SCHEMBL10322932

SCHEMBL10322932

O=S(=O)([O-])C(F)(F)C12CC3CC(CC(C3)C1)C2.c1ccc([S+](c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.33

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.33
LMNA P02545 1/20 0.33
GABBR2 O75899 1/20 0.32
GABRB1 P18505 1/20 0.32
GABRB2 P47870 1/20 0.32
GABBR1 Q9UBS5 1/20 0.32
FAAH O00519 1/20 0.31
SMN1; SMN2 Q16637 2/20 0.31
NPC1 O15118 1/20 0.31
RAB9A P51151 1/20 0.31
KMT2A Q03164 1/20 0.31
FPR1 P21462 1/20 0.31
PTPN1 P18031 1/20 0.31
GPR3 P46089 1/20 0.30
SIGMAR1 Q99720 1/20 0.30
P2RX7 Q99572 2/20 0.30
EPHX2 P34913 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL515601 0.80 P2RX7 (0.37) SMN1; SMN2NPC1RAB9AKMT2AP2RX7
SCHEMBL2570105 0.77 P2RX7 (0.36) ALDH1A1LMNAFAAHSMN1; SMN2NPC1
SCHEMBL4893156 0.76
Carbon Monoxide SCHEMBL544305 0.75 MMP2 (0.31) ALDH1A1LMNASMN1; SMN2
Trifluoromethanesulfonic Acid SCHEMBL31155703 0.74 GPR3 (0.50) ALDH1A1PTPN1GPR3
Trifluoromethanesulfonic Acid SCHEMBL37032 0.74 GPR3 (0.50) ALDH1A1PTPN1GPR3
SCHEMBL242790 0.73 P2RX7 (0.36) ALDH1A1KMT2AP2RX7EPHX2
SCHEMBL544306 0.73 ALDH1A1 (0.43) ALDH1A1LMNAGABBR2GABRB1GABRB2
SCHEMBL2437867 0.72 GPR3 (0.40) ALDH1A1FAAHPTPN1GPR3
Trifluoromethanesulfonic Acid SCHEMBL6118365 0.72 GPR3 (0.48) PTPN1GPR3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10025188-B2 Resist pattern-forming method JSR CORPORATION (JP) 2018-07-17 US disclosed
US-20170322492-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-11-09 US disclosed
US-20160320705-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-11-03 US disclosed
US-9329478-B2 Polysiloxane composition and pattern-forming method JSR CORPORATION (JP) 2016-05-03 US disclosed
US-20160097978-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-04-07 US disclosed
US-20150160556-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2015-06-11 US disclosed
US-8993223-B2 Resist pattern-forming method JSR CORPORATION (JP) 2015-03-31 US disclosed
US-20150050600-A9 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2015-02-19 US disclosed
US-8956807-B2 Method for forming resist pattern, and composition for forming resist underlayer film JSR CORPORATION (JP) 2015-02-17 US disclosed
US-20140134544-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2014-05-15 US disclosed
US-8669042-B2 Resist pattern-forming method JSR CORPORATION (JP) 2014-03-11 US disclosed
EP-2615497-A1 RESIST PATTERN FORMING METHOD JSR Corporation (JP) 2013-07-17 EP disclosed
US-20130130179-A1 POLYSILOXANE COMPOSITION AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-05-23 US disclosed
US-20130101942-A1 METHOD FOR FORMING RESIST PATTERN, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2013-04-25 US disclosed
US-20120183908-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2012-07-19 US disclosed