SCHEMBL106266

SCHEMBL106266

CCC(C)(CO)C(=O)OC

nearest known ligand 0.39

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
DGAT1 O75907 1/20 0.39
KDM4E B2RXH2 1/20 0.36
PKM P14618 1/20 0.36
PRKCA P17252 1/20 0.36
ALDH1A1 P00352 3/20 0.33
POLB P06746 1/20 0.33
TSHR P16473 3/20 0.32
TDP1 Q9NUW8 1/20 0.32
HPGD P15428 1/20 0.32
MAPK1 P28482 1/20 0.32
ATM Q13315 1/20 0.32
NPSR1 Q6W5P4 1/20 0.32
L3MBTL1 Q9Y468 1/20 0.32
CYP4F2 P78329 2/20 0.31
CYP4A11 Q02928 2/20 0.31
KCNN4 O15554 1/20 0.31
CA1 P00915 1/20 0.30
CA2 P00918 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2475483 0.87 DGAT1 (0.44) DGAT1PKMALDH1A1POLBTSHR
SCHEMBL769720 0.87 DGAT1 (0.44) DGAT1KDM4EPKMPRKCAALDH1A1
SCHEMBL13224508 0.86 KDM4E (0.33) DGAT1KDM4EPKMPRKCA
SCHEMBL13224509 0.86 KDM4E (0.33) DGAT1KDM4EPKMPRKCA
SCHEMBL16705046 0.82 DGAT1 (0.41) DGAT1PKMALDH1A1POLBTSHR
SCHEMBL28875454 0.81 PRKCA (0.42) KDM4EPKMPRKCAMAPK1CYP4F2
SCHEMBL683196 0.81 DGAT1 (0.41) DGAT1KDM4EPKMPRKCATDP1
SCHEMBL31626895 0.81 DGAT1 (0.37) DGAT1KDM4EPKMPRKCAALDH1A1
SCHEMBL9699298 0.81 DGAT1 (0.37) DGAT1KDM4EPKMPRKCAALDH1A1
SCHEMBL12897713 0.81 PKM (0.47) KDM4EPKMPRKCAALDH1A1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 577 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12032290-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-20230350290-A1 PATTERN FORMING METHOD, KIT, AND RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2023-11-02 US disclosed
US-20230333478-A1 PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND KIT FUJIFILM CORPORATION (JP) 2023-10-19 US disclosed
US-11747727-B2 Chemical liquid, chemical liquid storage body, pattern forming method, and kit FUJIFILM CORPORATION (JP) 2023-09-05 US disclosed
US-11733611-B2 Pattern forming method, method for producing electronic device, and kit FUJIFILM CORPORATION (JP) 2023-08-22 US disclosed
US-20230229078-A1 CHEMICAL LIQUID SUPPLY METHOD AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2023-07-20 US disclosed
US-11703758-B2 Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-07-18 US disclosed
US-20230221644-A1 METHOD FOR PRODUCING COMPOSITION FOR FORMING NON-PHOTOSENSITIVE UPPER LAYER FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-07-13 US disclosed
US-11693321-B2 Treatment liquid for manufacturing semiconductor, storage container storing treatment liquid for manufacturing semiconductor, pattern forming method, and method of manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-07-04 US disclosed
US-20070077519-A1 Pattern forming method and resist composition used therefor FUJI PHOTO FILM CO., LTD. 2007-04-05 US disclosed
US-20070072118-A1 Positive photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-29 US disclosed
US-20070065752-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-22 US disclosed
US-20070059639-A1 Positive resist composition and pattern-forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-15 US disclosed
US-20070054217-A1 Positive photosensitive composition and pattern-forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-08 US disclosed
US-20070048663-A1 Photopolymerizable photosensitive lithographic printing plate FUJI PHOTO FILM CO., LTD. 2007-03-01 US disclosed
US-20070042291-A1 Positive resist composition and a pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
US-20070031757-A1 Positive photosensitive composition and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2007-02-08 US disclosed
US-20070026343-A1 Chemical amplification-type resist composition and production process thereof FUJI PHOTO FILM CO., LTD. 2007-02-01 US disclosed
US-4837357-A Preparation of 2,2-disubstituted 3-chloropropionic esters BASF AKTIENGESELLSCHAFT (DE) 1989-06-06 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12032288-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device RER1, COL1A1, RAD51 DGAT1 2362/4885KDM4E 3311/4885PKM 3853/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.