885LTA4H 1504/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.