SCHEMBL11921067

SCHEMBL11921067

CCn1c2ccccc2c2cc([S+]3CCCC3)ccc21

nearest known ligand 0.55

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
▸ MAPT P10636 11/20 0.55
▸ KDM4E B2RXH2 6/20 0.55
▸ MEN1 O00255 4/20 0.55
▸ KMT2A Q03164 4/20 0.55
▸ HTT P42858 2/20 0.55
▸ MAPK1 P28482 2/20 0.55
▸ ALDH1A1 P00352 2/20 0.55
▸ HPGD P15428 1/20 0.55
▸ HBB P68871 1/20 0.55
▸ HSD17B10 Q99714 1/20 0.55
▸ TDP1 Q9NUW8 1/20 0.55
▸ LMNA P02545 5/20 0.49
▸ POLB P06746 2/20 0.48
▸ PKM P14618 1/20 0.48
▸ TP53 P04637 6/20 0.47
▸ NPSR1 Q6W5P4 1/20 0.47
▸ SRC P12931 2/20 0.46
▸ SMN1; SMN2 Q16637 2/20 0.45
▸ NPY5R Q15761 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11921090 0.82 ALDH1A1 (0.41) MAPTKDM4EMEN1KMT2AHTT
SCHEMBL11921083 0.82 RORA (0.41) MAPTKDM4EMEN1KMT2AHTT
SCHEMBL11921094 0.82 NPC1 (0.41) MAPTKDM4EMEN1KMT2AHTT
SCHEMBL11921115 0.80 KDM4E (0.54) MAPTKDM4EMEN1KMT2AHTT
SCHEMBL11921092 0.80 KDM4E (0.48) MAPTKDM4EMEN1KMT2AHTT
SCHEMBL11921091 0.79 TP53 (0.40) MAPTKDM4EMEN1KMT2AHTT
SCHEMBL11921105 0.79 KMT2A (0.34) MAPTKDM4EMEN1KMT2AHTT
SCHEMBL11921095 0.78 L3MBTL1 (0.55) MAPTKDM4EMEN1KMT2AHTT
SCHEMBL11921069 0.77 POLB (0.58) MAPTKDM4EMEN1KMT2AHTT
SCHEMBL11921068 0.77 KDM4E (0.33) MAPTKDM4EMEN1KMT2AHTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170097565-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-04-06 — — US disclosed
US-20170097565-A1 ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2017-04-06 — — US disclosed
US-9551928-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern therewith FUJIFILM CORPORATION (JP) 2017-01-24 — — US disclosed
US-9551931-B2 Method of forming pattern, actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, process for manufacturing electronic device and electronic device FUJIFILM CORPORATION (JP) 2017-01-24 — — US disclosed
US-9405197-B2 Pattern forming method, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-08-02 — — US disclosed
US-9316911-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2016-04-19 — — US disclosed
US-9250519-B2 Pattern forming method and actinic ray-sensitive or radiation-sensitive resin composition for use in the method FUJIFILM CORPORATION (JP) 2016-02-02 — — US disclosed
US-20160004157-A1 METHOD OF FORMING PATTERN, ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, PROCESS FOR MANUFACTURING ELECTRONIC DEVICE AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-07 — — US disclosed
US-20150331314-A1 PATTERN FORMING METHOD, COMPOUND USED THEREIN, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-11-19 — — US disclosed
US-9081277-B2 Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film therefrom and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-07-14 — — US disclosed
US-8841060-B2 Actinic-ray-sensitive or radiation-sensitive resin composition, resist film and pattern forming method each using the composition, method for preparing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2014-09-23 — — US disclosed
US-20140234759-A1 ACTINIC RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY- OR RADIATION-SENSITIVE FILM AND METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-08-21 — — US disclosed
US-20130004740-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND PATTERN FORMING METHOD EACH USING THE COMPOSITION, METHOD FOR PREPARING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2013-01-03 — — US disclosed
US-20130004741-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2013-01-03 — — US disclosed
US-20120273924-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-11-01 — — US disclosed
US-20120251948-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME COMPOSITION FUJIFILM CORPORATION (JP) 2012-10-04 — — US disclosed
US-20120237874-A1 Actinic-Ray- or Radiation-Sensitive Resin Composition, Compound and Method of Forming Pattern Using the Composition FUJIFILM CORPORATION (JP) 2012-09-20 — — US disclosed
US-20120207978-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME COMPOSITION FUJIFILM CORPORATION (JP) 2012-08-16 — — US disclosed
US-20100255418-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2010-10-07 — — US disclosed
US-7323286-B2 Photosensitive composition, compound used in the same, and patterning method using the same FUJIFILM CORPORATION (JP) 2008-01-29 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20100255418-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH RER1, NOC2L, RAD51 MAPT 1672/4885KDM4E 3848/4885MEN1 468/4885
US-20150331314-A1 PATTERN FORMING METHOD, COMPOUND USED THEREIN, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE RER1, CROCC, RFT1 MAPT 1525/4885KDM4E 3483/4885MEN1 1758/4885
US-20120237874-A1 Actinic-Ray- or Radiation-Sensitive Resin Composition, Compound and Method of Forming Pattern Using the Composition RER1, RXRA, XRN2 MAPT 959/4885KDM4E 3244/4885MEN1 2938/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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