SCHEMBL107824

SCHEMBL107824

CCC(C)(C)C(=O)ON1C(=O)C2C3CCC(C3)C2C1=O

nearest known ligand 0.44

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
L3MBTL1 Q9Y468 3/20 0.44
KMT2A Q03164 3/20 0.41
ALDH1A1 P00352 6/20 0.38
GAA P10253 3/20 0.38
MEN1 O00255 2/20 0.38
CYP1A2 P05177 2/20 0.38
CYP2C19 P33261 2/20 0.38
CYP3A4 P08684 1/20 0.38
CYP2C9 P11712 1/20 0.38
SMN1; SMN2 Q16637 3/20 0.37
KDM4E B2RXH2 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15172849 0.87 L3MBTL1 (0.43) L3MBTL1KMT2AALDH1A1GAAMEN1
SCHEMBL25734938 0.84 L3MBTL1 (0.45) L3MBTL1KMT2AALDH1A1GAAMEN1
SCHEMBL13829346 0.81 ALDH1A1 (0.45) L3MBTL1KMT2AALDH1A1MEN1CYP1A2
SCHEMBL13145960 0.79 L3MBTL1 (0.42) L3MBTL1KMT2AALDH1A1GAAMEN1
SCHEMBL26085037 0.79 CCR2 (0.37) KMT2AALDH1A1MEN1SMN1; SMN2KDM4E
SCHEMBL19880316 0.77 L3MBTL1 (0.40) L3MBTL1KMT2AALDH1A1GAAMEN1
SCHEMBL23974809 0.76 KMT2A (0.44) L3MBTL1KMT2AALDH1A1GAAMEN1
SCHEMBL8244205 0.76 KMT2A (0.44) L3MBTL1KMT2AALDH1A1GAAMEN1
SCHEMBL26085036 0.75 LMNA (0.38) L3MBTL1KMT2AALDH1A1GAACYP3A4
SCHEMBL12014820 0.75 L3MBTL1 (0.34) L3MBTL1KMT2AALDH1A1MEN1CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 223 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11780946-B2 Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-10-10 US disclosed
US-9897922-B2 Method of forming pattern and developer for use in the method FUJIFILM CORPORATION (JP) 2018-02-20 US disclosed
US-9810981-B2 Pattern formation method, etching method, electronic device manufacturing method, and electronic device FUJIFILM CORPORATION (JP) 2017-11-07 US disclosed
US-9760003-B2 Pattern forming method and actinic-ray- or radiation-sensitive resin composition FUJIFILM CORPORATION (JP) 2017-09-12 US disclosed
US-9760003-B2 Pattern forming method and actinic-ray- or radiation-sensitive resin composition FUJIFILM CORPORATION (JP) 2017-09-12 US disclosed
US-9709892-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the same FUJIFILM CORPORATION (JP) 2017-07-18 US disclosed
US-20170184973-A1 ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-06-29 US disclosed
US-20170146908-A1 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME FUJIFILM CORPORATION (JP) 2017-05-25 US disclosed
US-20170115571-A1 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME FUJIFILM CORPORATION (JP) 2017-04-27 US disclosed
US-20170102618-A1 METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2017-04-13 US disclosed
US-20090239176-A1 RESIN FOR HYDROPHOBITIZING RESIST SURFACE, METHOD FOR MANUFACTURING THE RESIN, AND POSITIVE RESIST COMPOSITION CONTAINING THE RESIN FUJIFILM CORPORATION (JP) 2009-09-24 US disclosed
US-20090042147-A1 METHOD OF FORMING PATTERNS FUJIFILM CORPORATION (JP) 2009-02-12 US disclosed
US-20090035692-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING MEHTOD FUJIFILM CORPORATION (JP) 2009-02-05 US disclosed
US-20090023096-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2009-01-22 US disclosed
US-20090017400-A1 PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2009-01-15 US disclosed
US-20090011362-A1 PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2009-01-08 US disclosed
US-20080318171-A1 METHOD OF FORMING PATTERNS FUJIFILM CORPORATION (JP) 2008-12-25 US disclosed
US-20080241737-A1 RESIST COMPOSITION AND PATTERN-FORMING METHOD USING SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
US-20080227025-A1 Localized on resist film; peak area of a high molecular weight; flowability of immersion liquid in patterning by exposure; prevention of coating and development defects; resin has perfluoroalkyl, fluorinated alcohol, alkylsilyl structure, cyclic siloxane, sulfonimido and/or bis(carbonyl)methylene groups FUJIFILM CORPORATION (JP) 2008-09-18 US disclosed
US-20080206668-A1 NEGATIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-08-28 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20170184973-A1 ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, METHOD OF PRODUCING ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, STORAGE CONTAINER OF ORGANIC TREATMENT LIQUID FOR PATTERNING RESIST FILM, PATTERN FORMING METHOD USING THE SAME, AND METHOD OF PRODUCING ELECTRONIC DEVICE MYB, NCL, SMYD2 L3MBTL1 1109/4885KMT2A 17/4885ALDH1A1 4242/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.