Potassium Ion

Potassium Ion

SCHEMBL10600320

CCCOS(=O)(=O)[O-].[K+]

nearest known ligand 0.00

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Known targets — ChEMBL curated mechanism

AGTR1DHFRGABBR1GABBR2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGARTNR3C2PBP2XPTGS1PTGS2VKORC1blablaT-3blaT-4blaT-5blaT-6dacAdacBdacCfolAftsImrcAmrcBmrdApbp1apbp1bpbp2apbp2bpbp3polthyA

The experimentally established mechanism targets of Potassium Ion. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6525696 0.94
SCHEMBL17456440 0.94 RECQL (0.60)
SCHEMBL2634707 0.94
Lithium Ion SCHEMBL17456536 0.94
SCHEMBL6862979 0.94 RECQL (0.60)
Water SCHEMBL1134659 0.92 RECQL (0.64)
Methyl Alcohol SCHEMBL27946779 0.90 RECQL (0.56)
Tetramethylammonium Ion SCHEMBL4623396 0.90 RECQL (0.56)
Lithium Ion SCHEMBL28616477 0.85 RECQL (0.52)
Potassium Ion SCHEMBL6534824 0.84 TSHR (0.75)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-107998980-B One kind is containing two selenium anionic surfactants and its preparation method and application 江南大学 2019-08-02 CN disclosed
US-9403960-B2 Irradiated fluoropolymer articles having low leachable fluoride ions ARKEMA INC. (US) 2016-08-02 US disclosed
EP-2714789-B1 IRRADIATED FLUOROPOLYMER ARTICLES HAVING LOW LEACHABLE FLUORIDE IONS ARKEMA INC (US) 2016-02-03 EP disclosed
US-20150329697-A1 IRRADIATED FLUOROPOLYMER ARTICLES HAVING LOW LEACHABLE FLUORIDE IONS ARKEMA INC. (US) 2015-11-19 US disclosed
US-9120912-B2 Irradiated fluoropolymer articles having low leachable fluoride ions ARKEMA INC. (US) 2015-09-01 US disclosed
US-20140148528-A1 IRRADIATED FLUOROPOLYMER ARTICLES HAVING LOW LEACHABLE FLUORIDE IONS ARKEMA INC. 2014-05-29 US disclosed
WO-2012162341-A1 IRRADIATED FLUOROPOLYMER ARTICLES HAVING LOW LEACHABLE FLUORIDE IONS ARKEMA INC. (US) 2012-11-29 WO disclosed
US-4857402-A Magnetic recording medium FUJI PHOTO FILM CO., LTD. (JP) 1989-08-15 US disclosed
US-4214183-A DIELECTRIC CHARGE STORAGE LAYER CONTAINING RUBIDIUM OXIDE OR FRANCIUM OXIDE OWENS-ILLINOIS, INC. (US) 1980-07-22 US disclosed
US-4121133-A Dielectric for multiple gaseous discharge display/memory panel having improved voltage characteristics OWENS-ILLINOIS, INC. (US) 1978-10-17 US disclosed
US-4114064-A MULTIPLE GASEOUS DISCHARGE DISPLAY/MEMORY PANEL HAVING IMPROVED VOLTAGE CHARACTERISTICS OWENS-ILLINOIS, INC. (US) 1978-09-12 US disclosed
US-3932920-A MEMORY PANEL HAVING IMPROVED VOLTAGE CHARACTERISTICS OWENS-ILLINOIS, INC. (US) 1976-01-20 US disclosed