SCHEMBL98153

SCHEMBL98153

Cc1cc([S+](c2ccccc2)c2ccccc2)cc(C)c1OC(=O)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.49

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 4/20 0.49
GAA P10253 1/20 0.45
MAPT P10636 1/20 0.45
XBP1 P17861 1/20 0.45
MEN1 O00255 5/20 0.44
KMT2A Q03164 5/20 0.44
ALDH1A1 P00352 4/20 0.41
TP53 P04637 3/20 0.41
ATM Q13315 2/20 0.41
LMNA P02545 2/20 0.41
POLB P06746 1/20 0.41
CYP1A2 P05177 1/20 0.41
CYP2D6 P10635 1/20 0.41
CYP2C9 P11712 1/20 0.41
HPGD P15428 1/20 0.41
CYP2C19 P33261 1/20 0.41
RAB9A P51151 2/20 0.40
SMN1; SMN2 Q16637 2/20 0.40
P2RX7 Q99572 2/20 0.40
USP2 O75604 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31564942 0.93 KDM4E (0.44) KDM4EGAAMAPTXBP1MEN1
SCHEMBL98155 0.82 P2RX7 (0.44) MAPTMEN1KMT2AALDH1A1LMNA
SCHEMBL10170645 0.81 GAA (0.63) KDM4EGAAMAPTXBP1MEN1
SCHEMBL23600698 0.80 KDM4E (0.49) KDM4EGAAMAPTXBP1MEN1
SCHEMBL25503519 0.80 KDM4E (0.49) KDM4EGAAMAPTXBP1MEN1
SCHEMBL12149988 0.80 KDM4E (0.40) KDM4EGAAMAPTXBP1MEN1
SCHEMBL10170646 0.80 GAA (0.51) KDM4EGAAMAPTXBP1MEN1
SCHEMBL10186364 0.78 SLC6A3 (0.34) KDM4EGAAMAPTMEN1KMT2A
SCHEMBL9944392 0.75 CYP19A1 (0.39) KDM4EMEN1KMT2AALDH1A1LMNA
SCHEMBL1634162 0.73 GAA (0.72) KDM4EGAAMAPTXBP1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 234 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170293223-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID DIFFUSION CONTROL AGENT TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-12 US disclosed
US-20170285469-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO, CO., LTD. (JP) 2017-10-05 US disclosed
US-20170285469-A1 RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN TOKYO OHKA KOGYO, CO., LTD. (JP) 2017-10-05 US disclosed
US-9778567-B2 Resist composition, method of forming resist pattern, polymeric compound, compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-03 US disclosed
US-9778567-B2 Resist composition, method of forming resist pattern, polymeric compound, compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-03 US disclosed
US-9776208-B2 Brush composition, and method of producing structure containing phase-separated structure TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-03 US disclosed
US-9776208-B2 Brush composition, and method of producing structure containing phase-separated structure TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-03 US disclosed
US-9766541-B2 Positive-type resist composition, method for forming resist pattern, photo-reactive quencher, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-09-19 US disclosed
US-9766541-B2 Positive-type resist composition, method for forming resist pattern, photo-reactive quencher, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-09-19 US disclosed
US-9740105-B2 Resist pattern formation method and resist composition TOKYO OHKA KOGYO CO., LTD. (JP) 2017-08-22 US disclosed
US-20110097667-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2011-04-28 US disclosed
US-20100273105-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2010-10-28 US disclosed
US-20100233626-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-09-16 US disclosed
US-20100121077-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2010-05-13 US disclosed
US-20100081086-A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2010-04-01 US disclosed
US-20100081088-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR INCLUDING THE SAME TOKYO OHKA KOGYO CO., LTD. (JP) 2010-04-01 US disclosed
US-7682772-B2 Resist composition, method of forming resist pattern, novel compound, and acid generator TOKYO OHKA KOGYO CO., LTD. (JP) 2010-03-23 US disclosed
US-20100047724-A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2010-02-25 US disclosed
US-20100015555-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NOVEL COMPOUND AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2010-01-21 US disclosed
US-20090130597-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR TOKYO OHKA KOGYO CO., LTD. (JP) 2009-05-21 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100273105-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR RER1, GLRA1, GRIN1 KDM4E 4402/4885GAA 3385/4885MAPT 4510/4885
US-20100121077-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR RER1, ABCC1, SLC11A2 KDM4E 4273/4885GAA 2807/4885MAPT 4575/4885
US-20100081088-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND AND ACID GENERATOR INCLUDING THE SAME ASIC1, RER1, GRIN1 KDM4E 4708/4885GAA 2280/4885MAPT 3788/4885
US-20100015555-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND NOVEL COMPOUND AND ACID GENERATOR RER1, SLC11A2, FRG1 KDM4E 4727/4885GAA 2728/4885MAPT 4601/4885
US-20090130597-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, NOVEL COMPOUND, AND ACID GENERATOR RER1, ASIC1, ABCC1 KDM4E 4304/4885GAA 3208/4885MAPT 4434/4885
US-20170293223-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND ACID DIFFUSION CONTROL AGENT SLC11A2, DRD1, ZYX KDM4E 4029/4885GAA 1603/4885MAPT 4426/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.