SCHEMBL10272971

SCHEMBL10272971

O=C(NC12CC3CC(CC(C3)C1)C2)C(F)(F)S(=O)(=O)O

nearest known ligand 0.50

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
EPHX2 P34913 10/20 0.50
EPHX1 P07099 4/20 0.50
LMNA P02545 2/20 0.41
ALDH1A1 P00352 3/20 0.41
MEN1 O00255 1/20 0.41
MAPT P10636 1/20 0.41
KMT2A Q03164 1/20 0.41
NPSR1 Q6W5P4 1/20 0.41
THRB P10828 1/20 0.41
HTT P42858 1/20 0.41
SMN1; SMN2 Q16637 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19862487 0.86 EPHX2 (0.50) EPHX2EPHX1LMNAALDH1A1MEN1
SCHEMBL19863276 0.86 EPHX2 (0.50) EPHX2EPHX1LMNAALDH1A1MEN1
SCHEMBL15512063 0.86 EPHX2 (0.50) EPHX2EPHX1LMNAALDH1A1MEN1
SCHEMBL19042385 0.85 EPHX2 (0.48) EPHX2EPHX1LMNAALDH1A1MEN1
SCHEMBL10284599 0.85 ALDH1A1 (0.41) EPHX2EPHX1ALDH1A1
SCHEMBL13102829 0.83 ALDH1A1 (0.34) EPHX2EPHX1ALDH1A1
SCHEMBL10272965 0.82 EPHX2 (0.40) EPHX2EPHX1LMNAALDH1A1
SCHEMBL10284312 0.81 EPHX2 (0.44) EPHX2EPHX1LMNAALDH1A1MEN1
SCHEMBL16604547 0.81 EPHX2 (0.44) EPHX2EPHX1LMNAALDH1A1MEN1
SCHEMBL7353899 0.80 EPHX2 (0.59) EPHX2EPHX1LMNAALDH1A1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11175585-B2 Treatment liquid and treatment liquid housing body FUJIFILM CORPORATION (JP) 2021-11-16 US disclosed
US-10324374-B2 Active light sensitive or radiation sensitive resin composition, active light sensitive or radiation sensitive film, mask blank provided with active light sensitive or radiation sensitive film, pattern forming method, method for manufacturing electronic device, electronic device and novel compound FUJIFILM CORPORATION (JP) 2019-06-18 US disclosed
US-10007180-B2 Negative resist composition, resist film using same, pattern forming method, and mask blank provided with resist film FUJIFILM CORPORATION (JP) 2018-06-26 US disclosed
US-20170168395-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-15 US disclosed
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-04-27 US disclosed
US-9551928-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-9551928-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2017-01-24 US disclosed
US-20160334706-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-11-17 US disclosed
US-20160280675-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, AND COMPOUND FUJIFILM CORPORATION (JP) 2016-09-29 US disclosed
US-9405197-B2 Pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-08-02 US disclosed
US-8541160-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same FUJIFILM CORPORATION (JP) 2013-09-24 US disclosed
US-20130015562-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-17 US disclosed
US-20130011619-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2013-01-10 US disclosed
US-20120207978-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME COMPOSITION FUJIFILM CORPORATION (JP) 2012-08-16 US disclosed
US-8236842-B2 Salt and process for producing acid generator SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2012-08-07 US disclosed
US-8148044-B2 Positive photosensitive composition FUJIFILM CORPORATION (JP) 2012-04-03 US disclosed
US-20110201823-A1 SALT AND PROCESS FOR PRODUCING ACID GENERATOR SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-08-18 US disclosed
US-20100255418-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2010-10-07 US disclosed
US-20100255418-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2010-10-07 US disclosed
US-20100136479-A1 POSITIVE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2010-06-03 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100255418-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH RER1, NOC2L, RAD51 EPHX2 709/4885EPHX1 1304/4885LMNA 607/4885
US-20170115566-A1 RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS CASR, LIFR, LBR EPHX2 1550/4885EPHX1 1968/4885LMNA 482/4885
US-20160280675-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK PROVIDED WITH ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, AND COMPOUND RARA, RXRA, RARG EPHX2 21/4885EPHX1 14/4885LMNA 823/4885
US-10324374-B2 Active light sensitive or radiation sensitive resin composition, active light sensitive or radiation sensitive film, mask blank provided with active light sensitive or radiation sensitive film, pattern forming method, method for manufacturing electronic device, electronic device and novel compound ERCC1, RER1, ECPAS EPHX2 27/4885EPHX1 11/4885LMNA 1061/4885
US-20110201823-A1 SALT AND PROCESS FOR PRODUCING ACID GENERATOR FGFR1, MTX1, RER1 EPHX2 2248/4885EPHX1 2168/4885LMNA 2417/4885
US-20100136479-A1 POSITIVE PHOTOSENSITIVE COMPOSITION AFF1, F12, AFF2 EPHX2 1401/4885EPHX1 2075/4885LMNA 583/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.