SCHEMBL10188366

SCHEMBL10188366

CCOC(=O)CN(CCc1ccc([S+](c2ccccc2)c2ccccc2)cc1)CC(=O)OCC

nearest known ligand 0.44

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
ALOX5 P09917 2/20 0.44
LTA4H P09960 3/20 0.43
CYP4F2 P78329 1/20 0.41
CYP4A11 Q02928 1/20 0.41
SMN1; SMN2 Q16637 2/20 0.41
ABCB1 P08183 1/20 0.41
CA1 P00915 4/20 0.40
CA2 P00918 4/20 0.40
CA4 P22748 2/20 0.40
L3MBTL1 Q9Y468 2/20 0.39
ACHE P22303 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10188290 0.83 LTA4H (0.43) ALOX5LTA4HSMN1; SMN2CA1CA2
SCHEMBL10188346 0.83 LTA4H (0.58) ALOX5LTA4HSMN1; SMN2
SCHEMBL10188309 0.82 LTA4H (0.52) ALOX5LTA4HCYP4F2CYP4A11SMN1; SMN2
SCHEMBL14045656 0.82 ALOX5 (0.52) ALOX5LTA4HSMN1; SMN2ABCB1CA1
SCHEMBL10188289 0.77 KDM4E (0.42) LTA4HSMN1; SMN2
SCHEMBL10188370 0.77 SMN1; SMN2 (0.43) LTA4HSMN1; SMN2CA1CA2
SCHEMBL10188371 0.76 PPARG (0.47) ALOX5LTA4HSMN1; SMN2L3MBTL1
SCHEMBL12108101 0.76 LTB4R (0.36) LTA4HSMN1; SMN2
SCHEMBL1491714 0.75 ALOX5 (0.46) ALOX5LTA4HSMN1; SMN2ABCB1
SCHEMBL20506778 0.75 ALDH1A1 (0.49) ALOX5LTA4HSMN1; SMN2L3MBTL1ACHE

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170168395-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-15 US disclosed
US-20170168395-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-15 US disclosed
US-20160282720-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PHOTOMASK, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-09-29 US disclosed
US-20160280675-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, AND COMPOUND FUJIFILM CORPORATION (JP) 2016-09-29 US disclosed
US-9405197-B2 Pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-08-02 US disclosed
US-20150309408-A1 NEGATIVE RESIST COMPOSITION, RESIST FILM USING SAME, PATTERN FORMING METHOD, AND MASK BLANK PROVIDED WITH RESIST FILM FUJIFILM CORPORATION (JP) 2015-10-29 US disclosed
US-20150160559-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-06-11 US disclosed
US-8951890-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-02-10 US disclosed
US-20130015562-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-17 US disclosed
US-20120164574-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-06-28 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160280675-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, AND COMPOUND RARA, RXRA, RARG ALOX5 798/4885LTA4H 1897/4885CYP4F2 4626/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.