SCHEMBL12088362

SCHEMBL12088362

O=C(OCCN(CCOC(=O)C12CC3CC(CC(C3)C1)C2)c1ccccc1)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.56

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
▸ RECQL P46063 1/20 0.49
▸ NPSR1 Q6W5P4 1/20 0.48
▸ ALDH1A1 P00352 7/20 0.47
▸ SMN1; SMN2 Q16637 1/20 0.47
▸ CYP17A1 P05093 2/20 0.47
▸ CYP19A1 P11511 2/20 0.47
▸ KDM4E B2RXH2 1/20 0.47
▸ GAA P10253 2/20 0.46
▸ LMNA P02545 1/20 0.46
▸ CYP1A2 P05177 1/20 0.45
▸ CYP3A4 P08684 1/20 0.45
▸ CYP2D6 P10635 1/20 0.45
▸ CYP2C9 P11712 1/20 0.45
▸ CYP2C19 P33261 1/20 0.45
▸ KMT2A Q03164 1/20 0.43
▸ HPGD P15428 1/20 0.43

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12088271 0.92 NPSR1 (0.47) RECQLNPSR1ALDH1A1SMN1; SMN2CYP17A1
SCHEMBL12088243 0.86 NPSR1 (0.52) RECQLNPSR1ALDH1A1SMN1; SMN2CYP17A1
SCHEMBL28343037 0.77 RECQL (0.54) RECQLALDH1A1SMN1; SMN2CYP17A1CYP19A1
SCHEMBL20009307 0.77 NPSR1 (0.59) RECQLNPSR1ALDH1A1SMN1; SMN2CYP17A1
SCHEMBL8559344 0.75 ALDH1A1 (0.66) RECQLALDH1A1SMN1; SMN2CYP17A1CYP19A1
SCHEMBL12088120 0.75 RECQL (0.55) RECQLNPSR1ALDH1A1SMN1; SMN2CYP17A1
SCHEMBL1733254 0.75 CYP17A1 (0.73) RECQLALDH1A1SMN1; SMN2CYP17A1CYP19A1
SCHEMBL15216344 0.75 HSP90AA1 (0.40) RECQLNPSR1ALDH1A1CYP17A1CYP19A1
SCHEMBL12132675 0.75 ALDH1A1 (0.58) RECQLNPSR1ALDH1A1SMN1; SMN2CYP17A1
SCHEMBL11516130 0.74 NPSR1 (0.79) NPSR1ALDH1A1SMN1; SMN2CYP17A1CYP19A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 23 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11762287-B2 Onium salt compound, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-19 — — US disclosed
US-11762287-B2 Onium salt compound, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-09-19 — — US disclosed
US-20230205083-A1 SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-29 — — US disclosed
US-20230205083-A1 SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-29 — — US disclosed
US-20220127225-A1 ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-04-28 — — US disclosed
US-20210188770-A1 ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-06-24 — — US disclosed
US-20210179554-A1 ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-06-17 — — US disclosed
US-20210149301-A1 ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-05-20 — — US disclosed
US-20200249571-A1 RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-08-06 — — US disclosed
US-9519213-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-12-13 — — US disclosed
US-20140255843-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-11 — — US disclosed
US-20140255843-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-09-11 — — US disclosed
US-20130130183-A1 NEGATIVE PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-23 — — US disclosed
US-20130130183-A1 NEGATIVE PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-23 — — US disclosed
US-20130130177-A1 NEGATIVE PATTERN FORMING PROCESS AND NEGATIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-23 — — US disclosed
US-20130130177-A1 NEGATIVE PATTERN FORMING PROCESS AND NEGATIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-23 — — US disclosed
US-20130065183-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-14 — — US disclosed
US-20130065183-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-14 — — US disclosed
US-20120225386-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-09-06 — — US disclosed
US-20120225386-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-09-06 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20200249571-A1 RESIST COMPOSITION AND PATTERNING PROCESS PAG1, LIFR, GIGYF2 RECQL 2714/4885NPSR1 2733/4885ALDH1A1 1477/4885
US-20230205083-A1 SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS SLC6A9, SLC6A5, REN RECQL 4167/4885NPSR1 3223/4885ALDH1A1 3949/4885
US-20210179554-A1 ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SLC6A5, LIFR, SLC6A9 RECQL 3951/4885NPSR1 3697/4885ALDH1A1 4242/4885
US-20220127225-A1 ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS CACNA1F, SLC6A5, IDUA RECQL 2222/4885NPSR1 4281/4885ALDH1A1 3860/4885
US-11762287-B2 Onium salt compound, chemically amplified resist composition and patterning process IDUA, SLC6A5, SLC6A9 RECQL 3709/4885NPSR1 3275/4885ALDH1A1 4322/4885
US-20210188770-A1 ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SLC6A5, LIFR, SLC6A9 RECQL 3951/4885NPSR1 3697/4885ALDH1A1 4242/4885
US-20210149301-A1 ONIUM SALT COMPOUND, CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS IDUA, SLC6A5, SLC6A9 RECQL 3709/4885NPSR1 3275/4885ALDH1A1 4322/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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