Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | GRIN2D | O15399 | 1/20 | 0.50 |
| ▸ | GRIN2A | Q12879 | 1/20 | 0.50 |
| ▸ | GRIN2B | Q13224 | 1/20 | 0.50 |
| ▸ | GRIN2C | Q14957 | 1/20 | 0.50 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.49 |
| ▸ | RARA | P10276 | 4/20 | 0.48 |
| ▸ | RARB | P10826 | 4/20 | 0.48 |
| ▸ | RARG | P13631 | 4/20 | 0.48 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.47 |
| ▸ | TSHR | P16473 | 1/20 | 0.47 |
| ▸ | AKR1C3 | P42330 | 7/20 | 0.46 |
| ▸ | AKR1C2 | P52895 | 7/20 | 0.46 |
| ▸ | AKR1C1 | Q04828 | 1/20 | 0.44 |
| ▸ | PTGS1 | P23219 | 1/20 | 0.44 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.44 |
| ▸ | USP2 | O75604 | 1/20 | 0.44 |
| ▸ | GAA | P10253 | 1/20 | 0.44 |
| ▸ | PKM | P14618 | 1/20 | 0.44 |
| ▸ | HPGD | P15428 | 1/20 | 0.44 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.44 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18288107 | 0.85 | KDM4E (0.53) | GRIN2DGRIN2AGRIN2BGRIN2CKDM4E | |
| SCHEMBL8081677 | 0.82 | KDM4E (0.55) | GRIN2DGRIN2AGRIN2BGRIN2CKDM4E | |
| SCHEMBL115710 | 0.82 | TSHR (0.56) | ALDH1A1TSHR | |
| SCHEMBL14549283 | 0.82 | TSHR (0.56) | ALDH1A1TSHR | |
| SCHEMBL10031628 | 0.82 | TSHR (0.56) | ALDH1A1TSHR | |
| SCHEMBL9167387 | 0.82 | ALDH1A1 (0.53) | ALDH1A1TSHRAKR1C3AKR1C2AKR1C1 | |
| SCHEMBL13399789 | 0.80 | DHODH (0.41) | GRIN2DGRIN2AGRIN2BGRIN2CALDH1A1 | |
| SCHEMBL10174229 | 0.79 | HDAC4 (0.56) | KDM4EALDH1A1PTGS1HSD17B10HPGD | |
| SCHEMBL12247344 | 0.79 | HDAC4 (0.56) | KDM4EALDH1A1PTGS1HSD17B10HPGD | |
| SCHEMBL20178615 | 0.79 | KDM4E (0.51) | GRIN2DGRIN2AGRIN2BGRIN2CKDM4E |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20200361920-A1 | ISOXAZOLE DERIVATIVES AS FXR AGONISTS AND METHODS OF USE THEREOF | ENANTA PHARMACEUTICALS, INC. | 2020-11-19 | — | — | US | disclosed |
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | TOKYO ELECTRON LIMITED (JP) | 2018-07-17 | — | — | US | disclosed |
| US-9971247-B2 | Pattern-forming method | OSAKA UNIVERSITY (JP) | 2018-05-15 | — | — | US | disclosed |
| US-20170052450-A1 | PATTERN-FORMING METHOD | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052448-A1 | RESIST-PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RESIST MATERIAL | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20170052449-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND | OSAKA UNIVERSITY (JP) | 2017-02-23 | — | — | US | disclosed |
| US-20160357103-A1 | PHOTOSENSITIZATION CHEMICAL-AMPLIFICATION TYPE RESIST MATERIAL, METHOD FOR FORMING PATTERN USING SAME, SEMICONDUCTOR DEVICE, MASK FOR LITHOGRAPHY, AND TEMPLATE FOR NANOIMPRINTING | TOKYO ELECTRON LIMITED (JP) | 2016-12-08 | — | — | US | disclosed |
| US-8940470-B2 | Photosensitive resin and process for producing microlens | NISSAN CHEMICAL INDUSTRIES, INC. (JP) | 2015-01-27 | — | — | US | disclosed |
| US-8895231-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-11-25 | — | — | US | disclosed |
| US-8822129-B2 | Pattern forming method, electron beam-sensitive or extreme ultraviolet-sensitive composition, resist film, manufacturing method of electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2014-09-02 | — | — | US | disclosed |
| US-8741554-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-03 | — | — | US | disclosed |
| US-8741546-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-06-03 | — | — | US | disclosed |
| US-20130209936-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-08-15 | — | — | US | disclosed |
| US-8426115-B2 | Patterning process and resist composition | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-04-23 | — | — | US | disclosed |
| US-20130084438-A1 | PATTERN FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET-SENSITIVE COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2013-04-04 | — | — | US | disclosed |
| US-20120058428-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-03-08 | — | — | US | disclosed |
| US-20110033803-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-02-10 | — | — | US | disclosed |
| US-20100304297-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-12-02 | — | — | US | disclosed |
| US-20100159392-A1 | PATTERNING PROCESS AND RESIST COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-24 | — | — | US | disclosed |
| US-20100096663-A1 | PHOTOSENSITIVE RESIN AND PROCESS FOR PRODUCING MICROLENS | NISSAN CHEMICAL INDUSTRIES, LTD. (JP) | 2010-04-22 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-10025187-B2 | Photosensitization chemical-amplification type resist material, method for forming pattern using same, semiconductor device, mask for lithography, and template for nanoimprinting | ASIC1, ASIC3, CLTA | GRIN2D 615/4885GRIN2A 96/4885GRIN2B 478/4885 |
| US-20200361920-A1 | ISOXAZOLE DERIVATIVES AS FXR AGONISTS AND METHODS OF USE THEREOF | SLC10A1, NR1H4, SLC10A2 | GRIN2D 1252/4885GRIN2A 1045/4885GRIN2B 861/4885 |
| US-20170052449-A1 | CHEMICALLY AMPLIFIED RESIST MATERIAL, PATTERN-FORMING METHOD, COMPOUND, AND PRODUCTION METHOD OF COMPOUND | RER1, POLR1A, FEM1B | GRIN2D 1346/4885GRIN2A 420/4885GRIN2B 840/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.