SCHEMBL98608

SCHEMBL98608

Cc1cc([S+](c2ccccc2)c2ccccc2)cc(C)c1OCCCN(C)C

nearest known ligand 0.50

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 4/20 0.48
ALDH1A1 P00352 3/20 0.48
MEN1 O00255 2/20 0.48
KMT2A Q03164 2/20 0.48
CYP1A2 P05177 1/20 0.48
CYP2D6 P10635 1/20 0.48
LSS P48449 1/20 0.45
SMN1; SMN2 Q16637 1/20 0.44
THRA P10827 1/20 0.43
THRB P10828 1/20 0.43
ATM Q13315 1/20 0.42
TDP1 Q9NUW8 1/20 0.42
HRH1 P35367 1/20 0.41
HRH3 Q9Y5N1 3/20 0.40
HTR1B P28222 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10170775 0.83 LTA4H (0.46) KDM4EALDH1A1MEN1KMT2ACYP1A2
SCHEMBL98712 0.81 THRA (0.47) ALDH1A1MEN1KMT2ATHRATHRB
Hydrochloric Acid SCHEMBL29816199 0.79 SCN4A (0.36) KDM4EMEN1KMT2AATM
SCHEMBL12108091 0.78 LSS (0.68) KDM4EALDH1A1LSSSMN1; SMN2HRH3
SCHEMBL98571 0.78 ALDH1A1 (0.41) KDM4EALDH1A1CYP1A2CYP2D6SMN1; SMN2
SCHEMBL2601698 0.78 SCN8A (0.33) MEN1KMT2AATM
SCHEMBL13052218 0.77 SCN4A (0.38) ALDH1A1MEN1KMT2ACYP1A2CYP2D6
SCHEMBL25658000 0.77 KDM4E (0.48) KDM4EALDH1A1MEN1KMT2ACYP1A2
SCHEMBL13052284 0.75 HTR2A (0.33) KDM4EALDH1A1MEN1KMT2AATM
SCHEMBL10268026 0.74 LSS (0.61) KDM4EALDH1A1LSSSMN1; SMN2HRH3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 187 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2024-01-16 US disclosed
US-11835857-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-12-05 US disclosed
US-11829068-B2 Resist composition, method of forming resist pattern, compound, and resin TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-28 US disclosed
US-11822240-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-11-21 US disclosed
US-11780946-B2 Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-10 US disclosed
US-20230314945-A1 NEGATIVE-TONE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-05 US disclosed
US-11762288-B2 Resist composition, method of forming resist pattern, and acid diffusion-controlling agent TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-19 US disclosed
US-11754922-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-12 US disclosed
US-11747726-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-09-05 US disclosed
US-11709425-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-25 US disclosed
US-20120301829-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2012-11-29 US disclosed
US-20120273924-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-11-01 US disclosed
US-20120270155-A1 COMPOUND, POLYMERIC COMPOUND, ACID GENERATOR, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-10-25 US disclosed
US-20120148955-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NEW COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-14 US disclosed
US-20120148956-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2012-06-14 US disclosed
US-20120058430-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2012-03-08 US disclosed
US-20120015299-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2012-01-19 US disclosed
US-20110287362-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2011-11-24 US disclosed
US-7713679-B2 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO., LTD. 2010-05-11 US disclosed
US-20090104563-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2009-04-23 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (9 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11709425-B2 Resist composition and method of forming resist pattern RER1, RRS1, RXFP4 KDM4E 2379/4885ALDH1A1 3475/4885MEN1 1046/4885
US-20120270155-A1 COMPOUND, POLYMERIC COMPOUND, ACID GENERATOR, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN ASIC1, FGFR1, FGF1 KDM4E 4307/4885ALDH1A1 1026/4885MEN1 137/4885
US-20120015299-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR RER1, ASIC1, ABCC1 KDM4E 4590/4885ALDH1A1 548/4885MEN1 549/4885
US-20110287362-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR RER1, ASIC1, SCO2 KDM4E 4548/4885ALDH1A1 1932/4885MEN1 321/4885
US-20120058430-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR ASIC1, SLC11A2, RER1 KDM4E 4796/4885ALDH1A1 430/4885MEN1 225/4885
US-11874601-B2 Resist composition, method of forming resist pattern, compound, and acid diffusion-controlling agent MRPS23, MRPS22, SLC11A2 KDM4E 3127/4885ALDH1A1 2173/4885MEN1 1142/4885
US-20120148955-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NEW COMPOUND C1R, SLC11A2, RER1 KDM4E 4730/4885ALDH1A1 2007/4885MEN1 225/4885
US-20090104563-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR RER1, ABCC1, GLRA1 KDM4E 4575/4885ALDH1A1 895/4885MEN1 76/4885
US-20120301829-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR SCO2, ASIC1, NOX1 KDM4E 4263/4885ALDH1A1 1048/4885MEN1 541/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.