SCHEMBL704126

SCHEMBL704126

CC(C)C(CO[SiH3])(c1ccccc1)C(C)C

nearest known ligand 0.36

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
CYP2D6 P10635 4/20 0.36
CYP1A2 P05177 1/20 0.36
CYP2C19 P33261 3/20 0.36
CYP3A4 P08684 2/20 0.36
MAPK1 P28482 1/20 0.35
ALDH1A1 P00352 3/20 0.35
KDM4E B2RXH2 2/20 0.35
HIF1A Q16665 1/20 0.34
HSD17B10 Q99714 1/20 0.34
TAAR1 Q96RJ0 1/20 0.33
ALOX15 P16050 1/20 0.33
RIPK1 Q13546 1/20 0.33
PABPC1 P11940 1/20 0.33
APOBEC3A P31941 1/20 0.33
APOBEC3G Q9HC16 1/20 0.33
KIF11 P52732 1/20 0.33
KCNN4 O15554 3/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1314544 0.83 KIF11 (0.37) CYP2D6CYP2C19CYP3A4MAPK1ALDH1A1
SCHEMBL702618 0.81 RIPK1 (0.35) CYP2D6CYP1A2CYP2C19MAPK1ALDH1A1
SCHEMBL1317834 0.80 GRIN1 (0.37) CYP2D6CYP1A2CYP2C19CYP3A4MAPK1
SCHEMBL706262 0.78 RIPK1 (0.33) CYP2D6CYP1A2CYP2C19MAPK1ALDH1A1
SCHEMBL9064254 0.72 CYP2D6 (0.39) CYP2D6CYP1A2CYP2C19MAPK1ALDH1A1
SCHEMBL705543 0.72 MAPK1 (0.44) CYP2D6CYP2C19CYP3A4MAPK1ALDH1A1
SCHEMBL109031 0.72 TAAR1 (0.52) CYP2C19CYP3A4MAPK1ALDH1A1HIF1A
SCHEMBL1314752 0.72 GRIN1 (0.41) CYP2D6CYP2C19CYP3A4MAPK1ALDH1A1
SCHEMBL238217 0.72 KIF11 (0.41) CYP1A2CYP2C19MAPK1ALDH1A1TAAR1
SCHEMBL703502 0.69 MAPK1 (0.41) CYP2C19CYP3A4MAPK1ALDH1A1HIF1A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2584005-B1 TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR PRODUCTION OF SAME, AND USES THEREOF TOSOH CORP (JP) 2018-02-21 EP disclosed
US-8907038-B2 Typical metal containing polysiloxane composition, process for its production, and its uses TOSOH CORPORATION (JP) 2014-12-09 US disclosed
EP-2584005-A1 TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR PRODUCTION OF SAME, AND USES THEREOF Tosoh Corporation (JP) 2013-04-24 EP disclosed
US-20130090447-A1 TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR ITS PRODUCTION, AND ITS USES TOSOH CORPORATION (JP) 2013-04-11 US disclosed
US-8163950-B2 Processes for the production of tri-organo-monoalkoxysilanes and process for the production of tri-organo-monochlorosilanes SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-04-24 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20110275849-A1 PROCESSES FOR THE PRODUCTION OF TRI-ORGANO-MONOALKOXYSILANES AND PROCESS FOR THE PRODUCTION OF TRI-ORGANO-MONOCHLOROSILANES BANNOU TADASHI 2011-11-10 US disclosed
US-8008521-B2 Processes for the production of tri-organo-monoalkoxysilanes and process for the production of tri-organo-monochlorosilanes HOKKO CHEMICAL INDUSTRY CO., LTD. (JP) 2011-08-30 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20090082585-A1 PROCESSES FOR THE PRODUCTION OF TRI-ORGANO-MONOALKOXYSILANES AND PROCESS FOR THE PRODUCTION OF TRI-ORGANO-MONOCHLOROSILANES BANNOU TADASHI 2009-03-26 US disclosed
US-7459577-B2 Reacting a chlorosilane with grignard reagent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-02 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-20050070730-A1 Production processes for triorganomonoalkoxysilanes and triorganomonochlorosilanes SHIN-ETSU CHEMICAL CO., LTD. (JP) 2005-03-31 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110275849-A1 PROCESSES FOR THE PRODUCTION OF TRI-ORGANO-MONOALKOXYSILANES AND PROCESS FOR THE PRODUCTION OF TRI-ORGANO-MONOCHLOROSILANES MLX, HAX1, RPS4X CYP2D6 2984/4885CYP1A2 198/4885CYP2C19 1865/4885
US-20090082585-A1 PROCESSES FOR THE PRODUCTION OF TRI-ORGANO-MONOALKOXYSILANES AND PROCESS FOR THE PRODUCTION OF TRI-ORGANO-MONOCHLOROSILANES MLX, HAX1, RPS4X CYP2D6 2984/4885CYP1A2 198/4885CYP2C19 1865/4885
US-20050070730-A1 Production processes for triorganomonoalkoxysilanes and triorganomonochlorosilanes MLX, HAX1, GRIA3 CYP2D6 3008/4885CYP1A2 255/4885CYP2C19 2201/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.