SCHEMBL11921068

SCHEMBL11921068

C=Cn1c2ccccc2c2cc([S+]3CCCC3)ccc21

nearest known ligand 0.33

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
▸ KDM4E B2RXH2 1/20 0.33
▸ MEN1 O00255 1/20 0.33
▸ ALDH1A1 P00352 1/20 0.33
▸ MAPT P10636 1/20 0.33
▸ HPGD P15428 1/20 0.33
▸ HTT P42858 1/20 0.33
▸ KMT2A Q03164 1/20 0.33
▸ HSD17B10 Q99714 1/20 0.33
▸ L3MBTL1 Q9Y468 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11921094 0.82 NPC1 (0.41) KDM4EMEN1ALDH1A1MAPTHPGD
SCHEMBL11921095 0.78 L3MBTL1 (0.55) KDM4EMEN1ALDH1A1MAPTHTT
SCHEMBL11921111 0.78 KMT2A (0.40) KDM4EMEN1ALDH1A1MAPTKMT2A
SCHEMBL11921067 0.77 MAPT (0.55) KDM4EMEN1ALDH1A1MAPTHPGD
SCHEMBL29352713 0.75 GPR3 (0.46) KDM4EMEN1ALDH1A1MAPTHPGD
SCHEMBL17224383 0.75 GPR3 (0.46) KDM4EMEN1ALDH1A1MAPTHPGD
SCHEMBL36244 0.75 GPR3 (0.46) KDM4EMEN1ALDH1A1MAPTHPGD
SCHEMBL11921069 0.74 POLB (0.58) KDM4EMEN1ALDH1A1MAPTHPGD
SCHEMBL11921098 0.74 MCHR2 (0.45) KDM4EMEN1ALDH1A1MAPTHPGD
SCHEMBL22906590 0.74 KDM4E (0.40) KDM4EMEN1ALDH1A1MAPTHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20160209747-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, RESIST-COATED MASK BLANK, METHOD FOR PRODUCING PHOTOMASK, PHOTOMASK, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE, EACH OF WHICH USES SAID ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2016-07-21 — — US disclosed
US-9316911-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2016-04-19 — — US disclosed
US-8940476-B2 Pattern forming method, actinic-ray-sensitive or radiation-sensitive resin composition, and resist film FUJIFILM CORPORATION (JP) 2015-01-27 — — US disclosed
US-8846293-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the same composition FUJIFILM CORPORATION (JP) 2014-09-30 — — US disclosed
US-8841060-B2 Actinic-ray-sensitive or radiation-sensitive resin composition, resist film and pattern forming method each using the composition, method for preparing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2014-09-23 — — US disclosed
US-20140234759-A1 ACTINIC RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-08-21 — — US disclosed
US-20130004741-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-03 — — US disclosed
US-20130004740-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD EACH USING THE COMPOSITION, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-01-03 — — US disclosed
US-20120264054-A1 PATTERN FORMING METHOD, ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-10-18 — — US disclosed
US-20120251948-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME COMPOSITION FUJIFILM CORPORATION (JP) 2012-10-04 — — US disclosed
US-20120207978-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME COMPOSITION FUJIFILM CORPORATION (JP) 2012-08-16 — — US disclosed
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