SCHEMBL10239157

SCHEMBL10239157

CN=C(c1ccc(-c2ccccc2)cc1)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 4/20 0.39
MAPT P10636 3/20 0.39
WDR5 P61964 1/20 0.39
KIF11 P52732 1/20 0.37
L3MBTL1 Q9Y468 2/20 0.36
PTPN5 P54829 1/20 0.35
HPGD P15428 2/20 0.34
HDAC1 Q13547 1/20 0.34
HDAC7 Q8WUI4 1/20 0.34
HDAC8 Q9BY41 1/20 0.34
HDAC6 Q9UBN7 1/20 0.34
ALDH1A1 P00352 2/20 0.33
PDCD1 Q15116 1/20 0.33
CD274 Q9NZQ7 1/20 0.33
NPC1 O15118 1/20 0.33
RAB9A P51151 1/20 0.33
CTDSP1 Q9GZU7 1/20 0.33
KDM4E B2RXH2 1/20 0.33
USP2 O75604 1/20 0.33
CYP3A4 P08684 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12994632 1.00 SMN1; SMN2 (0.39) SMN1; SMN2MAPTWDR5KIF11L3MBTL1
SCHEMBL10150703 0.90 SMN1; SMN2 (0.41) SMN1; SMN2MAPTWDR5KIF11L3MBTL1
SCHEMBL10150737 0.88 ALDH1A1 (0.36) MAPTALDH1A1
SCHEMBL12065384 0.85 WDR5 (0.40) SMN1; SMN2MAPTWDR5KIF11L3MBTL1
SCHEMBL12994629 0.83 PARP10 (0.40) SMN1; SMN2ALDH1A1NPC1RAB9A
SCHEMBL10239156 0.83 PARP10 (0.40) SMN1; SMN2ALDH1A1NPC1RAB9A
SCHEMBL10150704 0.82 SMN1; SMN2 (0.44) SMN1; SMN2MAPTWDR5KIF11L3MBTL1
SCHEMBL10150723 0.81 CES2 (0.34) SMN1; SMN2MAPTALDH1A1
SCHEMBL10234624 0.78 SMN1; SMN2 (0.38) SMN1; SMN2MAPTWDR5L3MBTL1PTPN5
SCHEMBL10233779 0.78 SMN1; SMN2 (0.38) SMN1; SMN2MAPTWDR5L3MBTL1PTPN5

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8795942-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-08-05 US disclosed
EP-1710230-B1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHINETSU CHEMICAL CO (JP) 2013-08-14 EP disclosed
US-8349533-B2 Resist lower-layer composition containing thermal acid generator, resist lower layer film-formed substrate, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-01-08 US disclosed
US-20120214100-A1 RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-23 US disclosed
US-8114570-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-02-14 US disclosed
US-8114571-B2 Photoacid generator, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-02-14 US disclosed
US-8030515-B2 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-10-04 US disclosed
US-20110160481-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-06-30 US disclosed
US-7928262-B2 Onium salts, oxime sulfonates and sulfonyloxyimides derived from these sulfonium salts are effective photoacid generators in chemically amplified resist compositions; sensitive to high-energy radiation SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-04-19 US disclosed
US-7919226-B2 Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-04-05 US disclosed
US-20080153030-A1 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-06-26 US disclosed
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-29 US disclosed
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-04-10 US disclosed
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-12-27 US disclosed
US-20070264596-A1 Thermal acid generator, resist undercoat material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-11-15 US disclosed
US-20070099113-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-03 US disclosed
US-20070099112-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-03 US disclosed
US-20070099112-A1 Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-03 US disclosed
EP-1780199-A1 Novel fluorohydroxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-05-02 EP disclosed
EP-1780198-A1 Novel fluorosulfonyloxyalkyl sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process Shin-Etsu Chemical Co., Ltd. (JP) 2007-05-02 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080124656-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, HCN4 SMN1; SMN2 1917/4885MAPT 3800/4885WDR5 2578/4885
US-20070298352-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST SMN1; SMN2 1655/4885MAPT 3968/4885WDR5 2742/4885
US-20080085469-A1 Novel photoacid generators, resist compositions, and patterning process RER1, SCO2, ASIC3 SMN1; SMN2 4267/4885MAPT 4712/4885WDR5 2137/4885
US-20110160481-A1 NOVEL SULFONATE SALTS AND DERIVATIVES, PHOTOACID GENERATORS, RESIST COMPOSITIONS, AND PATTERNING PROCESS HCN3, ASIC3, TST SMN1; SMN2 1655/4885MAPT 3968/4885WDR5 2742/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.