SCHEMBL10170645

SCHEMBL10170645

O=C(Oc1ccc([S+](c2ccccc2)c2ccccc2)cc1)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.63

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GAA P10253 1/20 0.63
MAPT P10636 1/20 0.63
XBP1 P17861 1/20 0.63
KDM4E B2RXH2 4/20 0.56
TP53 P04637 3/20 0.52
LMNA P02545 1/20 0.52
POLB P06746 1/20 0.52
MEN1 O00255 4/20 0.44
KMT2A Q03164 4/20 0.44
ALDH1A1 P00352 5/20 0.43
HPGD P15428 3/20 0.43
RECQL P46063 1/20 0.42
P2RX7 Q99572 1/20 0.42
USP2 O75604 1/20 0.42
ENPP3 O14638 1/20 0.41
CA2 P00918 1/20 0.41
ENPP1 P22413 1/20 0.41
ENPP2 Q13822 1/20 0.41
CA9 Q16790 1/20 0.41
EPHX2 P34913 2/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1634162 0.86 GAA (0.72) GAAMAPTXBP1KDM4ETP53
SCHEMBL9889029 0.86 MAPT (0.60) GAAMAPTXBP1KDM4ETP53
SCHEMBL14651295 0.84 MAPT (0.86) GAAMAPTXBP1KDM4ETP53
SCHEMBL10170646 0.84 GAA (0.51) GAAMAPTXBP1KDM4ETP53
Trifluoromethanesulfonic Acid SCHEMBL9324835 0.81 MAPT (0.55) GAAMAPTXBP1KDM4ETP53
SCHEMBL98153 0.81 KDM4E (0.49) GAAMAPTXBP1KDM4ETP53
SCHEMBL13148547 0.81 CYP17A1 (0.61) GAAMAPTXBP1KDM4ELMNA
SCHEMBL12376702 0.79 GAA (0.41) GAAMAPTXBP1KDM4ETP53
SCHEMBL13148549 0.79 ALDH1A1 (0.44) MAPTKDM4ELMNAPOLBMEN1
SCHEMBL13148562 0.79 RECQL (0.54) GAAKDM4ELMNAALDH1A1HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 38 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2026100367-A1 RESIST MATERIAL AND PATTERN FORMATION METHOD 東京応化工業株式会社 2026-05-15 WO disclosed
EP-4722811-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2026-04-08 EP disclosed
EP-4722814-A1 PATTERN FORMING METHOD AND PROCESSING LIQUID FOR METAL COMPOUND-CONTAINING FILM TOKYO OHKA KOGYO CO., LTD. (JP) 2026-04-08 EP disclosed
EP-4722810-A1 RESIST MATERIAL, PATTERN FORMING METHOD, AND PATTERNED STRUCTURE Tokyo Ohka Kogyo Co., Ltd. (JP) 2026-04-08 EP disclosed
WO-2025094825-A1 HETEROPOLYOXOMETALATE HAVING MODIFIED LACUNARY SITE, OR MIXTURE THEREOF 東京応化工業株式会社 2025-05-08 WO disclosed
WO-2025094854-A1 METHOD FOR PRODUCING POLYACID SALTS OR MIXTURES THEREOF, AND METHOD FOR REMOVING IMPURITIES 東京応化工業株式会社 2025-05-08 WO disclosed
WO-2025028579-A1 METHOD FOR PRODUCING METATUNGSTATE COMPOUND, METATUNGSTATE COMPOUND FOR RESISTS, AND RESIST MATERIAL 東京応化工業株式会社 2025-02-06 WO disclosed
WO-2024242121-A1 PATTERN FORMING METHOD AND PROCESSING LIQUID FOR METAL COMPOUND-CONTAINING FILM 東京応化工業株式会社 2024-11-28 WO disclosed
WO-2024242120-A1 PATTERN FORMING METHOD AND PROCESSING LIQUID FOR METAL COMPOUND-CONTAINING FILM 東京応化工業株式会社 2024-11-28 WO disclosed
WO-2024242175-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD 東京応化工業株式会社 2024-11-28 WO disclosed
US-8247160-B2 Resist composition, method of forming resist pattern, and novel compound and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2012-08-21 US disclosed
US-8124313-B2 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2012-02-28 US disclosed
US-20110117499-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN USING THE SAME, AND FLUORINE-CONTAINING POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2011-05-19 US disclosed
US-7799505-B2 Photosensitive composition, compound for use in the photosensitive composition and pattern forming method using the photosensitive composition FUJIFILM CORPORATION (JP) 2010-09-21 US disclosed
US-20100233626-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-09-16 US disclosed
US-20100121077-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2010-05-13 US disclosed
US-7682772-B2 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2010-03-23 US disclosed
US-20100015555-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NOVEL COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2010-01-21 US disclosed
US-20090130597-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2009-05-21 US disclosed
US-20080138742-A1 PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2008-06-12 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100121077-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR RER1, ABCC1, SLC11A2 GAA 2807/4885MAPT 4575/4885XBP1 2035/4885
US-20100015555-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NOVEL COMPOUND AND ACID GENERATOR RER1, SLC11A2, FRG1 GAA 2728/4885MAPT 4601/4885XBP1 2635/4885
US-20080138742-A1 PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE PHOTOSENSITIVE COMPOSITION PAH, TRPA1, TYR GAA 2725/4885MAPT 645/4885XBP1 4191/4885
US-20090130597-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR RER1, ASIC1, ABCC1 GAA 3208/4885MAPT 4434/4885XBP1 1062/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.