Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MEN1 | O00255 | 2/20 | 0.45 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.45 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.45 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.45 |
| ▸ | HTT | P42858 | 1/20 | 0.45 |
| ▸ | HSP90AA1 | P07900 | 2/20 | 0.44 |
| ▸ | CKS1B | P61024 | 1/20 | 0.44 |
| ▸ | SKP1 | P63208 | 1/20 | 0.44 |
| ▸ | SKP2 | Q13309 | 1/20 | 0.44 |
| ▸ | RAB9A | P51151 | 4/20 | 0.40 |
| ▸ | CYP19A1 | P11511 | 4/20 | 0.40 |
| ▸ | LMNA | P02545 | 2/20 | 0.40 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.40 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.40 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.40 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.40 |
| ▸ | HTR3E | A5X5Y0 | 1/20 | 0.40 |
| ▸ | NR1I2 | O75469 | 1/20 | 0.40 |
| ▸ | HTR3B | O95264 | 1/20 | 0.40 |
| ▸ | HTR3A | P46098 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27255743 | 0.88 | NPSR1 (0.47) | MEN1KMT2AALDH1A1NPSR1HTT | |
| SCHEMBL685883 | 0.85 | ALDH1A1 (0.56) | MEN1KMT2AALDH1A1NPSR1HTT | |
| SCHEMBL27255740 | 0.84 | RAB9A (0.54) | MEN1KMT2AALDH1A1NPSR1HTT | |
| SCHEMBL27255745 | 0.82 | HSP90AA1 (0.34) | MEN1KMT2AALDH1A1NPSR1HTT | |
| SCHEMBL8129733 | 0.81 | HSP90AA1 (0.48) | MEN1KMT2AALDH1A1NPSR1HSP90AA1 | |
| SCHEMBL28462445 | 0.80 | HSP90AA1 (0.50) | HSP90AA1CKS1BSKP1SKP2CYP19A1 | |
| SCHEMBL19321857 | 0.80 | HSP90AA1 (0.47) | MEN1KMT2AALDH1A1NPSR1HTT | |
| SCHEMBL862390 | 0.80 | LCK (0.43) | MEN1KMT2AALDH1A1NPSR1HTT | |
| SCHEMBL107242 | 0.79 | CYP17A1 (0.42) | MEN1KMT2AALDH1A1NPSR1HTT | |
| SCHEMBL16772260 | 0.76 | ALDH1A1 (0.48) | MEN1KMT2AALDH1A1NPSR1HTT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 62 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240219830-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2024-07-04 | — | — | US | disclosed |
| US-20240210824-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2024-06-27 | — | — | US | disclosed |
| US-20170285482-A1 | ORGANIC PROCESSING LIQUID AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2017-10-05 | — | — | US | disclosed |
| US-20170176862-A1 | PATTERN FORMING METHOD, COMPOSITION FOR FORMING PROTECTIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-22 | — | — | US | disclosed |
| US-20170075222-A1 | PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-03-16 | — | — | US | disclosed |
| US-9563121-B2 | Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition | FUJIFILM CORPORATION (JP) | 2017-02-07 | — | — | US | disclosed |
| US-9541831-B2 | Positive resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2017-01-10 | — | — | US | disclosed |
| US-20160349619-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2016-12-01 | — | — | US | disclosed |
| US-9465298-B2 | Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method | FUJIFILM CORPORATION (JP) | 2016-10-11 | — | — | US | disclosed |
| US-9458343-B2 | Method of forming patterns | FUJIFILM CORPORATION (JP) | 2016-10-04 | — | — | US | disclosed |
| US-20120003583-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-01-05 | — | — | US | disclosed |
| US-8088557-B2 | Method of forming patterns | FUJIFILM CORPORATION (JP) | 2012-01-03 | — | — | US | disclosed |
| US-20110318691-A1 | RESIST COMPOSITION FOR SEMICONDUCTOR, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-12-29 | — | — | US | disclosed |
| US-20110250543-A1 | PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2011-10-13 | — | — | US | disclosed |
| US-20110229832-A1 | PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2011-09-22 | — | — | US | disclosed |
| US-20110159433-A1 | PHOTOSENSITIVE COMPOSITION, PATTERN-FORMING METHOD USING THE COMPOSITION, AND RESIN USED IN THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-06-30 | — | — | US | disclosed |
| US-20110102528-A1 | COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND INKJET RECORDING METHOD | FUJIFILM CORPORATION (JP) | 2011-05-05 | — | — | US | disclosed |
| US-20110076625-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2011-03-31 | — | — | US | disclosed |
| US-20110020755-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2011-01-27 | — | — | US | disclosed |
| US-20110014570-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-01-20 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110102528-A1 | COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND INKJET RECORDING METHOD | ARFGAP1, FRG1, RHOA | MEN1 599/4885KMT2A 485/4885ALDH1A1 659/4885 |
| US-20110159433-A1 | PHOTOSENSITIVE COMPOSITION, PATTERN-FORMING METHOD USING THE COMPOSITION, AND RESIN USED IN THE COMPOSITION | SUN2, LCP1, PHYKPL | MEN1 2467/4885KMT2A 2523/4885ALDH1A1 2816/4885 |
| US-20110229832-A1 | PATTERN FORMING METHOD USING DEVELOPER CONTAINING ORGANIC SOLVENT AND RINSING SOLUTION FOR USE IN THE PATTERN FORMING METHOD | RER1, RARA, RARG | MEN1 2026/4885KMT2A 3306/4885ALDH1A1 1783/4885 |
| US-20240210824-A1 | CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SCO2, CBR1, OXGR1 | MEN1 2790/4885KMT2A 2023/4885ALDH1A1 492/4885 |
| US-20110318691-A1 | RESIST COMPOSITION FOR SEMICONDUCTOR, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | RIF1, MSI2, SLIRP | MEN1 737/4885KMT2A 774/4885ALDH1A1 4155/4885 |
| US-20240219830-A1 | SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | H1-0, HCN3, RER1 | MEN1 1558/4885KMT2A 1382/4885ALDH1A1 1499/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.