SCHEMBL10172861

SCHEMBL10172861

O=C(OCCS(=O)(=O)O)C1C2CC3CC(C2)CC1C3

nearest known ligand 0.34

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.34
CYP1A2 P05177 1/20 0.34
POLB P06746 1/20 0.34
CYP3A4 P08684 1/20 0.34
CYP2D6 P10635 1/20 0.34
MAPT P10636 1/20 0.34
CYP2C9 P11712 1/20 0.34
CYP2C19 P33261 1/20 0.34
CCR6 P51684 1/20 0.34
GPR55 Q9Y2T6 1/20 0.34
HSD11B1 P28845 2/20 0.33
EPHX2 P34913 2/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10172815 0.90 ALDH1A1 (0.33) ALDH1A1CYP1A2POLBCYP3A4CYP2D6
SCHEMBL10172856 0.89 ALDH1A1 (0.32) ALDH1A1CYP1A2POLBCYP3A4CYP2D6
SCHEMBL12938405 0.82 ALDH1A1 (0.34) ALDH1A1CYP1A2POLBCYP3A4CYP2D6
SCHEMBL8998704 0.82 ALDH1A1 (0.34) ALDH1A1CYP1A2POLBCYP3A4CYP2D6
SCHEMBL16116615 0.80
SCHEMBL18826804 0.77 POLB (0.33) POLB
SCHEMBL20008898 0.77
SCHEMBL11953045 0.77 PPM1B (0.39) ALDH1A1CYP1A2CYP2C9CYP2C19
SCHEMBL18776002 0.77 HSD11B1 (0.46) ALDH1A1HSD11B1
SCHEMBL10172872 0.76 POLB (0.42) ALDH1A1CYP1A2POLBCYP2D6MAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230140810-A1 MATERIAL FOR FORMING ADHESIVE FILM, PATTERNING PROCESS, AND METHOD FOR FORMING ADHESIVE FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-20230140810-A1 MATERIAL FOR FORMING ADHESIVE FILM, PATTERNING PROCESS, AND METHOD FOR FORMING ADHESIVE FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-20230059089-A1 MATERIAL FOR FORMING ADHESIVE FILM, METHOD FOR FORMING ADHESIVE FILM USING THE SAME, AND PATTERNING PROCESS USING MATERIAL FOR FORMING ADHESIVE FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-02-23 US disclosed
US-11366386-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-06-21 US disclosed
US-11231649-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-01-25 US disclosed
US-10844257-B2 Adhesive composition, bio-electrode, and method for manufacturing a bio-electrode SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-11-24 US disclosed
US-10808148-B2 Adhesive composition, bio-electrode, method for manufacturing a bio-electrode, and salt SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-10-20 US disclosed
US-20190354017-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-11-21 US disclosed
US-20190354016-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-11-21 US disclosed
US-20190258160-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-08-22 US disclosed
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-27 US disclosed
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-27 US disclosed
US-9436093-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-09-06 US disclosed
US-20160124312-A1 PATTERN FORMING PROCESS AND SHRINK AGENT SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-05-05 US disclosed
US-9200098-B2 Radiation-sensitive composition and compound JSR CORPORATION (JP) 2015-12-01 US disclosed
US-9200098-B2 Radiation-sensitive composition and compound JSR CORPORATION (JP) 2015-12-01 US disclosed
US-8748076-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-06-10 US disclosed
US-20120288796-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-11-15 US disclosed
US-20120196228-A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-02 US disclosed
US-20120164582-A1 RADIATION-SENSITIVE COMPOSITION AND COMPOUND JSR CORPORATION (JP) 2012-06-28 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS CASR, LIFR, LBR ALDH1A1 4520/4885CYP1A2 4578/4885POLB 1675/4885
US-10808148-B2 Adhesive composition, bio-electrode, method for manufacturing a bio-electrode, and salt SLC9A1, FN1, EPCAM ALDH1A1 755/4885CYP1A2 3372/4885POLB 3560/4885
US-11366386-B2 Patterning process FEM1B, EGLN1, TET1 ALDH1A1 960/4885CYP1A2 1145/4885POLB 1349/4885
US-20190354017-A1 PATTERNING PROCESS FEM1B, EGLN1, TET1 ALDH1A1 960/4885CYP1A2 1145/4885POLB 1349/4885
US-20120164582-A1 RADIATION-SENSITIVE COMPOSITION AND COMPOUND RAD51, RER1, ATP6AP1 ALDH1A1 1300/4885CYP1A2 576/4885POLB 270/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.