SCHEMBL2601698

SCHEMBL2601698

Cc1cc([S+](c2ccccc2)c2ccccc2)cc(C)c1OCCC(C)(C)C

nearest known ligand 0.35

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
SCN8A Q9UQD0 3/20 0.33
SCN4A P35499 2/20 0.33
MEN1 O00255 2/20 0.33
KMT2A Q03164 2/20 0.33
ATM Q13315 1/20 0.33
IDO1 P14902 1/20 0.33
HTR2A P28223 2/20 0.32
HTR7 P34969 2/20 0.32
HTR1A P08908 2/20 0.32
ADRA1A P35348 2/20 0.32
HTR6 P50406 1/20 0.32
MCHR1 Q99705 1/20 0.31
SCN2A Q99250 2/20 0.31
ADRA1D P25100 1/20 0.31
ADRA1B P35368 1/20 0.31
MAPT P10636 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
RIPK1 Q13546 1/20 0.30
PPARA Q07869 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10170775 0.81 LTA4H (0.46) SCN8AMEN1KMT2AATMMAPT
Hydrochloric Acid SCHEMBL29816199 0.80 SCN4A (0.36) SCN8ASCN4AMEN1KMT2AATM
SCHEMBL98571 0.79 ALDH1A1 (0.41) SCN4AMAPTL3MBTL1
SCHEMBL98712 0.79 THRA (0.47) MEN1KMT2AATMHTR2AHTR1A
SCHEMBL13052218 0.78 SCN4A (0.38) SCN8ASCN4AMEN1KMT2AATM
SCHEMBL98608 0.78 KDM4E (0.48) MEN1KMT2AATM
SCHEMBL2601695 0.78 PPARA (0.42) MEN1KMT2APPARA
SCHEMBL10169610 0.77 SCN8A (0.34) SCN8AMEN1KMT2AATMMAPT
SCHEMBL13052284 0.77 HTR2A (0.33) SCN8ASCN4AMEN1KMT2AATM
SCHEMBL98127 0.76 SCN8A (0.33) SCN8AMEN1KMT2AATM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9250531-B2 Method of forming resist pattern and negative tone-development resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2016-02-02 US disclosed
US-8980524-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-03-17 US disclosed
US-8956801-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-02-17 US disclosed
US-8795948-B2 Resist composition, method of forming resist pattern and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-08-05 US disclosed
US-8778595-B2 Resist composition, method of forming resist pattern, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-07-15 US disclosed
US-8586281-B2 Positive resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2013-11-19 US disclosed
US-20130252180-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-09-26 US disclosed
US-20130224656-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-08-29 US disclosed
US-20130157201-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-06-20 US disclosed
US-8440385-B2 Positive resist composition, method of forming resist pattern and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-14 US disclosed
US-20130071789-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-03-21 US disclosed
US-20130022911-A1 POLYMER, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-01-24 US disclosed
US-20120100487-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2012-04-26 US disclosed
US-20110244392-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2011-10-06 US disclosed
US-20110236824-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2011-09-29 US disclosed