SCHEMBL11921096

SCHEMBL11921096

O=C(c1ccccc1)n1c2ccccc2c2cc([S+]3CCCC3)ccc21

nearest known ligand 0.52

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
▸ P2RX4 Q99571 1/20 0.52
▸ LMNA P02545 2/20 0.51
▸ MAPT P10636 2/20 0.51
▸ HTT P42858 2/20 0.51
▸ SRC P12931 2/20 0.48
▸ MEN1 O00255 1/20 0.48
▸ ALDH1A1 P00352 1/20 0.48
▸ HPGD P15428 1/20 0.48
▸ KMT2A Q03164 1/20 0.48
▸ SMN1; SMN2 Q16637 1/20 0.48
▸ NPSR1 Q6W5P4 1/20 0.48
▸ AGTR1 P30556 4/20 0.44
▸ KDM4E B2RXH2 1/20 0.40
▸ POLB P06746 1/20 0.37
▸ IDO1 P14902 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL11921069 0.84 POLB (0.58) LMNAMAPTHTTMEN1ALDH1A1
SCHEMBL11921099 0.81 POLB (0.40) LMNAMAPTHTTMEN1ALDH1A1
SCHEMBL11921098 0.81 MCHR2 (0.45) LMNAMAPTHTTMEN1ALDH1A1
SCHEMBL11921095 0.79 L3MBTL1 (0.55) LMNAMAPTHTTMEN1ALDH1A1
SCHEMBL872109 0.78 P2RX4 (0.81) P2RX4LMNAMAPTHTTSRC
SCHEMBL12034344 0.75 P2RX4 (0.61) P2RX4LMNAMAPTHTTSRC
SCHEMBL7980221 0.73 SRC (0.87) P2RX4LMNAMAPTHTTSRC
SCHEMBL12034343 0.71 P2RX4 (0.56) P2RX4LMNAMAPTHTTSRC
SCHEMBL11921115 0.71 KDM4E (0.54) LMNAMAPTHTTMEN1ALDH1A1
SCHEMBL12034361 0.70 P2RX4 (0.55) P2RX4LMNAMAPTHTTSRC

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8846293-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the same composition FUJIFILM CORPORATION (JP) 2014-09-30 — — US disclosed
US-20120251948-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME COMPOSITION FUJIFILM CORPORATION (JP) 2012-10-04 — — US disclosed
US-20120207978-A1 ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME COMPOSITION FUJIFILM CORPORATION (JP) 2012-08-16 — — US disclosed
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