Known targets — ChEMBL curated mechanism
CACNA1CCACNA1DCACNA1FCACNA1SDPP4HTR1BHTR1D
The experimentally established mechanism targets of Benzoic Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA2 | P00918 | 11/20 | 0.70 |
| ▸ | CA4 | P22748 | 2/20 | 0.70 |
| ▸ | CES2 | O00748 | 3/20 | 0.44 |
| ▸ | CES1 | P23141 | 3/20 | 0.44 |
| ▸ | TSHR | P16473 | 2/20 | 0.44 |
| ▸ | DAO | P14920 | 1/20 | 0.44 |
| ▸ | NAPRT | Q6XQN6 | 1/20 | 0.44 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.44 |
| ▸ | CA1 | P00915 | 10/20 | 0.43 |
| ▸ | L3MBTL1 | Q9Y468 | 3/20 | 0.41 |
| ▸ | MAPT | P10636 | 2/20 | 0.41 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.41 |
| ▸ | POLB | P06746 | 1/20 | 0.41 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.41 |
| ▸ | PARP1 | P09874 | 1/20 | 0.41 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.41 |
| ▸ | RECQL | P46063 | 1/20 | 0.41 |
| ▸ | BLM | P54132 | 1/20 | 0.41 |
| ▸ | PMP22 | Q01453 | 1/20 | 0.41 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.41 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Terephthalic Acid SCHEMBL107592 | 0.95 | CA2 (0.62) | CA2CA4CES2CES1CA1 | |
| Isophthalic Acid SCHEMBL106417 | 0.90 | CA2 (0.56) | CA2CA4CES2CES1TSHR | |
| Terephthalic Acid SCHEMBL107594 | 0.90 | CA2 (0.56) | CA2CA4CES2CES1TSHR | |
| Benzoic Acid SCHEMBL31501033 | 0.89 | CA2 (0.59) | CA2CA4CES2CES1TSHR | |
| 4-Methylbenzoic Acid SCHEMBL106217 | 0.86 | CA2 (0.52) | CA2CA4CES2CES1ALDH1A1 | |
| SCHEMBL4961628 | 0.86 | CA2 (0.67) | CA2CA4CES2CES1CA1 | |
| Bicarbonate SCHEMBL105292 | 0.85 | CA2 (0.46) | CA2CA4CES2CES1TSHR | |
| Bicarbonate SCHEMBL105290 | 0.85 | CA2 (0.46) | CA2CA4CES2CES1TSHR | |
| Benzoic Acid SCHEMBL11789341 | 0.85 | CA2 (0.94) | CA2CA4CES2CES1TSHR | |
| Isophthalic Acid SCHEMBL106419 | 0.85 | CA2 (0.50) | CA2CA4CES2CES1TSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 196 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-04-30 | — | — | US | disclosed |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-12 | — | — | US | disclosed |
| EP-4692941-A2 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-02-11 | — | — | EP | disclosed |
| US-12493243-B2 | Film-forming composition | NISSAN CHEMICAL CORPORATION (JP) | 2025-12-09 | — | — | US | disclosed |
| EP-4621486-A2 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-24 | — | — | EP | disclosed |
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-09-18 | — | — | US | disclosed |
| EP-4592299-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-30 | — | — | EP | disclosed |
| US-12372875-B2 | Composition for resist pattern metallization process | NISSAN CHEMICAL CORPORATION (JP) | 2025-07-29 | — | — | US | disclosed |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-07-24 | — | — | US | disclosed |
| US-12332565-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2025-06-17 | — | — | US | disclosed |
| US-6924323-B2 | Sulfonium salt compound | WAKO PURE CHEMICAL INDUSTRIES, LTD. (JP) | 2005-08-02 | — | — | US | disclosed |
| US-20050043490-A1 | Polymerizable compounds and compositions | KLEE JOACHIM E (DE) | 2005-02-24 | — | — | US | disclosed |
| US-20040033434-A1 | Sulfonium salt compound | FUJIFILM WAKO PURE CHEMICAL CORPORATION (JP) | 2004-02-19 | — | — | US | disclosed |
| US-6692883-B2 | GENERATING ACID; ADJUSTMENT SOLUBILITY IN ALKLAINE DEVELOPER | FUJI PHOTO FILM CO., LTD. (JP) | 2004-02-17 | — | — | US | disclosed |
| US-6680161-B2 | Lithographic printing plate precursor | FUJI PHOTO FILM CO., LTD. (JP) | 2004-01-20 | — | — | US | disclosed |
| EP-1371500-A1 | Lithographic printing plate precursor | FUJI PHOTO FILM CO., LTD. (JP) | 2003-12-17 | — | — | EP | disclosed |
| CN-1449379-A | Sulfonium salt compound | WAKO PURE CHEM IND LTD (JP) | 2003-10-15 | — | — | CN | disclosed |
| EP-1314725-A1 | SULFONIUM SALT COMPOUND | Wako Pure Chemical Industries, Ltd. (JP) | 2003-05-28 | — | — | EP | disclosed |
| US-20020012866-A1 | Positive photoresist composition | FUJIFILM CORPORATION (JP) | 2002-01-31 | — | — | US | disclosed |
| EP-1136281-A1 | Lithographic printing plate precursor | FUJI PHOTO FILM CO., LTD. (JP) | 2001-09-26 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20250289931-A1 | POLYVALENT AMMONIUM SALT COMPOUND, COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | ASH2L, PUF60, IDUA | CA2 1064/4885CA4 749/4885CES2 4176/4885 |
| US-12332565-B2 | Thermosetting iodine- and silicon-containing material, composition containing the material for forming resist underlayer film for EUV lithography, and patterning process | RPS4X, SIK3, MLX | CA2 2255/4885CA4 1589/4885CES2 2254/4885 |
| US-20260118767-A1 | REVERSE PATTERNING PROCESS | EFNA1, EPHA4, ETV6 | CA2 2902/4885CA4 281/4885CES2 936/4885 |
| US-20260044081-A1 | COMPOSITION FOR FORMING SILICON-CONTAINING RESIST FILM AND PATTERNING PROCESS | SMC1A, SPOUT1, LBR | CA2 2105/4885CA4 1681/4885CES2 2647/4885 |
| US-20250237953-A1 | SILICON-CONTAINING SULFONIUM SALT COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING RESIST UNDERLAYER FILM, AND PATTERNING PROCESS | SMURF1, OSR1, SIK1 | CA2 972/4885CA4 440/4885CES2 4119/4885 |
| US-20040033434-A1 | Sulfonium salt compound | SPIN1, RER1, SPIN2B | CA2 1769/4885CA4 2105/4885CES2 3633/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.